Sonstiges, Englisch, 1100 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1100 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-908453-69-7
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.
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Quality Aspects for the Production of SiC Bulk CrystalsAn Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport MethodGrowth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials StudiesGrowth and Characterization of High-Quality 6H-SiC (0115) Bulk CrystalsGrowth Induced Stacking Fault Formation in 4H-SiCHydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport MethodEffect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon SolutionGrowth and Electrical Characterization of 4H-SiC EpilayersGrowth of SiC from a Liquid Phase at Low TemperatureThick Epilayer for Power Devices4H-SiC Epitaxial Layers Grown on On-Axis Si-Face SubstrateA Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth ProcessAnalysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D ModellingBoron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC LayersComparison of Chlorine Based In Situ Etching of 4H SiC SubstratesCVD of 6H-SiC on Non-Basal Quasi Polar FacesDeveloping an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal GradientEffect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial GrowthEpitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides RouteGrowth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers High Quality Uniform SiC Epitaxy for Power Device ApplicationsHigh SiC Growth Rate Obtained by Vapour-Liquid-Solid MechanismHomoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial DepositionIn Situ Measurement of Nitrogen during Growth of 4H-SiC by CVDLow Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl AdditiveOptimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical CharacterizationProgress in Cold-Wall Epitaxy for 4H-SiC High-Power DevicesScaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy SystemSelective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial MethodSiC Epitaxial Layers Grown by Sublimation Method and their Electrical PropertiesVery High Growth Rate Epitaxy Processes with Chlorine AdditionSiC Heteropolytype Structures Grown by Sublimation EpitaxyCarbonization of Porous Silicon for 3C-SiC GrowthCarbonization Study of Different Silicon Orientations Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC SubstratesHeavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator ApplicationsHetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD How to Grow 3C-SiC Single Domain on a-SiC(0001) by Vapor-Liquid-Solid MechanismIncreased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth AdditiveInitial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiCMechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal BasisMorphology and Stress Control in UHVCVD of 3C-SiC(100) on Si Trends in Dopant Incorporation for 3C-SiC Films on Silicon Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray DiffractionAbsence of Dislocation Motion in 3C-SiC pn Diodes under Forward BiasAn X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC WafersBehavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon CarbideComparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4? Towards (11-20)Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen DopingDefect Etching of Non-Polar and Semi-Polar Faces in SiCDislocation in 4H n+ SiC Substrates and their Relationship with Epilayer DefectsDistinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence ImagingEpitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and PhotoluminescenceImpact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal GrowthInfluence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single CrystalsIn Situ X-Ray Measurements of Defect Generation during PVT Growth of SiCMigration of Dislocations in 4H-SiC Epilayers during the Ion Implantation ProcessNondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV ExcitationPartial Dislocations under Forward Bias in SiCProperties of Thermally Etched 4H-SiC by Chlorine-Oxygen SystemThe DI Defect is Associated with a Stacking Fault?Trends in Commercially Available SiC SubstratesWhole-Wafer Mapping of Dislocations in 4H-SiC EpitaxyXRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC WafersXRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and TheoryPhotoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiCA Study of the DII Defect after Electron Irradiation and Annealing of 4H SiCCarrier Lifetime Analysis by Microwave Photoconductive Decay (?-PCD) for 4H SiC Epitaxial WafersContactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial LayersDeep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient SpectroscopyDependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiCDetermination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche PhotodiodesElectrical and Structural Properties of Al-Implanted and Annealed 4H-SiCElectrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or HeliumElectric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiCEPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different TechnologiesExcess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay MethodFTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMSImpurity Conduction in Silicon CarbideInfluence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiCInvestigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC DiodesMechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV ElectronsMicro-Photoluminescence Mapping of Defect Structures in SiC WafersMicro-Raman Investigation of Defects in a 4H-SiC HomoepilayerNitrogen Donor Aggregation in 4H-SiC: g-Tensor CalculationsNonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature RangeOptical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct SynthesisOptical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLSPhotoluminescence of 6H-SiC NanostructuresProperties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping TechniquesRaman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC SubstratesReverse Biased Electrochemical Etching of SiC-SBDSimultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance SpectroscopyTemperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn StructureThe Premature Breakdown in 6H-SiC p-n JunctionTheory of the Stark Effect on the Donor Levels in 4H Silicon CarbidePoint Defects and their Aggregation in Silicon CarbideA Theoretical Study on Aluminium-Related Defects in SiCDeep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiCElectron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation AnalysisInfluence Of Growth Conditions on Irradiation Induced Defects in 4H-SiCIntrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier CompensationNew Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiCPoint Defects in 4H SiC Grown by Halide Chemical Vapor DepositionSIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based ?-spot XPS and LEEMSodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface TrapsAb Initio Study of Clean and Hydrogen-Saturated Unreconstructed SiC{0001} SurfacesAn Approach to Model Temperature Effects of Interface Traps in 4H-SiCConductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiCElectronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid MechanismEllipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS DevicesEtching of 4? and 8? 