Abrahams / Pridham / Hiller Semiconductor Circuits

Theory, Design and Experiment
1. Auflage 2013
ISBN: 978-1-4831-3700-1
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 320 Seiten, Web PDF

Semiconductor Circuits: Theory, Design and Experiment focuses on the design and modification of circuits involving transistors and related semiconductor devices. This book is divided into three parts. The four chapters of Part I are concerned with the physical theory of semiconductors; production of pn junctions; and characteristics and equivalent circuits of transistors. The treatment of physical theory is briefly mentioned. Part II forms the major portion of this book and is made up of seven chapters. These chapters have been written at a practical level, including a number of complete circuit designs. Chapters 10 and 11, in particular, deal with the aspects of semiconductors. Several laboratory demonstrations and experiments with semiconductors are provided in Part III. This publication is written as an undergraduate and technical college textbook that helps electrical engineering students in choosing the right component and device for a particular application.

Autoren/Hrsg.

Abrahams, J. R.

Pridham, G. J.

Hiller, N.

Inhaltsverzeichnis

1;Front Cover;1
2;Semiconductor Circuits: Theory, Design and Experiment;4
3;Copyright Page;5
4;Table of Contents;6
5;Introduction;7
6;Acknowledgements;9
7;PART I: Theory of Semiconductors;10
7.1;CHAPTER 1. Basic Physical Theory;12
7.1.1;1.1. The Atom;12
7.1.2;1.2. Electron Orbits;13
7.1.3;1.3· Types of Elements;15
7.1.4;1.4. Atomic Binding;16
7.1.5;1.5. Electron Energy Levels;18
7.1.6;1.6. Fermi Level;22
7.1.7;1.7. Energy Levels in Conductors;23
7.1.8;1.8. Hall Effect in Conductors;25
7.1.9;1.9. Contact Potential between Metals;26
7.1.10;1.10. Energy Levels in Insulators;26
7.1.11;1.11. Energy Levels in Intrinsic Semiconductors;27
7.1.12;1.12. Energy Levels in Extrinsic Semiconductors;30
7.1.13;Questions for Chapter 1;34
7.2;CHAPTER 2. Physics of Semiconductor Devices;35
7.2.1;2.1. The pn Junction;35
7.2.2;2.2. pn Junction with Zero Bias;37
7.2.3;2.3. pn Junction with Forward Bias;38
7.2.4;2.4. pn Junction with Reverse Bias;39
7.2.5;2.5. The Zener Diode;39
7.2.6;2.6. The Tunnel (Esaki) Diode;40
7.2.7;2.7. Metal-Semiconductor Diodes;43
7.2.8;2.8. The pnp Transistor;45
7.2.9;2.9. The npn Transistor;49
7.2.10;Questions for Chapter 2;49
7.3;CHAPTER 3. Construction and Characteristics of Transistors;51
7.3.1;3.1. Introduction;51
7.3.2;3.2. Preparation of Crystal;51
7.3.3;3.3. Alloying;53
7.3.4;3.4. Grown Junctions;54
7.3.5;3.5. Diffusion;56
7.3.6;3.6. Epitaxial and Planar Techniques;58
7.3.7;3.7. Encapsulation;60
7.3.8;3.8. D.C. Characteristics;61
7.3.9;3.9. Leakage Currents;64
7.3.10;3.10. Current Gain;65
7.3.11;3.11. Power Dissipation;67
7.3.12;Questions for Chapter 3;69
7.4;CHAPTER 4. Equivalent Circuits;70
7.4.1;4.1. Common Base, Low Frequency, Equivalent T Circuit;70
7.4.2;4.2. Common Base, High Frequency, Equivalent T Circuit;73
7.4.3;4.3. Common Emitter, Low Frequency, Equivalent T Circuit;75
7.4.4;4.4. Common Emitter, Hybrid p Equivalent Circuit;77
7.4.5;4.5. Common Collector Equivalent T Circuit;80
7.4.6;4.6. h Parameters;80
7.4.7;4.7. Relation between h and T Parameters;84
7.4.8;4.8. Z Parameters;86
7.4.9;4.9. Relation between Z and T Parameters;87
7.4.10;4.10. Y Parameters;87
7.4.11;4.11. Relation between Y and T Parameters;88
7.4.12;Questions for Chapter 4;90
8;PART II: Design of Circuits;92
8.1;CHAPTER 5. Rectifiers and Stabilizers;94
8.1.1;5.1. Semiconductor Diodes;94
8.1.2;5.2. Half-wave Rectifier;97
8.1.3;5.3. Full-wave Rectifier;99
8.1.4;5.4. Voltage Multipliers;101
8.1.5;5.5. Diode Voltmeters;103
8.1.6;5.6. Diode Stabilizer;104
8.1.7;5.7. Transistor-Diode Stabilizers;108
8.1.8;5.8. Stabilizer Design Example;112
8.1.9;5.9. The Silicon Controlled Rectifier;115
8.1.10;5.10. Applications of the Thyristor;118
8.1.11;Questions for Chapter 5;121
