Graphene for Post-Moore Silicon Optoelectronics

1. Auflage 2023
ISBN: 978-3-527-35181-7
Verlag: WILEY-VCH

Buch, Englisch, 192 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 539 g

Graphene for Post-Moore Silicon Optoelectronics

Provides timely coverage of an important research area that is highly relevant to advanced detection and control technology

Projecting device performance beyond the scaling limits of Moore’s law requires technologies based on novel materials and device architecture. Due to its excellent electronic, thermal, and optical properties, graphene has emerged as a scalable, low-cost material with enormous integration possibilities for numerous optoelectronic applications. Graphene for Post-Moore Silicon Optoelectronics presents an up-to-date overview of the fundamentals, applications, challenges, and opportunities of integrating graphene and other 2D materials with silicon (Si) technologies.

With an emphasis on graphene-silicon (Gr/Si) integrated devices in optoelectronics, this valuable resource also addresses emerging applications such as optoelectronic synaptic devices, optical modulators, and infrared image sensors. The book opens with an introduction to graphene for silicon optoelectronics, followed by chapters describing the growth, transfer, and physics of graphene/silicon junctions. Subsequent chapters each focus on a particular Gr/Si application, including high-performance photodetectors, solar energy harvesting devices, and hybrid waveguide devices. The book concludes by offering perspectives on the future challenges and prospects of Gr/Si optoelectronics, including the emergence of wafer-scale systems and neuromorphic optoelectronics. - Illustrates the benefits of graphene-based electronics and hybrid device architectures that incorporate existing Si technology
- Covers all essential aspects of Gr/Si devices, including material synthesis, device fabrication, system integration, and related physics
- Summarizes current progress and future challenges of wafer-scale 2D-Si integrated optoelectronic devices

- Explores a wide range of Gr/Si devices, such as synaptic phototransistors, hybrid waveguide modulators, and graphene thermopile image sensors

Graphene for Post-Moore Silicon Optoelectronics is essential reading for materials scientists, electronics engineers, and chemists in both academia and industry working with the next generation of Gr/Si devices.

Autoren/Hrsg.

Xu, Yang

Shehzad, Khurram

Bodepudi, Srikrishna Chanakya

Imran, Ali

Yu, Bin

Fachgebiete

• Naturwissenschaften Chemie Physikalische Chemie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

1 INTRODUCTION OF GRAPHENE FOR SILICON OPTOELECTRONICS
1.1 Introduction
1.2 Optical Absorption
1.3 Emergence of Graphene in Silicon Optoelectronics
1.4 Photodetection in Graphene
1.5 Outlook
 
2 GROWTH AND TRANSFER OF GRAPHENE FOR SILICON OPTOELECTRONICS
2.1 Introduction
2.2 Growth of Graphene
2.3 Dielectric deposition on Graphene
2.4 Graphene Transfer Methods
2.5 Fabrication of Solution Processed Graphene and Integration with Silicon
2.6 Graphene Transfer on Flexible Silicon
2.7 Graphene integration with Silicon CMOS Process
2.8 Challenges and Future Perspectives
 
3 PHYSICS OF GRAPHENE/SILICON JUNCTIONS
3.1 Introduction
3.2 Physics of Schottky Junction
3.3 Measurement of Schottky Barrier Height
3.4 2D Materials and Schottky Junctions
3.5 Challenges and Future Perspectives
 
4 GRAPHENE/SILICON JUNCTION FOR HIGH PERFORMANCE PHOTODETECTORS
4.1 Introduction
4.2 Ultraviolet Photodetectors
4.3 Visible to Near Infrared Photodetectors
4.4 Broadband Photodetectors
4.5 Hybrid Graphene/Silicon Photodetectors
4.6 Challenges and Perspectives
 
5 GRAPHENE/SILICON SOLAR ENERGY HARVESTING DEVICES
5.1 Introduction
5.2 Photovoltaic Mechanism and Performance Parameters in Graphene/Silicon Solar Cells
5.3 Theoretical Efficiency Limits of Graphene/Silicon Solar Cells
5.4 Optimization of Graphene/Silicon Solar Cells
5.5 Challenges and Perspectives
 
6 GRAPHENE SILICON INTEGRATED WAVEGUIDE DEVICES
6.1 Introduction
6.2 Hybrid Waveguide Photodetector
6.3 Hybrid Waveguide Modulator
6.4 Challenges and Perspectives
 
7 GRAPHENE FOR SILICON IMAGE SENSOR
7.1 Introduction
7.2 Quantum Dot based Infrared Graphene Image Sensor
7.3 Graphene Thermopile Image Sensor
7.4 Graphene THz Image Sensor
7.5 Curved Image Sensor Array
7.6 Neural Network Image Sensors
7.7 Graphene Charge Coupled Device Image Sensor
7.8 Graphene Based Position Sensitive Detector
7.9 Challenges and Perspectives
 
8 SYSTEM INTEGRATION WITH GRAPHENE FOR SILICON OPTOELECTRONICS
8.1 Introduction
8.2 Graphene Silicon Flip Chips
8.3 Graphene Silicon Heterogeneous Integration
8.4 Graphene Silicon Monolithic Integration for Optoelectronics Applications
8.5 Challenges and Prospective
 
