E-Book, Englisch, 640 Seiten, Web PDF
Andersen / Bøttiger / Knudsen Ion Beam Analysis
1. Auflage 2017
ISBN: 978-1-4832-7495-9
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Proceedings of the Fourth International Conference on Ion Beam Analysis, Aarhus, June 25-29, 1979
E-Book, Englisch, 640 Seiten, Web PDF
ISBN: 978-1-4832-7495-9
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Nuclear Instruments and Methods, Volume 168: Ion Beam Analysis presents the proceedings of the Fourth International Conference on Ion Beam Analysis, held in Aarhus, Denmark, on June 25-29, 1979. This book provides information pertinent to the methods and applications ion beam analysis. Organized into eight parts encompassing 95 chapters, this volume begins with an overview of the straggling of energy loss for protons and alpha particles. This text then examines the method for the calculation of the stopping of energetic ions in matter. Other chapters consider the method for measuring relative stopping powers for light energetic ions in highly reactive materials. This book discusses as well the stopping power and straggling of lithium ions with velocities around the Bohr velocity. The final chapter deals with the adsorption behavior of different gases on monocrystalline platinum surfaces. This book is a valuable resource for scientists, technologists, students, and research workers.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;Ion Beam Analysis;6
3;Copyright Page;7
4;Table of Contents;12
5;PREFACE;8
6;Conference Photo;9
7;Part I: Stopping power and straggling;18
7.1;CHAPTER 1. STRAGGLING IN ENERGY LOSS OF ENERGETIC HYDROGEN AND HELIUM IONS;18
7.1.1;1. Introduction;18
7.1.2;2. Theory;18
7.1.3;3. Comparison with experimental results for H and He ions;26
7.1.4;References;31
7.2;CHAPTER 2. THE STOPPING OF ENERGETIC IONS IN SOLIDS;34
7.2.1;1. Introduction;34
7.2.2;2. Electronic stopping of ions;34
7.2.3;3. Interaction of a particle with a free electron gas;34
7.2.4;4. The effective charge of energetic ions;35
7.2.5;5. The charge distributions of elemental targets;37
7.2.6;6. Distribution of energy loss to target electrons;37
7.2.7;7. Nuclear stopping of ions;38
7.2.8;8. Relativistic corrections;38
7.2.9;References;41
7.3;CHAPTER 3. ENERGY-LOSS STRAGGLING OF ALPHA PARTICLES IN Al, Ni AND Au;42
7.3.1;1. Introduction;42
7.3.2;2. Experimental method;42
7.3.3;3. Results and discussion;42
7.3.4;References;44
7.4;CHAPTER 4. SEARCH FOR THE INFLUENCE OF CHEMICAL EFFECT ON THE STOPPING POWER: THE CASE OF OXIDES;46
7.4.1;1. Introduction;46
7.4.2;2. Method of study;46
7.4.3;3. Experimental;46
7.4.4;4. Results and discussion;47
7.4.5;References;48
7.5;CHAPTER 5. STOPPING RATIOS OF 50-300 keV LIGHT IONS IN METALS;50
7.5.1;1. Introduction;50
7.5.2;2. The simplified stopping function;50
7.5.3;3. Experimental;51
7.5.4;4. Data evaluation;52
7.5.5;5. Results and discussion;52
7.5.6;References;56
7.6;CHAPTER 6. HYDROGEN AND HELIUM STOPPING POWERS OF RARE-EARTH METALS;58
7.6.1;1. Introduction;58
7.6.2;2. Experimental;59
7.6.3;3. Data analysis;60
7.6.4;4. Results and discussion;61
7.6.5;References;66
7.7;CHAPTER 7. ENERGY LOSS OF LIGHT IONS IN DIAMOND;68
7.7.1;1. Introduction;68
7.7.2;2. Experiment;68
7.7.3;3. Results and discussion;69
7.7.4;References;72
7.8;CHAPTER 8. ELECTRONIC ENERGY LOSS OF H, D AND He IN Au BELOW 20 keV;74
7.8.1;1. Introduction;74
7.8.2;2. Experiment;74
7.8.3;3. Results;75
7.8.4;4. Discussion;77
7.8.5;5. Conclusions;78
7.8.6;References;78
