Buch, Englisch, 688 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 1266 g
Buch, Englisch, 688 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 1266 g
ISBN: 978-0-19-986122-4
Verlag: Oxford University Press
Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, Fabrication Engineering at the Micro- and Nanoscale, Fourth Edition, covers the entire basic unit processes used to fabricate integrated circuits and other devices.
With many worked examples and detailed illustrations, this engaging introduction provides the tools needed to understand the frontiers of fabrication processes.
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Weitere Infos & Material
- * = This section provides background material.
- ** = This section contains advanced material and can be omitted without loss of the basic content of the course.
- PART I. OVERVIEW AND MATERIALS
- Chapter 1. An Introduction to Microelectronic Fabrication
- 1.1 Microelectronic Technologies: A Simple Example
- 1.2 Unit Processes and Technologies
- 1.3 A Roadmap for the Course
- 1.4 Summary
- Chapter 2. Semiconductor Substrates
- 2.1 Phase Diagrams and Solid Solubility*
- 2.2 Crystallography and Crystal Structure*
- 2.3 Crystal Defects
- 2.4 Czochralski Growth
- 2.5 Bridgman Growth of GaAs
- 2.6 Float Zone and Other Growth
- 2.7 Wafer Preparation and Specifications
- 2.8 Summary and Future Trends
- Problems
- References
- PART II. UNIT PROCESSES I: HOT PROCESSING AND ION IMPLANTATION
- Chapter 3. Diffusion
- 3.1 Fick's Diffusion Equation in One Dimension
- 3.2 Atomistic Models of Diffusion
- 3.3 Analytic Solutions of Fick's Law
- 3.4 Diffusion Coefficients for Common Dopants
- 3.5 Analysis of Diffused Profiles
- 3.6 Diffusion in SiO
- 3.7 Simulations of Diffusion Profiles
- 3.8 Summary
- Problems
- References
- Chapter 4. Thermal Oxidation
- 4.1 The Deal-Grove Model of Oxidation
- 4.2 The Linear and Parabolic Rate Coefficients
- 4.3 The Initial Oxidation Regime
- 4.4 The Structure of SiO2
- 4.5 Oxide Characterization
- 4.6 The Effects of Dopants During Oxidation and Polysilicon Oxidation
- 4.7 Silicon Oxynitrides
- 4.8 Alternative Gate Insulators**
- 4.9 Oxidation Systems
- 4.10 Numeric Oxidations**
- 4.11 Summary
- Problems
- References
- Chapter 5. Ion Implantation
- 5.1 Idealized Ion Implantation Systems
- 5.2 Coulomb Scattering*
- 5.3 Vertical Projected Range
- 5.4 Channeling and Lateral Projected Range
- 5.5 Implantation Damage
- 5.6 Shallow Junction Formation**
- 5.7 Buried Dielectrics**
- 5.8 Ion Implantation Systems: Problems and Concerns
- 5.9 Numerical Implanted Profiles**
- 5.10 Summary
- Problems
- References
- Chapter 6. Rapid Thermal Processing
- 6.1 Gray Body Radiation, Heat Exchange, and Optical Absorption
- 6.2 High Intensity Optical Sources and Chamber Design
- 6.3 Temperature Measurement
- 6.4 Thermoplastic Stress*
- 6.5 Rapid Thermal Activation of Impurities
- 6.6 Rapid Thermal Processing of Dielectrics
- 6.7 Silicidation and Contact Formation
- 6.8 Alternative Rapid Thermal Processing Systems
- 6.9 Summary
- Problems