9 GRAPHENE FOR SILICON OPTOELECTRONIC SYNAPTIC DEVICES
9.1 Introduction
9.2 Silicon Neurons
9.3 Synaptic devices
9.4 Silicon Optoelectronic Synaptic Devices
9.5 ORAM Synaptic Devices
9.6 Graphene for Silicon Synaptic Devices
9.7 Synaptic Phototransistor
9.8 Mechano-photonic Synaptic Transistor
9.9 Challenges and Prospects
 
10 CHALLENGES AND PROSPECTS OF GRAPHENE/SILICON OPTOELECTRONICS
10.1 Emergence of Wafer Scale Systems
10.2 Wafer Scale Synthesis and Foundry Process
10.3 Scalable Transfer and Quality Metrics
10.4 Scaling Laws and Hot Electron Effects
10.5 Optical Modulators
10.6 Infrared Photodetectors
10.7 Neuromorphic Optoelectronics
 

Über Autor(innen)

Prof. Yang Xu is a Fellow of the Institute of Physics (FInstP, IOP Fellow), IEEE NTC Distinguished Lecturer and IEEE Senior Member of the Electron Devices Society. He received his B.S. degree in Institute of Microelectronics at Department of EE from Tsinghua University, M.S. and Ph.D. degrees in ECE from the University of Illinois Urbana-Champaign (UIUC), USA. He is now a full professor at the School of Micro-Nano Electronics, Zhejiang University, China. He was also a visiting by-Fellow of Churchill College at the University of Cambridge, UK, and a visiting professor at the University of California Los Angles (UCLA). He has published more than 120 papers including Nature Nanotechnology, Nature Electronics, Nature Photonics, Chemical Reviews, Advanced Materials, Chemical Society Reviews, Nature Communications, Nano Letters, ACS Nano, IEEE-EDL, IEEE-TED, IEEE-TNANO, and IEDM, etc. He holds over 30 granted patents and gave more than 50 conference talks. He is also served as Associate Editor of IEEE Nanotechnology Magazine, Microelectronics Journal, Micro & Nano Letters, and IET Circuits, Devices & Systems, Advisory Panel Member of IOP Nanotechnology, and was TPC committee members of IEEE-EDTM, IEEE-IPFA, and IEEE-EDAPS conferences. His research interests include emerging 2D/3D integrated optoelectronic devices for Internet-of-Things and Post-Moore Ubiquitous Electronics.
 
Khurram Shehzad obtained his Ph.D. in Materials Science and Engineering in 2011 from Beijing University of Chemical Technology. From 2011 to 2013, he was a postdoctoral fellow at the center for nano and micromechanics, Tsinghua University. He joined Zhejiang University as a postdoctoral fellow in 2014. He served as a Research Associate Professor at the School of Micro-Nano Electronics, Zhejiang University, China, and as an associated faculty at Zhejiang University?Hangzhou Global Scientific and Technological Innovation Center. His current research interests include 2D materials/Si hybrids for applications in energy, healthcare, and electronics.
 
Srikrishna Chanakya Bodepudi is a Distinguished Research Fellow at the School of Micro-Nano Electronics, Zhejiang University, China (2018?now). He received a Ph.D. degree from University of Alberta, Canada (2016). In 2017?2018, he worked as a research associate and a course instructor in the Department of Electrical Engineering, University of Alberta. He is the recipient of the NSFC Young Scientists Fund. His current research interests include bulk 2D materials for optoelectronic and memory circuits for applications in energy, healthcare, and data storage.
 
Dr. Ali Imran obtained M.S. from Center of Excellence in Solid State Physics, University of the Punjab Lahore and Ph.D. from School of Optics and Photonics, Beijing Institute of Technology. He is the recipient of Distinguished International Student award from Beijing Institute of technology. He worked as the postdoctoral fellow at State Key Lab of Micro and Mesoscopic Physics, School of Physics, Peking University. Currently, he is perusing his research at School of Micro and Nano Electronics, Zhejiang University.
 
Bin Yu received his Ph.D. degree in Electrical Engineering from the University of California at Berkeley. His current research interests include nanoelectronics, sensors, and neuromorphic devices. Specific interests include post-Si devices, carbon-based electronics, neuromorphic vision, image sensors, and other emerging devices. He has authored or co-authored 8 book/book chapters and over 280 research papers and was the speaker of more than 150 invited talks to international conferences, universities, professional societies, and industries around the globe. Dr. Yu served on the invited panels and advisory/organizing/technical program committees of many international conferences. He was/is Editor of IEEE Electron Devices Letters, Associated Editor of IEEE Transactions on Nanotechnology, Editor of Nano-Micro Letters, and Guest Editor of IEEE Transactions on Electron Devices and IEEE Transactions on Nanotechnology. He is a Fellow of IEEE, a Fellow of the National Academy of Inventors, and the recipient of IEEE Distinguished Lectureship and IBM Faculty Award.