7.9;CHAPTER 9. STOPPING POWERS AND BACKSCATTERED CHARGE FRACTIONS FOR 20–150 keV H+ AND He+ ON GOLD;80
7.9.1;1. Introduction;80
7.9.2;2. Experimental;80
7.9.3;3. Analysis;81
7.9.4;4. Results and discussion;83
7.9.5;5. Summary;85
7.9.6;References;85
7.10;CHAPTER 10. RANGE PARAMETERS OF PROTONS IN SILICON IMPLANTED AT ENERGIES FROM 0.5 TO 300 keV;86
7.10.1;1. Introduction;86
7.10.2;2. Experiment;86
7.10.3;3. Analysis of moments and comparison with theory
;88
7.10.4;4. Stopping power of hydrogen in silicon;90
7.10.5;References;90
7.11;CHAPTER 11. STOPPING POWER AND STRAGGLING OF 80-500 keV LITHIUM IONS IN C, Al, Ni, Cu, Se, Ag, AND Te;92
7.11.1;1. Introduction;92
7.11.2;2. Experimental technique;92
7.11.3;3. Stopping power results and discussion;94
7.11.4;4. Straggling results and discussion;95
7.11.5;5. Conclusions;96
7.11.6;References;97
7.12;CHAPTER 12. ENERGY LOSS OF PROTONS IN Si, Ge AND Mo;98
7.12.1;1. Introduction;98
7.12.2;References;101
8;Part II: Cross sections for ion beam analysis;102
8.1;CHAPTER 13. NUCLEAR CROSS SECTIONS FOR ION BEAM ANALYSIS;102
8.1.1;1. Introduction;102
8.1.2;2. Ion beam analysis;102
8.1.3;3. Ion-ion reactions;103
8.1.4;4. Ion-neutron reactions;105
8.1.5;5. Ion-gamma reactions;106
8.1.6;6. Conclusion;107
8.1.7;References;108
8.2;CHAPTER 14. MICROANALYSIS OF FLUORINE BY NUCLEAR REACTIONS I. 19F(p, a0)16O and 19F(p, a y )16O reactions;110
8.2.1;1. Introduction;110
8.2.2;2. Experimental;111
8.2.3;3. Results;112
8.2.4;4. Discussion and applications;117
8.2.5;References;120
8.3;CHAPTER 15. THE 14N(d,p5)15N CROSS SECTION, 0.32-1.45 MeV;122
8.3.1;1. Introduction;122
8.3.2;2. Experimental procedure and analysis;122
8.3.3;3. Results and discussion;124
8.3.4;References;126
8.4;CHAPTER 16. A NOTE ON THE 3He + D NUCLEAR-REACTION CROSS SECTION;128
8.4.1;1. Introduction;128
8.4.2;2. Experimental;128
8.4.3;3. Results and discussion;130
8.4.4;References;131
8.5;CHAPTER 17. PROTON INDUCED y-RAY YIELDS;132
8.5.1;1. Introduction;132
8.5.2;2. Experimental method;133
8.5.3;3. Stopping power corrections;133
8.5.4;4. Experimental results;134
8.5.5;5. Discussion of results;135
8.5.6;References;137
8.6;CHAPTER 18. QUANTITATIVE MICRO ANALYSIS BY HEAVY ION BEM INDUCED X-RAY EXCITATION;138
8.6.1;1. Introduction;138
8.6.2;2. Experiment;138
8.6.3;3. Analysis;139
8.6.4;4. Discussion;139
8.6.5;References;140
8.7;CHAPTER 19. DETERMINATION OF OXYGEN IN THIN FILMS WITH THE 16O(3He, py)18F REACTION
;142
8.7.1;1. Introduction;142
8.7.2;2. Experimental details and results;143
8.7.3;3. Application to chrome black;144
8.7.4;4. Summary;145
8.7.5;References;146
8.8;CHAPTER 20. A COMPARISON OF THIN AND THICK TARGET METHODS OF MEASURING PROTON-INDUCED K-SHELL IONIZATION CROSS-SECTIONS;148
8.8.1;1. Introduction;148
8.8.2;2. Experimental procedure;149
8.8.3;3. Data analysis;149
8.8.4;4. Results;150
8.8.5;5. Discussion;152
8.8.6;6. Conclusions;154
8.8.7;References;154
9;Part III: Methods and apparatus;156
9.1;CHAPTER 21. HIGH RESOLUTION SCANNING ION PROBES: APPLICATIONS TO PHYSICS AND
BIOLOGY;156
9.1.1;1. Introduction
;156
9.1.2;2. Ion probes of high spatial resolution;157
9.1.3;3. STIM studies of hydrogen ion-solid interactions
;158
9.1.4;4. Prospects for high resolution imaging microanalysis;161
9.1.5;5. Contrast and minimization of dose in the STIM and STEM
;163
9.1.6;References;165
9.2;CHAPTER 22. USE OF NON-COULOMB H ION BACKSCATTERING TO CHARACTERIZE THICK ANODIZED ALUMINUM FILMS;168
9.2.1;1. Introduction;168
9.2.2;2. Calculation from stopping powers;169
9.2.3;3. Experimental;170
