E-Book, Englisch, Band Volume 13, 434 Seiten, Web PDF
Cohen / Gildenblat / Einspruch Metal - Semiconductor Contacts and Devices
1. Auflage 1986
ISBN: 978-1-4832-1779-6
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, Band Volume 13, 434 Seiten, Web PDF
Reihe: VLSI Electronics Microstructure Science
ISBN: 978-1-4832-1779-6
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;Metal – Semiconductor Contacts and Devices;4
3;Copyright Page;5
4;Table of Contents;6
5;Dedication;5
6;Preface;10
7;Chapter 1. Introduction;12
7.1;REFERENCES;17
8;Chapter 2. Electrical Characteristics of the Metal – Semiconductor Interface;19
8.1;2.1. INTRODUCTION;19
8.2;2.2. THE INTERFACE BARRIER AND SPACE CHARGE REGION;20
8.3;2.3. GENERALIZED TRANSPORT THEORY AT LOW DOPANT LEVELS;29
8.4;2.4. TUNNELING ACROSS THE INTERFACE;41
8.5;2.5. MINORITY CARRIER INJECTION RATIO;46
8.6;REFERENCES;56
9;Chapter 3. Experimental Methods of Barrier Height Determination;58
9.1;3.1. INTRODUCTION;58
9.2;3.2. THE FORWARD BIAS l–V METHOD;59
9.3;3.3. FORWARD BIAS l–V METHOD FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE;65
9.4;3.4. THE CAPACITANCE–VOLTAGE METHOD;70
9.5;3.5. THE CORRELATION BETWEEN THE BARRIER HEIGHT AND THE IDEALITY FACTOR OF THE SCHOTTKY DIODE;79
9.6;3.6. REVERSE BIAS CURRENT–VOLTAGE CHARACTERISTICS;82
9.7;3.7. THE PHOTOEXCITATION METHOD;89
9.8;REFERENCES;95
10;Chapter 4. Test Structures for Ohmic Contact Characterization;98
10.1;4.1. INTRODUCTION;98
10.2;4.2. SIMPLE METHODS FOR CONTACT RESISTANCE MEASUREMENTS;100
10.3;4.3. TRANSFER LENGTH METHOD;108
10.4;4.4. THE CIRCULAR TRANSMISSION LINE MODEL;122
10.5;4.5. FINITE DEPTH EFFECTS;128
10.6;4.6. THE FOUR-TERMINAL RESISTOR;131
10.7;REFERENCES;143
11;Chapter 5. Contact Fabrication Procedures;145
11.1;5.1. INTRODUCTION;145
11.2;5.2. BASIC ELEMENTS OF IC DEVICE PROCESSING;146
11.3;5.3. THE CHEMISTRY OF CONTACT HOLE OPENING;157
11.4;5.4. CONTACT GEOMETRY;166
11.5;5.5. METAL DEPOSITION TECHNIQUES;184
11.6;5.6. CONTACT METALLIZATION DEFINITION TECHNIQUES;194
11.7;5.7. DETAILS OF SHALLOW JUNCTION FORMATION;202
11.8;REFERENCES;220
12;Chapter 6. Practical Ohmic Contacts to Silicon;224
12.1;6.1. INTRODUCTION;224
12.2;6.2. REQUIREMENTS ON OHMIC CONTACTS FOR VLSI;225
12.3;6.3. METALLURGICAL CONSIDERATIONS;230
12.4;6.4. CONTACT ELECTROMIGRATION;250
12.5;6.5. ALUMINUM-BASED CONTACT METALLIZATIONS;255
12.6;6.6. SILICIDE CONTACT METALLIZATION;272
12.7;6.7. REFRACTORY METAL CONTACTS TO SILICON;302
12.8;6.8. OTHER METAL–SILICON SYSTEMS;314
12.9;REFERENCES;318
13;Chapter 7. Other Metal – Semiconductor Contact Systems;322
13.1;7.1. INTRODUCTION;322
13.2;7.2. OHMIC CONTACTS TO III – V COMPOUND SEMICONDUCTORS;323
13.3;7.3. POLYSILICON EMITTER CONTACTS;344
13.4;REFERENCES;359
14;Chapter 8. Metal – Semiconductor Devices;362
14.1;8.1. INTRODUCTION;362
14.2;8.2. SCHOTTKY BARRIER MOS TRANSISTORS;362
14.3;8.3. SCHOTTKY DIODES IN BIPOLAR INTEGRATED CIRCUITS;377
14.4;8.4. THE METAL–SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;398
14.5;REFERENCES;420
15;Appendix I: Modified Bessel Functions;425
16;Appendix II: Thin-Film Resistors;427
17;Appendix III: Physical Properties of Common Semiconductor Materials;430
18;Appendix IV: Selected Properties of Commonly Used Metals;431
19;Index;432
