High Power Insulated-gate Bipolar Transistor (IGBT) Drivers

Design and Applications
Erscheinungsjahr 2026
ISBN: 978-0-443-52655-8
Verlag: Elsevier - Health Sciences Division

Buch, Englisch, 500 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 450 g

High Power Insulated-gate Bipolar Transistor (IGBT) Drivers: Design and Applications presents the latest developments in IGBT driver technology, drawing upon the authors’ extensive experience and authority within the field. The book fills the gap in the market for a reference resource specifically addressing IGBT driver development and implementation. The book combines current theory with practical, real-world case studies, to enhance readers’ understanding of IGBT driver technology. Detailed sections in the book on the principles of circuits and control will have particular appeal for academic readers. Engineers will find the systematic presentation of driver circuit reliability and testing methods especially useful. The book enables readers to design a high-reliability IGBT driver capable of managing high-voltage and high-power applications and able to resist strong electromagnetic interference. Provides readers with robust technical support for the engineering application of high-voltage and high-power IGBT drivers. Driver implementation and test methodologies are described in detail, together with a wide range of application scenarios.

High Power Insulated-gate Bipolar Transistor (IGBT) Drivers is a comprehensive theoretical and practical reference resource for IGBT industry professionals and researchers.

Autoren/Hrsg.

Zhiyuan, He

Jinkun, Ke

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

1. Overview
2. Electrical characteristics of IGBT modules ·
3. Drive design
4. IGBT multi-device drive control technology
5. Drive reliability design
6. Drive test and test
7. High-power IGBT driver application cases

Über Autor(innen)

Jinkun, Ke
Ke Jinkun, professor-level senior engineer, works at China Electric Power Research Institute Co., Ltd.; he has been engaged in the research and development of high-voltage power semiconductor control chip technology, real-time control technology, and DC transmission technology for many years. He is the chairman of the global technical group of IPC-9207 "IGBT Product Application Reliability Test Method". He has led the development of 30 kinds of central control boards, power boards, and drivers suitable for flexible DC, high-voltage circuit breakers, and CLCC, which have been successfully applied to dozens of major projects such as State Grid Xiamen Flex, Zhoushan Flex, Chongqing-Hubei DC Networking, Zhangbei DC Power Grid, South Grid Wudongde Multi-terminal Flex, and Three Gorges Rudong Offshore Wind Power

Zhiyuan, He
Dr He Zhiyuan is a professor-level senior engineer; he is currently the Vice Dean of China Electric Power Research Institute Co., Ltd., the director of the National Key Laboratory of "Advanced Transmission Technology", a senior member of the Chinese Institute of Electrical Engineering, a member of the China National Committee of CIGRE and the Standard Committee of Power Electronic Devices for Power Systems of the China Electricity Federation