9.2.4;4. Application to anodized layers;171
9.2.5;5. Conclusions;172
9.2.6;References;172
9.3;CHAPTER 23. SURFACE TOPOLOGY USING RUTHERFORD BACKSCATTERING;174
9.3.1;1. Introduction;174
9.3.2;2. Scattering from smooth surfaces;174
9.3.3;3. Rough surfaces;175
9.3.4;4. Periodic surfaces;176
9.3.5;5. Conservation rules;177
9.3.6;6. The experiment;177
9.3.7;7. Results;177
9.3.8;8. Surfaces with random roughness;177
9.3.9;References;179
9.4;CHAPTER 24. EFFECTS OF SURFACE ROUGHNESS ON BACKSCATTERING SPECTRA;180
9.4.1;1. Introduction;180
9.4.2;2. Experimental details;180
9.4.3;3. Results;181
9.4.4;4. Conclusions
;184
9.4.5;References;184
9.5;CHAPTER 25. A GOLD AND ALUMINIUM IMPLANTED STANDARD FOR ION BEAM EXPERIMENTS;186
9.5.1;1. Introduction;186
9.5.2;2. Experimental techniques; preparation of samples;187
9.5.3;3. Principle of the method;187
9.5.4;4. Experimental results and discussion;188
9.5.5;5. Conclusions;190
9.5.6;References;191
9.6;CHAPTER 26. IRRADIATION CHAMBER AND SAMPLE CHANGER FOR BIOLOGICAL SAMPLES;192
9.6.1;1. Introduction;192
9.6.2;2. Apparatus;193
9.6.3;3. First results;195
9.6.4;References;196
9.7;CHAPTER 27. THE HIGH SENSITIVITY MEASUREMENT OF CARBON USING THE NUCLEAR MICROPROBE;198
9.7.1;1. Introduction;198
9.7.2;2. Optimisation of the carbon measurement sensitivity;198
9.7.3;3. The measurement of carbon in nickel 'tab' monitors;200
9.7.4;4. Light element interferences;201
9.7.5;5. The measurement of the distribution of carbon in a carbon meter iron membrane;202
9.7.6;6. Conclusions;202
9.7.7;References;202
9.8;CHAPTER 28. A NEW TECHNIQUE FOR BACKSCATTERING ANALYSIS;204
9.8.1;1. Introduction;204
9.8.2;2. Analytical procedure;205
9.8.3;3. Experimental procedure;205
9.8.4;4. Conclusion;206
9.8.5;Appendix;206
9.8.6;References;207
9.9;CHAPTER 29. ELIMINATION OF THE BEAM EFFECT ON CHANNELING DIPS OF BISMUTH IMPLANTED IN SILICON;208
9.9.1;1. Introduction;208
9.9.2;2. Experimental;208
9.9.3;3. Results and discussion;209
9.9.4;4. Conclusion;211
9.9.5;References;211
9.10;CHAPTER 30. DECHANNELLING AND THE NATURE OF DEFECT STRUCTURES IN NATURAL TYPE la DIAMONDS;212
9.10.1;1. Introduction;212
9.10.2;2. Classification of diamonds;213
9.10.3;3. Experimental methods;214
9.10.4;4. Results and discussion;214
9.10.5;References;219
9.11;CHAPTER 31. THE NUCLEAR MICROPROBE DETERMINATION OF THE SPATIAL DISTRIBUTION OF STABLE ISOTOPE TRACERS;220
9.11.1;1. Introduction;220
9.11.2;2. Appraisal of the nuclear microprobe determination of the spatial distribution of stable isotope tracers;220
9.11.3;3. Conclusion and future prospects;225
9.11.4;References;225
9.12;CHAPTER 32. CHARACTERIZATION OF AMORPHOUS SILICON FILMS BY RUTHERFORD BACKSCATTERING SPECTROMETRY;228
9.12.1;1. Introduction;228
9.12.2;2. Experimental;229
9.12.3;3. Experimental results and discussions;229
9.12.4;4. Summary and conclusion;232
9.12.5;References;232
9.13;CHAPTER 33. A METHOD FOR DETERMINING DEPTH PROFILES OF TRANSITION ELEMENTS IN STEELS;234
9.13.1;1. Introduction;234
9.13.2;2. Experimental profiling;236
9.13.3;Conclusions;238
9.13.4;References;238
9.14;CHAPTER 34. DEPTH PROFILING OF DEUTERIUM WITH THE D(3He,P)4He REACTION;240
9.14.1;1. Introduction;240
9.14.2;2. Experimental;240
9.14.3;3. Results;241
9.14.4;4. Conclusions;241
9.14.5;References;242
9.15;CHAPTER 35. COINCIDENCE MEASUREMENTS BETWEEN SCATTERED PARTICLES AND X-RAYS TO OBTAIN HIGH DEPTH AND MASS RESOLUTION;244
9.15.1;1. Introduction;244
9.15.2;2. General considerations;244
9.15.3;3. Experiment and results;246