- References
- PART III. UNIT PROCESSES 2: PATTERN TRANSFER
- Chapter 7. Optical Lithography
- 7.1 Lithography Overview
- 7.2 Diffraction*
- 7.3 The Modulation Transfer Function and Optical Exposures
- 7.4 Source Systems and Spatial Coherence
- 7.5 Contact/Proximity Printers
- 7.6 Projection Printers
- 7.7 Advanced Mask Concepts**
- 7.8 Surface Reflections and Standing Waves
- 7.9 Alignment
- 7.10 Summary
- Problems
- References
- Chapter 8. Photoresists
- 8.1 Photoresist Types
- 8.2 Organic Materials and Polymers*
- 8.3 Typical Reactions of DQN Positive Photoresist
- 8.4 Contrast Curves
- 8.5 The Critical Modulation Transfer Function
- 8.6 Applying and Developing Photoresist
- 8.7 Second-Order Exposure Effects
- 8.8 Advanced Photoresists and Photoresist Processes**
- 8.9 Summary
- Problems
- References
- Chapter 9. Nonoptical Lithographic Techniques**
- 9.1 Interactions of High Energy Beams with Matter*
- 9.2 Direct-Write Electron Beam Lithography Systems
- 9.3 Direct-Write Electron Beam Lithography: Summary and Outlook
- 9.4 X-ray and EUV Sources*
- 9.5 Proximity X-ray Exposure Systems
- 9.6 Membrane Masks for Proximity X-ray
- 9.7 EUV Lithography
- 9.8 Projection Electron Beam Lithography (SCALPEL)
- 9.9 E-beam and X-ray Resists
- 9.10 Radiation Damage in MOS Devices
- 9.11 Soft Lithography and Nanoimprint Lithography
- 9.12 Summary
- Problems
- References
- Chapter 10. Vacuum Science and Plasmas
- 10.1 The Kinetic Theory of Gases*
- 10.2 Gas Flow and Conductance
- 10.3 Pressure Ranges and Vacuum Pumps
- 10.4 Vacuum Seals and Pressure Measurement
- 10.5 The DC Glow Discharge*
- 10.6 RF Discharges
- 10.7 High Density Plasmas
- 10.8 Summary
- Problems
- References
- Chapter 11. Etching
- 11.1 Wet Etching
- 11.2 Chemical Mechanical Polishing
- 11.3 Basic Regimes of Plasma Etching
- 11.4 High Pressure Plasma Etching
- 11.5 Ion Milling
- 11.6 Reactive Ion Etching
- 11.7 Damage in Reactive Ion Etching**
- 11.8 High Density Plasma (HDP) Etching
- 11.9 Liftoff
- 11.10 Summary
- Problems
- References
- PART IV. UNIT PROCESSES 3: THIN FILMS
- Chapter 12. Physical Deposition: Evaporation and Sputtering
- 12.1 Phase Diagrams: Sublimation and Evaporation*
- 12.2 Deposition Rates
- 12.3 Step Coverage
- 12.4 Evaporator Systems: Crucible Heating Techniques
- 12.5 Multicomponent Films
- 12.6 An Introduction to Sputtering
- 12.7 Physics of Sputtering*
- 12.8 Deposition Rate: Sputter Yield
- 12.9 High Density Plasma Sputtering
- 12.10 Morphology and Step Coverage
- 12.11 Sputtering Methods
- 12.12 Sputtering of Specific Materials
- 12.13 Stress in Deposited Layers
- 12.14 Summary
- Problems
- References
- Chapter 13. Chemical Vapor Deposition
- 13.1 A Simple CVD System for the Deposition of Silicon
- 13.2 Chemical Equilibrium and the Law of Mass Action*
- 13.3 Gas Flow and Boundary Layers*
- 13.4 Evaluation of the Simple CVD System
- 13.5 Atmospheric CVD of Dielectrics
- 13.6 Low Pressure CVD of Dielectrics and Semiconductors in Hot Wall Systems
- 13.7 Plasma-enhanced CVD of Dielectrics
- 13.8 Metal CVD**
- 13.9 Atomic Layer Deposition
