Bhattacharya / De Photoemission from Optoelectronic Materials and their Nanostructures

1. Auflage 2010
ISBN: 978-0-387-78606-3
Verlag: Springer-Verlag
Format: PDF
Kopierschutz: Wasserzeichen (»Systemvoraussetzungen)

E-Book, Englisch, 329 Seiten

In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.

Autoren/Hrsg.

Bhattacharya, Sitangshu

De, Debashis

Inhaltsverzeichnis

1;Preface;6
1.1;Acknowledgments;9
1.1.1; Acknowledgment by Kamakhya Prasad Ghatak;9
1.1.2; Acknowledgment by Sitangshu Bhattacharya;10
1.1.3; Acknowledgment by Debashis De;10
1.1.4; Joint Acknowledgments;10
2;Contents;11
3;List of Symbols;15
4;1 Fundamentals of Photoemission from Wide GapMaterials;18
4.1;1.1 Introduction;18
4.2;1.2 Theoretical Background;21
4.2.1;1.2.1 Photoemission from Bulk Semiconductors;21
4.2.2;1.2.2 Photoemission Under Magnetic Quantization;9
4.2.3;1.2.3 Photoemission in the Presence of Cross Fields;10
4.2.4;1.2.4 Photoemission from Quantum Wells in Ultrathin Films of Wide Gap Materials;10
4.2.5;1.2.5 Photoemission from Quantum Well Wires of Wide Gap Materials;10
4.2.6;1.2.6 Photoemission from Quantum Dots of Wide Gap Materials;39
4.2.7;1.2.7 Photoemission Under Magneto-Size Quantization (MSQ);41
4.3;1.3 Results and Discussions;42
4.4;References;51
5;2 Fundamentals of Photoemission from Quantum Wells in Ultrathin Films and Quantum Well Wires of Various Nonparabolic Materials;54
5.1;2.1 Introduction;54
5.2;2.2 Theoretical Background;56
5.2.1;2.2.1 Photoemission from Nonlinear Optical Materials;56
5.2.2;2.2.2 Photoemission from III--V Materials;60
5.2.3;2.2.3 Photoemission from II--VI Compounds;63
5.2.4;2.2.4 Photoemission from n-Gallium Phosphide;65
5.2.5;2.2.5 Photoemission from n-Germanium;67
5.2.6;2.2.6 Photoemission from Platinum Antimonide;73
5.2.7;2.2.7 Photoemission from Stressed Materials;76
5.2.8;2.2.8 Photoemission from Bismuth;79
5.2.8.1;2.2.8.1 The McClure and Choi Model;79
5.2.8.2;2.2.8.2 The Hybrid Model;82
5.2.8.3;2.2.8.3 The Cohen Model;84
5.2.8.4;2.2.8.4 The Lax Model;87
5.2.9;2.2.9 Photoemission from (n, n) and (n, 0) Carbon Nanotubes;89
5.3;2.3 Results and Discussions;90
5.4;References;121
6;3 Fundamentals of Photoemission from Quantum Dots of Various Nonparabolic Materials;124
6.1;3.1 Introduction;124
6.2;3.2 Theoretical Background;125
6.2.1;3.2.1 Photoemission from Nonlinear Optical Materials;126
6.2.2;3.2.2 Photoemission from III--V Materials;127
6.2.2.1;3.2.2.1 The Three-Band Model of Kane;127
6.2.2.2;3.2.2.2 The Two-Band Model of Kane;128
6.2.2.3;3.2.2.3 The Model of Stillman et al.;129
6.2.2.4;3.2.2.4 The Model of Newson and Kurobe;130
6.2.2.5;3.2.2.5 The Model of Rossler;131
6.2.2.6;3.2.2.6 The Model of Palik et al.;133
6.2.2.7;3.2.2.7 The Model of Johnson and Dickey;134
6.2.2.8;3.2.2.8 The Model of Agafonov et al.;135
6.2.3;3.2.3 Photoemission from II--VI Materials;137
6.2.4;3.2.4 Photoemission from n-Gallium Phosphide;138
6.2.5;3.2.5 Photoemission from n-Germanium;139
6.2.6;3.2.6 Photoemission from Tellurium;141
6.2.7;3.2.7 Photoemission from Graphite;143
6.2.8;3.2.8 Photoemission from Platinum Antimonide;145
6.2.9;3.2.9 Photoemission from Zero-Gap Materials;146
6.2.10;3.2.10 Photoemission from Lead Germanium Telluride;148
6.2.11;3.2.11 Photoemission from Gallium Antimonide;149
6.2.12;3.2.12 Photoemission from Stressed Materials;154
6.2.13;3.2.13 Photoemission from Bismuth;155
6.2.13.1;3.2.13.1 The McClure and Choi Model;155
6.2.13.2;3.2.13.2 The Hybrid Model;156
6.2.13.3;3.2.13.3 The Cohen Model;157
6.2.13.4;3.2.13.4 The Lax Model;158
6.2.14;3.2.14 Photoemission from IV--VI Materials;159
6.2.15;3.2.15 Photoemission from II--V Materials;163
6.2.16;3.2.16 Photoemission from Zinc and Cadmium Diphosphides;164
6.2.17;3.2.17 Photoemission from Bismuth Telluride;166
6.2.18;3.2.18 Photoemission from Quantum Dots of Antimony;167
6.3;3.3 Results and Discussions;169
6.4;References;187
7;4 Photoemission from Quantum Confined Semiconductor Superlattices;190
7.1;4.1 Introduction;190
7.2;4.2 Theoretical Background;191