9.15.4;4. Discussion;248
9.15.5;References;248
9.16;CHAPTER 36. ION BEAM MONITORING USING THIN SELF-SUPPORTING REFERENCE FOILS;250
9.16.1;1. Introduction;250
9.16.2;2. Principle of the method;250
9.16.3;3. Experimental details;251
9.16.4;4. Results;255
9.16.5;5. Conclusion;256
9.16.6;References;257
9.17;CHAPTER 37. HEAVY ION MICROLITHOGRAPHY - A NEW TOOLTO GENERATE AND INVESTIGATE SUBMICROSCOPIC STRUCTURES;258
9.17.1;1. Introduction;258
9.17.2;2. How heavy ion microlithograms are made;258
9.17.3;3. Some experimental results;259
9.17.4;4. The special usefulness of heavy ions for microlithography;260
9.17.5;5. Conclusions;262
9.17.6;References;263
9.18;CHAPTER 38. A NEW ELECTROSTATIC ION MICROPROBE SYSTEM;264
9.18.1;1. Introduction;264
9.18.2;2. Spherical aberration;264
9.18.3;3. Multiple element lenses;265
9.18.4;4. Discussion;266
9.18.5;References;266
9.19;CHAPTER 39. TRACE ELEMENT DETECTION SENSITIVITY IN PIXE ANALYSIS BY MEANS OF AN EXTERNAL PROTON BEAM;268
9.19.1;1. Introduction;268
9.19.2;2. Experimental set-up;269
9.19.3;3. Experimental determination of minimum detection limits;270
9.19.4;4. Conclusions;273
9.19.5;References;274
9.20;CHAPTER 40. ADVANCES IN THE USE OF PIXE AND PESA FOR AIR POLLUTION SAMPLING;276
9.20.1;1. Introduction;276
9.20.2;2. Aerosol analysis by PIXE and PESA;276
9.20.3;3. Air particulate samplers;277
9.20.4;4. Computer codes;278
9.20.5;5. Applications to industrial and coastal aerosols;278
9.20.6;6. Conclusion
;280
9.20.7;References;280
10;Part IV: Radiation damage, defects, and diffusion;282
10.1;CHAPTER 41. ION-BEAM-INDUCED MIGRATION AND ITS EFFECT ON CONCENTRATION PROFILES;282
10.1.1;1. Introduction;282
10.1.2;2. Atomic displacement rates;282
10.1.3;3. Cascade mixing;283
10.1.4;4. Enhanced diffusion;284
10.1.5;5. Diffusion along extended defects;287
10.1.6;6. Defect trapping;288
10.1.7;7. Conclusion;290
10.1.8;References;290
10.2;CHAPTER 42. LASER INDUCED SURFACE ALLOY FORMATION AND DIFFUSION OF ANTIMONY IN ALUMINIUM;292
10.2.1;1. Introduction;292
10.2.2;2. Experimental;293
10.2.3;3. Results;293
10.2.4;4. Discussion;296
10.2.5;5. Conclusions;298
10.2.6;References;298
10.3;CHAPTER 43. THE APPLICATION OF LOW ANGLE RUTHERFORD BACKSCATTERING AND CHANNELLING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS;300
10.3.1;1. Introduction;300
10.3.2;2. Experimental;300
10.3.3;3. Results;301
10.3.4;4. Discussion;303
10.3.5;5. Conclusions;304
10.3.6;References;305
10.4;CHAPTER 44. THE APPLICATION OF ION BEAM METHODS TO DIFFUSION AND PERMEATION MEASUREMENTS;306
10.4.1;1. Introduction;306
10.4.2;2. Method;306
10.4.3;3. Experimental setup;308
10.4.4;4. Results and discussion;309
10.4.5;5. Conclusion;310
10.4.6;References;311
10.5;CHAPTER 45. D AND 3He TRAPPING AND MUTUAL REPLACEMENT IN MOLYBDENUM;312
10.5.1;1. Introduction;312
10.5.2;2. Experimental;312
10.5.3;3. Results;313
10.5.4;4. Discussion;314
10.5.5;References;316
10.6;CHAPTER 46. DEUTERIUM ENRICHMENT DURING ION BOMBARDMENT IN VD0.01 ALLOYS;318
10.6.1;1. Introduction;318
10.6.2;2. Experimental;318
10.6.3;3. Results and discussion;319
10.6.4;4. Conclusion;322
10.6.5;References;322
10.7;CHAPTER 47. ION-BEAM-INDUCED ANNEALING EFFECTS IN GaAs;324
10.7.1;1. Introduction;324
10.7.2;2. Experimental;324
10.7.3;3. Results;324
10.7.4;4. Discussion;328
10.7.5;5. Conclusion;329
10.7.6;References;329
10.8;CHAPTER 48. (110) Si SURFACE PEAK ANALYSIS BY 100-350 keV PROTONS;330
10.8.1;1. Introduction;330
10.8.2;2. Experimental;330
10.8.3;3. Results and discussion;331
10.8.4;4. Summary;332