- 13.10 Electroplating Copper
- 13.11 Summary
- Problems
- References
- Chapter 14. Epitaxial Growth
- 14.1 Wafer Cleaning and Native Oxide Removal
- 14.2 The Thermodynamics of Vapor Phase Growth
- 14.3 Surface Reactions
- 14.4 Dopant Incorporation
- 14.5 Defects in Epitaxial Growth
- 14.6 Selective Growth*
- 14.7 Halide Transport GaAs Vapor Phase Epitaxy
- 14.8 Incommensurate and Strained Layer Heteroepitaxy
- 14.9 Metal Organic Chemical Vapor Deposition (MOCVD)
- 14.10 Advanced Silicon Vapor Phase Epitaxial Growth Techniques
- 14.11 Molecular Beam Epitaxy Technology
- 14.12 BCF Theory**
- 14.13 Gas Source MBE and Chemical Beam Epitaxy**
- 14.14 Summary
- Problems
- References
- PART V. PROCESS INTEGRATION
- Chapter 15. Device Isolation, Contacts, and Metallization
- 15.1 Junction and Oxide Isolation
- 15.2 LOCOS Methods
- 15.3 Trench Isolation
- 15.4 Silicon-on-Insulator Isolation Techniques
- 15.5 Semi-insulating Substrates
- 15.6 Schottky Contacts
- 15.7 Implanted Ohmic Contacts
- 15.8 Alloyed Contacts
- 15.9 Multilevel Metallization
- 15.10 Planarization and Advanced Interconnect
- 15.11 Summary
- Problems
- References
- Chapter 16. CMOS Technologies
- 16.1 Basic Long-Channel Device Behavior
- 16.2 Early MOS Technologies
- 16.3 The Basic 3-µm Technology
- 16.4 Device Scaling
- 16.5 Hot Carrier Effects and Drain Engineering
- 16.6 Latchup
- 16.7 Shallow Source/Drains and Tailored Channel Doping
- 16.8 The Universal Curve and Advanced CMOS
- 16.9 A Nanoscale CMOS Process
- 16.10 Nonplanar CMOS
- 16.11 Summary
- Problems
- References
- Chapter 17. Other Transistor Technologies
- 17.1 Basic MESFET Operation
- 17.2 Basic MESFET Technology
- 17.3 Digital Technologies
- 17.4 MMIC Technologies
- 17.5 MODFETs
- 17.6 Review of Bipolar Devices: Ideal and Quasi-ideal Behavior
- 17.7 Performance of BJTs
- 17.8 Early Bipolar Processes
- 17.9 Advanced Bipolar Processes
- 17.10 BiCMOS
- 17.11 Thin Film Transistors
- 17.12 Summary
- Problems
- References
- Chapter 18. Optoelectronic and Solar Technologies
- 18.1 Optoelectronic Devices Overview
- 18.2 Direct-Gap Inorganic LEDs
- 18.3 Polymer/Organic Light-Emitting Diodes
- 18.4 Lasers
- 18.5 Photovoltaic Devices Overview
- 18.6 Silicon Based Photovoltaic Device Fabrication
- 18.7 Other Photovoltaic Technologies
- 18.8 Summary
- References
- Chapter 19. MEMS
- 19.1 Fundamentals of Mechanics
- 19.2 Stress in Thin Films
- 19.3 Mechanical-to-Electrical Transduction
- 19.4 Mechanics of Common MEMS Devices
- 19.5 Bulk Micromachining Etching Techniques
- 19.6 Bulk Micromachining Process Flow
- 19.7 Surface Micromachining Basics
- 19.8 Surface Micromachining Process Flow
- 19.9 MEMS Actuators
- 19.10 High Aspect Ratio Microsystems Technology (HARMST)
- 19.11 Microfluidics
- 19.12 Summary
- Problems
- References
- Appendix I. Acronyms and Common Symbols
- Appendix II. Properties of Selected Semiconductor Materials
- Appendix III. Physical Constants
- Appendix IV. Conversion Factors
- Appendix V. Some Properties of the Error Function
- Appendix VI. F Values
- Index