7.2.1;4.2.1 Magneto-photoemission from III0V Quantum Well Superlattices with Graded Interfaces graded interfaces ;191
7.2.2;4.2.2 Magneto-Photoemission from II0VI Quantum Well Superlattices with Graded Interfaces graded interfaces ;196
7.2.3;4.2.3 Magneto-Photoemission from IV--VI Quantum Well Superlattices with Graded Interfaces;198
7.2.4;4.2.4 Magneto-Photoemission from HgTe/CdTe Quantum Well Superlattices with Graded Interfaces;202
7.2.5;4.2.5 Magneto-Photoemission from III--V Quantum Well Effective Mass Superlattices;203
7.2.6;4.2.6 Magneto-Photoemission from II--VI Quantum Well Effective Mass Superlattices;205
7.2.7;4.2.7 Magneto-Photoemission from IV--VI Quantum Well Effective Mass Superlattices;208
7.2.8;4.2.8 Magneto-Photoemission from HgTe/CdTe Quantum Well Effective Mass Superlattices;210
7.2.9;4.2.9 Photoemission from III--V Quantum Dot Superlattices with Graded Interfaces;211
7.2.10;4.2.10 Photoemission from II--VI Quantum Dot Superlattices with Graded Interfaces;214
7.2.11;4.2.11 Photoemission from IV--VI Quantum Dot Superlattices with Graded Interfaces;215
7.2.12;4.2.12 Photoemission from HgTe/CdTe Quantum Dot Superlattices with Graded Interfaces;218
7.2.13;4.2.13 Photoemission from III--V Quantum Dot Effective Mass Superlattices;219
7.2.14;4.2.14 Photoemission from II--VI Quantum Dot Effective Mass Superlattices;220
7.2.15;4.2.15 Photoemission from IV--VI Quantum Dot Effective Mass Superlattices;221
7.2.16;4.2.16 Photoemission from HgTe/CdTe Quantum Dot Effective Mass Superlattices;222
7.3;4.3 Results and Discussions;223
7.4;References;234
8;5 Photoemission from Bulk Optoelectronic Materials;235
8.1;5.1 Introduction;235
8.2;5.2 Theoretical Background;235
8.3;5.3 Results and Discussions;242
8.4;5.4 Open Research Problems;249
8.5;References;251
9;6 Photoemission under Quantizing Magnetic Field from Optoelectronic Materials;252
9.1;6.1 Introduction;252
9.2;6.2 Theoretical Background;252
9.3;6.3 Results and Discussions;254
9.4;6.4 Open Research Problems;259
9.5;References;260
10;7 Photoemission from Quantum Wells in Ultrathin Films, Quantum Wires, and Dots of Optoelectronic Materials;261
10.1;7.1 Introduction;261
10.2;7.2 Theoretical Background;261
10.2.1;7.2.1 Photoemission from Quantum Wells in Ultrathin Films of Optoelectronic Materials;261
10.2.2;7.2.2 Photoemission from Quantum Well Wires of Optoelectronic Materials;264
10.2.3;7.2.3 Photoemission from Quantum Dots of Optoelectronic Materials;265
10.3;7.3 Results and Discussions;266
10.4;7.4 Open Research Problems;277
10.5;Reference;283
11;8 Photoemission from Quantum Confined Effective Mass Superlattices of Optoelectronic Materials;284
11.1;8.1 Introduction;284
11.2;8.2 Theoretical Background;284
11.2.1;8.2.1 Magneto-Photoemission from Quantum Well Effective Mass Superlattices;284
11.2.2;8.2.2 Photoemission from Effective Mass Quantum Well Wire Superlattices;288
11.2.3;8.2.3 Photoemission from Quantum Dots of Effective Mass Superlattices;289
11.2.4;8.2.4 Magneto-Photoemission from Effective Mass Superlattices;290
11.3;8.3 Results and Discussions;291
11.4;8.4 Open Research Problems;303
11.5;Reference;304
12;9 Photoemission from Quantum Confined Superlattices of Optoelectronic Materials with GradedInterfaces;305
12.1;9.1 Introduction;305
12.2;9.2 Theoretical Background;305
12.2.1;9.2.1 Magneto Photoemission from Quantum Well Superlattices;305
12.2.2;9.2.2 Photoemission from Quantum Well Wire Superlattices;310
12.2.3;9.2.3 Photoemission from Quantum Dot Superlattices;312
12.2.4;9.2.4 Magneto-Photoemission from Superlattices of III-V Optoelectronic Materials;313
12.3;9.3 Results and Discussions;313
12.4;9.4 Open Research Problems;325
12.5;Reference;326
13;10 Review of Experimental Results;327
13.1;10.1 Experimental Works;327
13.2;10.2 Open Research Problem;328
13.3;References;328
14;11 Conclusion and Future Research;329
14.1;11.1 Open Research Problems;329
15;Appendix AThe Numerical Values of the Energy BandConstants of a Few Materials;332
16;Subject Index;338
17;Materials Index;340