10.8.5;References;332
10.9;CHAPTER 49. DEPENDENCE OF DEFECT STRUCTURES ON IMPLANTED IMPURITY SPECIES IN Al SINGLE CRYSTALS;334
10.9.1;1. Introduction;334
10.9.2;2. Experimental;334
10.9.3;3. Results;335
10.9.4;4. Summary and conclusions;337
10.9.5;References;338
10.10;CHAPTER 50. ANALYSIS OF THE DECHANNELLING MECHANISM DUE TO DISLOCATIONS;340
10.10.1;1. Introduction;340
10.10.2;2. Harmonic oscillator model of planar channelling;340
10.10.3;3. Transparency effect;342
10.10.4;4. Harmonic oscillator model and transparency effect;343
10.10.5;5. Comparison with experiment and discussion;344
10.10.6;References;345
11;Part V: Sputter profiling and SIMS;346
11.1;CHAPTER 51. RECOIL MIXING IN SOLIDS BY ENERGETIC ION BEAMS;346
11.1.1;1. Introduction;346
11.1.2;2. Derivation of general formula;347
11.1.3;3. Results and discussion;349
11.1.4;4. Conclusions;357
11.1.5;References;359
11.2;CHAPTER 52. ASPECTS OF QUANTITATIVE SECONDARY ION MASS SPECTROMETRY;360
11.2.1;1. Introduction;360
11.2.2;2. Secondary ion production;360
11.2.3;3. SIMS instrumentation and quantitation;361
11.2.4;4. Secondary ion yield enhancement;362
11.2.5;5. Relative secondary ion yields of elements;365
11.2.6;6. Empirical formulas for the degree
of ionization;367
11.2.7;7. Practical analyses;369
11.2.8;8. Conclusions;372
11.2.9;References;372
11.3;CHAPTER 53. SPUTTERING RATES OF MINERALS AND IMPLICATIONS FOR ABUNDANCES OF SOLAR ELEMENTS IN LUNAR SAMPLES;374
11.3.1;1. Introduction;374
11.3.2;2. Experimental;375
11.3.3;3. Results and discussion;377
11.3.4;4. Importance for lunar materials;380
11.3.5;5. Conclusions;381
11.3.6;References;382
11.4;CHAPTER 54. TRACE ANALYSIS IN CADMIUM TELLURIDE BY HEAVY ION INDUCED X-RAY EMISSION AND BY SIMS;384
11.4.1;1. Introduction;384
11.4.2;2. Experimental conditions;385
11.4.3;3. Results and discussion;386
11.4.4;4. Conclusion;388
11.4.5;References;388
11.5;CHAPTER 55. TOWARDS A UNIVERSAL MODEL FOR SPUTTERED ION EMISSION;390
11.5.1;1. Introduction;390
11.5.2;2. Exponential variation of pure element ion yields;391
11.5.3;3. Role of nearest neighbors;393
11.5.4;4. Role of the surface band gap;393
11.5.5;5. Discussion;394
11.5.6;6. Conclusion;394
11.5.7;References;394
11.6;CHAPTER 56. ION INDUCED AUGER SPECTROSCOPY;396
11.6.1;1. Introduction;396
11.6.2;2. Results;396
11.6.3;3. Conclusion;399
11.6.4;References;399
11.7;CHAPTER 57. DEPTH DISTRIBUTIONS OF LOW ENERGY DEUTERIUM IMPLANTED INTO SILICON AS DETERMINED BY SIMS;400
11.7.1;1. Introduction;400
11.7.2;2. Basic sputtering considerations;400
11.7.3;3. Experiment and results;401
11.7.4;4. Calculations of range and straggling;403
11.7.5;5. Summary and conclusions;403
11.7.6;References;403
11.8;CHAPTER 58. DISTORTION OF DEPTH PROFILES DURING SPUTTERING;406
11.8.1;I. General description of collisional mixing;406
11.8.2;1. Introduction;406
11.8.3;2. Basic equation;407
11.8.4;3. Characteristic depths;408
11.8.5;4. General solution;408
11.8.6;5. Diffusion approximation;410
11.8.7;6. Connection with previous treatments;411
11.8.8;References;411
11.9;CHAPTER 59. DEPTH RESOLUTION OF SPUTTER PROFILING INVESTIGATED BYCOMBINED AUGER-X-RAY ANALYSIS OF THIN FILMS;412
11.9.1;1. Introduction;412
11.9.2;2. Method;412
11.9.3;3. Results;412
11.9.4;4. Conclusion;415
11.9.5;References;415
11.10;CHAPTER 60. EDGE-EFFECTS CORRECTION IN DEPTH PROFILES OBTAINED BY ION-BEAM SPUTTERING;416
11.10.1;1. Introduction;416
11.10.2;2. Theory;416
11.10.3;3. Correction procedure;418
11.10.4;4. Conclusion;421
11.10.5;References;421
11.11;CHAPTER 61.