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD ReactorFormation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced OxidationGeneration of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics SimulationInitial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron SpectroscopyNanowire Reconstruction on the 4H-SiC(1102) SurfaceStructure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current TechniqueThe Mechanism of Interface State Passivation by NOTwo Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force MicroscopyXPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon OxidationControl of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and AluminumPost-Implantation Annealing of SiC: Relevance of the Heating RateAchieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped AnnealingAnalysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing ProcessComparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiCElectrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC SubstrateEncapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon FilmHigh Temperature Implantation of Aluminum in 4H Silicon CarbideIsochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiCModification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode CharacteristicsPeculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance StudyReduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion ImplantationSelenium and Tellurium Double Donors in SiCUse of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles Trap Assisted Gas Sensing Mechanism in MISiC Capacitors4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3A Comparative Study of Surface Passivation on SiC BJTs with High Current GainAcceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC WafersCharacterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High DoseElectrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNyFabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion ImplantationGrowth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K ApplicationInterface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O OxidationModification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor AnnealingOptimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel DevicesStudy of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide DevicesTime-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiCTrap Assisted Conduction in High K Dielectric Capacitors on 4H-SiCX-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiCA Case for High Temperature, High Voltage SiC Bipolar DevicesAb Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} InterfaceDevelopment of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiCElectronic Structure of Graphite/6H-SiC InterfacesEvaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle ApplicationInterface Reactions and Electrical Properties of Ta/4H-SiC Contacts Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes Low Specific Contact Resistance to 3C-SiC Grown on (100) Si SubstratesNanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition Plasma Etching for Backside Wafer Thinning of SiCSloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal EtchingThe Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area ContactsNano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred EtchingHigh Throughput SiC Wafer Polishing with Good Surface MorphologyPolishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates4H-SiC Power BJTs with High Current Gain and Low On-Resistance9 kV 4H-SiC IGBTs with 88 mO?cm2 of R diff, onA Comparison of High Temperature Performance of SiC DMOSFETs and JFETsCritical Reliability Issues for SiC Power MOSFETs Operated at High Temperature Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiCFabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETsHigh Frequency 4H-SiC MOSFETsHigh Temperature Characterisation of 4H-SiC VJFETImprovement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis SubstratesInvestigation of Drain Current Saturation in 4H-SiC MOSFETsLateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF StructureLow Output Capacitance 1500V 4H-SiC MOSFETs with 8 mO?cm2 Specific On-ResistanceNumerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping ConcentrationsRealization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-BodySiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 ?CSiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface TrapsSimulation Study of High-k Materials for SiC Trench MOSFETsTemperature Stability of Heteropolytypic 6H/3C FETsTime Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETsReliability of SiC Power Devices Against Cosmic Radiation-Induced Failure600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings TerminationBreakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge TerminationComparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and DiamondFLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination ExtensionImprovement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature AnnealingSimulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier DiodesBipolar SiC-Diodes ? Challenges Arising from Physical and Technological AspectsProgress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications1.2 kV Pin Diodes with SiCrystal EpiwaferBehaviour of 4H-SiC pin Diodes Studied by Numerical Device SimulationCoupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin DiodesDegradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold IonsEffects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC DiodesElectrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETsFabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBASMicrowave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in VacuumPotential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers4H-SiC High Temperature Spectrometers4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface EffectFabrication and Test of 3C-SiC Electrostatic ResonatorsStudy of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication RegionsSurface Functionalization of SiC for Biosensor ApplicationsThe Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al ImplantationSiC-Based Power Converters for High Temperature ApplicationsAnalysis of Novel Packaging Techniques for High Power Electronics in SiCComparison of Bipolar and Unipolar SiC Switching Devices for Very High Power ApplicationsDemonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge InverterFabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETsHigh Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky DiodesHigh Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETsImproved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET Microwave p-i-n Diodes and Switches Based on 4H-SiCNew Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication ProcessOBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC DiodesProposed Architecture for SiC Switches and Diodes in a Switch Mode Power SupplyAdvances in AlGaN/GaN/SiC Microwave DevicesA Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaNEmploying Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC SubstratesHot Electron Induced Current Collapse in AlGaN/GaN HEMTsImpact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar TransistorInfluence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