8.2;CHAPTER 6. Voltage Amplifiers;124
8.2.1;6.1. Basic Amplifier Circuits;124
8.2.2;6.2. D.C. Biasing and Stabilization;124
8.2.3;6.3. Feedback Resistor Stabilization;127
8.2.4;6.4. Base Resistor and Emitter Bias Stabilization;129
8.2.5;6.5. Potential Divider and Emitter Bias Stabilization;130
8.2.6;6.6. Analysis and Design of Circuits Using Load Lines;132
8.2.7;6.7. Analysis of Circuits Using the T Equivalent Circuit;137
8.2.8;6.8. Comparison of Transistor Circuits;143
8.2.9;6.9. R.C. Coupling of Transistor Stages;144
8.2.10;6.10. Drift Transistor;149
8.2.11;6.11. R.F. Amplifiers;150
8.2.12;6.12. D.C. Amplifiers;154
8.2.13;Questions for Chapter 6;158
8.3;CHAPTER 7. Power Amplifiers;161
8.3.1;7.1. Classification of Power Amplifiers;161
8.3.2;7.2. Class A Power Amplifier;162
8.3.3;7.3. Common Emitter Push-pull Amplifier;167
8.3.4;7.4. Design Example—Transformer-coupled Push-pull Amplifier;171
8.3.5;7.5. Transformer-less Audio Amplifiers;175
8.3.6;7.6. Servo System Amplifiers;178
8.3.7;7.7. Class C High Frequency Amplifiers;180
8.3.8;Questions for Chapter 7;183
8.4;CHAPTER 8. Oscillator Circuits;185
8.4.1;8.1. L.C. Feedback Oscillator;185
8.4.2;8.2. R.C. Oscillators;191
8.4.3;8.3. Negative Resistance Oscillators;196
8.4.4;8.4. Crystal Controlled Transistor Oscillators;200
8.4.5;8.5. Inverters and Converters;203
8.4.6;Questions for Chapter 8;208
8.5;CHAPTER 9. Pulse and Computing Circuits;212
8.5.1;9.1. Introduction;212
8.5.2;9.2. Astable Multivibrator;213
8.5.3;9.3. Monostable Multivibrator;215
8.5.4;9.4. Bistable Multivibrator;217
8.5.5;9.5. Binary and Decade Counters;219
8.5.6;9.6. Ring Counter with pnpn Transistors;222
8.5.7;9.7. Digital Computing Operations;224
8.5.8;9.8. Diode Gate Circuits;226
8.5.9;9.9. Transistor-Resistor Logic;229
8.5.10;9.10. All-transistor Switching;230
8.5.11;Questions for Chapter 9;232
8.6;CHAPTER 10. Photo-electric Applications;234
8.6.1;10.1. Types of Semiconductor Photocells;234
8.6.2;10.2. Photo-conductive Cells and Their Applications;235
8.6.3;10.3. Photo-diode Circuit;236
8.6.4;10.4. The Photo-transistor;238
8.6.5;10.5. Construction of Silicon Solar Cells;241
8.6.6;10.6. Electrical Properties of Solar Cells;243
8.6.7;Questions for Chapter 10;246
8.7;CHAPTER 11. Special Applications;247
8.7.1;11.1. Amplitude Modulation;247
8.7.2;11.2. Amplitude Demodulation;252
8.7.3;11.3. Frequency Modulation;256
8.7.4;11.4. Electronic Switching Circuits;262
8.7.5;11.5. Ferrite Core Driving Circuits;266
8.7.6;11.6. D.C. Motor Control;269
8.7.7;Questions for Chapter 11;273
9;PART III: Experiments with Semiconductors;276
9.1;CHAPTER 12. Laboratory Demonstrations: Semiconductor Characteristics and Circuits;278
9.1.1;12.1. Comparison of Metal and Semiconductor Diodes;278
9.1.2;12.2. Transistor Characteristics;279
9.1.3;12.3. Characteristic of a Silicon Controlled Rectifier;283
9.1.4;12.4. Phase Control of a Silicon Controlled Rectifier;285
9.1.5;12.5. Characteristic of a Zener Diode;285
9.1.6;12.6. Stabilizing Action of a Zener Diode;287
9.1.7;12.7. Demonstration of Hall Effect;288
9.2;CHAPTER 13. Experiments with Semiconductor Circuits;290
9.2.1;13.1. Variation of Current Gain with Frequency and Emitter Current;290
9.2.2;13.2. Common Emitter Amplifier;293
9.2.3;13.3. The Emitter Follower;294
9.2.4;13.4. The Tuned Collector Oscillator;295
9.2.5;13.5. Transistor R.C. Oscillators;296
9.2.6;13.6. Multivibrator Circuits;297
9.2.7;13.7. A Semiconductor Modulator;299
9.3;CHAPTER 14. Design Experiments;301
9.3.1;14.1. Single-stage Audio Amplifier;301
9.3.2;14.2. Simple D.C. Stabilizer;302
9.3.3;14.3. Power Stabilizer Circuits;302
9.3.4;14.4. Frequency Modulation, with a Varactor;303
9.3.5;14.5. Semiconductor Gate Circuits;304
9.3.6;14.6. Push-pull Driver Amplifier Stage;304
10;Appendix A: Answers to Numerical Questions;306
11;Appendix B: References for Further Reading;308
12;Appendix C: Proof of;311
13;Appendix D: Classification of Symbols;312
14;Index;316