SURFACE ROUGHENING OF COPPER BY LOW ENERGY ION BOMBARDMENT;422
11.11.1;1. Introduction;422
11.11.2;2. Experimental;422
11.11.3;3. Results;423
11.11.4;4. Discussion;424
11.11.5;References;426
11.12;CHAPTER 62. APPLICATION OF PIXE TO THE MEASUREMENT OF SPUTTER DEPOSITS;428
11.12.1;1. Motivation;428
11.12.2;2. Experiment;429
11.12.3;3. Discussion;430
11.12.4;4. Conclusions;431
11.12.5;References;431
11.13;CHAPTER 63. DETERMINATION OF CARBON IN EFG SILICON RIBBONS BY NUCLEAR TECHNIQUES AND SIMS;432
11.13.1;1. Introduction;432
11.13.2;2. Nuclear reactions and/orchannelling experiments;432
11.13.3;3. SIMS analysis;433
11.13.4;4. Discussion and conclusion;434
11.13.5;References;434
11.14;LIGHT EMISSION FROM SPUTTERED OXYGEN;436
11.14.1;1. Introduction;436
11.14.2;2. Experimental method;436
11.14.3;3. Recorded VUV spectra;437
11.14.4;4. Comparison of oxygen and of target emission;437
11.14.5;5. Discussion;438
11.14.6;References;439
12;Part VI: Applications to arts and archaeology;442
12.1;CHAPTER 64. RADIOISOTOPE DETECTION WITH TANDEM ELECTROSTATIC ACCELERATORS;442
12.1.1;1. Introduction;442
12.1.2;2. Experimental procedures;443
12.1.3;3. Measurements of 14C;444
12.1.4;4. Measurement of 36C1;446
12.1.5;5. Measurement of 10Be;447
12.1.6;6. Measurement of 26A1;448
12.1.7;7. Future prospects;449
12.1.8;References;449
12.2;CHAPTER 65. A POSSIBLE APPLICATION OF THE SIMS METHOD TO DETERMINE THE PROVENANCE OF ARCHAEOLOGICAL OBJECTS;452
12.2.1;1. Introduction;452
12.2.2;2. Experimental;452
12.2.3;3. Results and discussion;452
12.2.4;References;453
12.3;CHAPTER 66. PIXE RESEARCH WITH AN EXTERNAL BEAM;454
12.3.1;1. Introduction;454
12.3.2;2. Experimental method;454
12.3.3;3. Experimental results;455
12.3.4;4. Further experiments;457
12.3.5;References;457
12.4;CHAPTER 67. ION BACKSCATTERING AND X-RAY INVESTIGATIONS OF VIOLIN VARNISH AND WOOD;458
12.4.1;1. Introduction;458
12.4.2;2. Experimental set-up;458
12.4.3;3. Results;459
12.4.4;4. Consideration of the analyzed depths in the X-ray and the RBS measurements;461
12.4.5;5. Discussion;462
12.4.6;References;462
12.5;CHAPTER 68. PIXE-PIGME STUDIES OF ARTEFACTS;464
12.5.1;1. Introduction;464
12.5.2;2. Method;464
12.5.3;3. Results;467
12.5.4;4. Conclusion;469
12.5.5;References;469
12.6;CHAPTER 69. APPLICATIONS OF (n, p) AND (n, a) REACTIONS AND A BACKSCATTERING TECHNIQUE TO FUSION REACTOR MATERIALS, ARCHEOMETRY, AND NUCLEAR SPECTROSCOPY;470
12.6.1;1. Introduction;470
12.6.2;2. Application to CTR wall problems;470
12.6.3;3. Application to archaeometry;471
12.6.4;4. Application to nuclear spectroscopy;473
12.6.5;References;474
13;Part VII: New applications of ion beam analysis;476
13.1;CHAPTER 70. ION-BEAM ANALYSIS OF METEORITIC AND LUNAR SAMPLES;476
13.1.1;1. Introduction;476
13.1.2;2. Meteorites;476
13.1.3;3. Surface studies of lunar materials;480
13.1.4;4. Conclusions;483
13.1.5;References;484
13.2;CHAPTER 71. RBS AND CHANNELLING ANALYSIS OF As AND Ga IN LASER DOPED SILICON;486
13.2.1;1. Introduction;486
13.2.2;2. Experimental;486
13.2.3;3. Results and discussion;487
13.2.4;4. Conclusion;489
13.2.5;References;489
13.3;CHAPTER 72. EVAPORATION LOSS AND DIFFUSION OF ANTIMONY IN SILICON UNDER PULSED LASER IRRADIATION;490
13.3.1;1. Introduction;490
13.3.2;2. Experimental;490
13.3.3;3. Results;491
13.3.4;4. Discussion;492
13.3.5;5. Conclusions;493
13.3.6;References;493
13.4;CHAPTER 73. CORRECTION FACTOR FOR HAIR ANALYSIS BY PIXE;496
13.4.1;1. Introduction;496
13.4.2;2. Theoretical formulation;496
13.4.3;3. Determination of the function G(r);497
13.4.4;4. Determination of the correction factor;498
13.4.5;5. Experiment;499
13.4.6;6. Conclusions;500
13.4.7;References;500
13.5;CHAPTER 74. INVESTIGATION OF THE SOLID-STATE REACTION BETWEEN NICKELOXIDE AND ALUMINA BY RUTHERFORD BACKSCATTERING (RBS);502
13.5.1;1. Introduction;502
13.5.2;2. Experimental;502
13.5.3;3. Results;503
13.5.4;4. Discussion;505
13.5.5;References;506
13.6;CHAPTER 75. AN INTERFACE - MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH;508
13.6.1;1. Introduction;508
13.6.2;2. The interface - marker technique; MoSi2-WSi2 growth;508
13.6.3;3. NbSi2-TaSi2 growth;510
13.6.4;4. VSi2-NbSi2 growth;511
13.6.5;5. Suicides of Pd and Pt;512
13.6.6;6. Conclusion;513
13.6.7;References;513
13.7;CHAPTER 76. NUCLEAR REACTION ANALYSIS OF HYDROGEN IN AMORPHOUS SILICON AND SILICON CARBIDE FILMS;516
13.7.1;1. Introduction;516
13.7.2;2. Experiments;516
13.7.3;3. Effects of ion bombardments;518
13.7.4;4. Conclusion;520
13.7.5;References;521
13.8;CHAPTER 77. MEASUREMENTS OF 10Be DISTRIBUTIONS USING A TANDEM VAN DE GRAAFF ACCELERATOR;522
13.8.1;1. Introduction;522
13.8.2;2. Uses of 10Be;522
13.8.3;3. Tandem measurement procedure and characteristics;523
13.8.4;4. The manganese nodule problem;525
13.8.5;5. Further applications;526
13.8.6;References;526
13.9;CHAPTER 78. THE USE OF PROTON INDUCED X-RAY EMISSION IN THE DESIGN AND EVALUATION OF CATALYSTS;528
13.9.1;1. Introduction;528
13.9.2;2. Experimental;529
13.9.3;3. Results and discussion;529
13.9.4;4. Conclusions;532
13.9.5;References;533
13.10;CHAPTER 79. PIXE AND NRA ENVIRONMENTAL STUDIES BY MEANS OF LICHEN INDICATORS;534
13.10.1;1. Introduction;534
13.10.2;2. Experimental procedure;535
13.10.3;3. Fluorine air pollution;535
13.10.4;4. Automobile traffic pollution;536
13.10.5;5. Conclusions;538
13.10.6;References;538
13.11;CHAPTER 80. THE USE OF PIXE FOR THE MEASUREMENT OF THORIUM AND URANIUM AT µgg-1 LEVELS IN THICK ORE SAMPLES;540
13.11.1;1. Introduction;540
13.11.2;2. The experiment;540
13.11.3;3. The detector;540
13.11.4;4. The electronics;541
13.11.5;5. Sample preparation;541
13.11.6;6. Thorium/uranium X-ray spectra;541
13.11.7;7. Results and discussion;542
13.11.8;8. Thick target yields;543
13.11.9;9. Comparison with neutron activation;543
13.11.10;10. Conclusion;545
13.11.11;References;545
13.12;CHAPTER 81. LIGHT VOLATILES IN DIAMOND: PHYSICAL INTERPRETATION AND GENETIC SIGNIFICANCE;546
13.12.1;1. Introduction;546
13.12.2;2. Experimental techniques;546
13.12.3;3. Results - general comments;548
13.12.4;4. Results - some specific questions;549
13.12.5;5. Conclusions;550
13.12.6;References;550
13.13;CHAPTER 82. NUCLEAR REACTION ANALYSIS FOR MEASURING MOISTURE PROFILES IN GRAPHITE/EPOXY COMPOSITES;552
13.13.1;1. Introduction;552
13.13.2;2. Experimental procedure;552
13.13.3;3. Results and discussion;554
13.13.4;4. Conclusion;556
13.13.5;References;556
13.14;CHAPTER 83. CHANGES IN THE SURFACE COMPOSITION OF Ag-Pd, Au-Pd AND Cu-Pd ALLOYS UNDER ION BOMBARDMENT;558
13.14.1;1. Introduction;558
13.14.2;2. Experimental results;558
13.14.3;3. Discussion;560
13.14.4;References;561
13.15;CHAPTER 84. HYDROGEN RATIOS AND PROFILES IN DEPOSITED AMORPHOUS AND POLYCRYSTALLINE FILMS AND IN METALS USING NUCLEAR TECHNIQUES;564
13.15.1;1. Introduction;564
13.15.2;2. Experimental conditions;564
13.15.3;3. Analysis;565
13.15.4;4. Survey of experimental results;566
13.15.5;References;567
13.16;CHAPTER 85. BIOMEDICAL APPLICATION OF PIXE IN UNIVERSITY OF LIEGE;568
13.16.1;1. Introduction;568
13.16.2;2. Experimental;568
13.16.3;3. Applications;569
13.16.4;References;573
13.17;CHAPTER 86. PARTICLE-INDUCED X-RAY EMISSION (PIXE) ANALYSIS OF BIOLOGICAL MATERIALS: PRECISION, ACCURACY AND APPLICATION TO CANCER TISSUES;574
13.17.1;1. Introduction;574
13.17.2;2. Experimental;575
13.17.3;3. Calibration of the PIXE set-up and correction for matrix effects;576
13.17.4;4. Results and discussion;577
13.17.5;References;579
13.18;CHAPTER 87. ELEMENTAL MICROANALYSIS OF BIOLOGICAL AND MEDICAL SPECIMENS WITH A SCANNING PROTON MICROPROBE;580
13.18.1;1. Introduction;580
13.18.2;2. Spot analysis;580
13.18.3;3. Qualitative mapping;581
13.18.4;4. Quantitative scanning analysis;582
13.18.5;5. Contamination;583
13.18.6;6. Specimen preparation;584
13.18.7;7. Beam damage;584
13.18.8;8. Conclusion;585
13.18.9;References;586
14;Part VIII: Surface studies;588
14.1;CHAPTER 88. ION BEAM INDUCED DESORPTION OF SURFACE LAYERS;588
14.1.1;1. Introduction;588
14.1.2;2. Ion bombardment, physical basis;588
14.1.3;3. Experimental procedure;589
14.1.4;4. Desorption cross-sections;590
14.1.5;5. Conclusions;593
14.1.6;References;594
14.2;CHAPTER 89. ION INDUCED SECONDARY ELECTRON EMISSION AS A PROBE FOR ADSORBED OXYGEN ON TUNGSTEN;596
14.2.1;1. Introduction;596
14.2.2;2. Experimental;596
14.2.3;3. Results and discussion;597
14.2.4;4. Conclusions;600
14.2.5;References;600
14.3;CHAPTER 90. ANALYSIS OF SURFACE CONTAMINANT COVERING BY ION-ELECTRON SPECTROSCOPY METHODS;602
14.3.1;1. Introduction;602
14.3.2;2. Experimental method;602
14.3.3;3. Results and discussion;603
14.3.4;References;605
14.4;CHAPTER 91. Si(001) SURFACE STUDIES USING HIGH ENERGY ION SCATTERING;606
14.4.1;1. Introduction;606
14.4.2;2. Experimental;606
14.4.3;References;610
14.5;CHAPTER 92. CREATION OF SURFACE DAMAGE ON A NICKEL (110) SURFACE BY BOMBARDMENT WITH 3–30 keV NOBLE GAS IONS;612
14.5.1;1. Introduction;612
14.5.2;2. Experimental;612
14.5.3;3. Method;613
14.5.4;4. Results and discussion;613
14.5.5;5. Summary;616
14.5.6;References;616
14.6;CHAPTER 93. HEAVY ION INDUCED DESORPTION OF ORGANIC COMPOUNDS;618
14.6.1;1. Introduction;618
14.6.2;2. Experimental results;618
14.6.3;3. Discussion;620
14.6.4;4. Conclusion;621
14.6.5;References;622
14.7;CHAPTER 94. ION-INDUCED ADSORPTION OF OXYGEN AT A Cu(110) SURFACE;624
14.7.1;1. Introduction;624
14.7.2;2. Experiments;624
14.7.3;3. Experimental results;624
14.7.4;4. Discussion;626
14.7.5;References;626
14.8;CHAPTER 95. ABSOLUTE COVERAGE MEASUREMENT OF ADSORBED CO AND D2 ON PLATINUM;628
14.8.1;1. Introduction;628
14.8.2;2. Experimental;628
14.8.3;3. Calibration of nuclear reaction cross-sections;629
14.8.4;4. Surface adsorption studies;631
14.8.5;5. Summary;632
14.8.6;References;632
15;AUTHOR INDEX;634




