Cullen / Kaldis / Parker Vapour Growth and Epitaxy

Proceedings of the Third International Conference on Vapour Growth and Epitaxy, Amsterdam, The Netherlands, 18-21 August 1975
1. Auflage 2013
ISBN: 978-1-4832-2357-5
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 410 Seiten, Web PDF

Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.

Autoren/Hrsg.

Cullen, G. W.

Kaldis, E.

Parker, R. L.

Inhaltsverzeichnis

1;Front Cover;1
2;Vapour Growth and Epitaxy;4
3;Copyright Page;3
4;Table of Contents;10
5;PREFACE;8
6;SECTION I: GROWTH OF SINGLE CRYSTALS FROM THE VAPOUR PHASE;12
6.1;CHAPTER 1. CRYSTAL GROWTH FROM THE VAPOUR PHASE: CONFRONTATION OF THEORY WITH EXPERIMENT;14
6.1.1;1. Introduction;14
6.1.2;2. Statistical step and surface models;15
6.1.3;3. Continuous step growth models;19
6.1.4;4. Experimental confrontation;22
6.1.5;References;29
6.2;CHAPTER 2. FUNDAMENTAL ASPECTS OF VLS GROWTH;31
6.2.1;1. Introduction;31
6.2.2;2. Kinetics of whisker growth;31
6.2.3;3. Rate-determining step;35
6.2.4;4. Role of the liquid phase;37
6.2.5;5. The VLS mechanism as a general phenomenon in vapor crystal growth;39
6.2.6;6. Conclusions;40
6.2.7;Acknowledgments;40
6.2.8;References;40
6.3;CHAPTER 3. COMPLEXES IN THE VAPOUR PHASE AND THEIR IMPLICATIONS FOR VAPOUR GROWTH;42
6.3.1;1. Introduction;42
6.3.2;2. Dimeric chloride molecules (homeocomplexes);43
6.3.3;4. Larger heterocomplexes;43
6.3.4;5. Gas complexes as reactants;45
6.3.5;References;45
6.4;CHAPTER 4. CRYSTAL GROWTH AND TRANSPORT RATES OF GeSe AND GeTe IN MICRO-GRAVITY ENVIRONMENT;47
6.4.1;1. Introduction;47
6.4.2;2. Experimental procedures on Skylab;47
6.4.3;3. Results and discussion;48
6.4.4;4. Conclusions;54
6.4.5;Acknowledgements;54
6.4.6;References;54
6.5;CHAPTER 5. STRUCTURE OF AUTOEPITAXIAL DIAMOND FILMS;55
6.5.1;1. Introduction;55
6.5.2;2. Experimental technique;55
6.5.3;3. Discussion;57
6.5.4;Acknowledgement;58
6.5.5;References;59
6.6;CHAPTER 6. DARSTELLUNG VON VO2-EINKRISTALLEN DER OBEREN UND UNTEREN PHASENGRENZE DURCH CHEMISCHEN TRANSPORT;60
6.6.1;1. Einleitung;60
6.6.2;2. Der Transport von VO2 mit TeCl4 um 1000°C;61
6.6.3;3. Zum Transport von VO2 mit TeCI4 unterhalb 700°C;63
6.6.4;4. Der Transport von V02 mit HCl;65
6.6.5;5. Schlussfolgerungen;65
6.6.6;Literatur;65
6.7;CHAPTER 7. THE MORPHOLOGY OF Zn3P2 SINGLE CRYSTALS GROWN FROM THE VAPOUR PHASE;67
6.7.1;1. Introduction;67
6.7.2;2. Experimental procedure;67
6.7.3;3. Results and discussion;68
6.7.4;Acknowledgment;70
6.7.5;References;70
6.8;CHAPTER 8. MORPHOLOGY OF CHEMICAL VAPOR DEPOSITED TITANIUM DIBORIDE;71
6.8.1;1. Introduction;71
6.8.2;2. Experimental procedure;71
6.8.3;3. Results;72
6.8.4;4. Discussion;75
6.8.5;Acknowledgements;76
6.8.6;References;76
6.9;CHAPTER 9. A MODEL FOR THE GROWTH OF ANOMALOUS POLYTYPE STRUCTURES IN VAPOUR GROWN SiC;77
6.9.1;1. Introduction;77
6.9.2;2. The most probable fault configurations;78
6.9.3;3. Deduction of the most probable series of structures;80
6.9.4;4. Discussion of results;81
6.9.5;Acknowledgement;81
6.9.6;References;81
6.10;CHAPTER 10. EPITAXIAL GROWTH OF a-SiC LAYERS BY CHEMICAL VAPOR DEPOSITION TECHNIQUE;83
6.10.1;1. Introduction;83
6.10.2;2. Experimental procedures;83
6.10.3;3. Results and discussion;84
6.10.4;Acknowledgments;86
6.10.5;References;86
7;SFXTION II: NUCLEATION AND KINETICS;88
7.1;CHAPTER 11. HOMOGENEOUS NUCLEATION IN A FREE ARGON JET; OBSERVATION OF CLUSTERS BY ELECTRON DIFFRACTION;90
7.1.1;1. Introduction;90
7.1.2;2. Homogeneous nucleation in a free jet;90
7.1.3;3. Electron diffraction;94
7.1.4;4. Thermodynamic state of the clusters;96
7.1.5;Acknowledgements;96
7.1.6;References;96
7.2;CHAPTER 12. THERMODYNAMICS AND KINETICS OF THE FIRST MONOLAYER ADSORPTION OF XENON ON THE (0001) GRAPHITE FACE;98
7.2.1;1. Introduction;98
7.2.2;2. Thermodynamic properties of xenon adsorbed on graphite;98
7.2.3;3. Kinetics;98
7.2.4;4. Interpretation;101
7.2.5;References;102
7.3;CHAPTER 13. MODIFICATIONS OF EPITAXY IN EVAPORATED FILMS BY ELECTRIC CHARGE EFFECTS;103
7.3.1;1. Introduction;103
7.3.2;2. Experimental procedure;103
7.3.3;3. Experimental results;104
7.3.4;4. Discussion;107
7.3.5;References;108
7.4;CHAPTER 14. DECOMPOSITION OF METHANE ON A HOT CARBON SURFACE AFTER MULTIPLE COLLISIONS;109
7.4.1;1. Introduction;109
7.4.2;2. Experiment and results;109
7.4.3;4. Application of the models to the experimental results;110
7.4.4;5. Conclusions;111
7.4.5;Acknowledgement;111
7.4.6;References;111
7.5;CHAPTER 15. FORMATION AND PROPERTIES OF TRANSITION LAYERS IN EPITAXIAL FILMS;114
7.5.1;1. Introduction;114
7.5.2;2. Formation of a transition layer under a substrate influence;115
7.5.3;3. Transition layers caused by peculiarities of growth processes;117
7.5.4;4. Transition layers caused by changes in the initial vapour phase;119
7.5.5;5. Ways to diminish transition layers;121
7.5.6;References;122
7.6;CHAPTER 16. EPITAXY IN SOLAR CELLS;124
7.6.1;1. Introduction;124
7.6.2;2. Solar cells are semiconductor diodes;124
7.6.3;3. Applications of epitaxial growth;127
7.6.4;4. Conclusion;131
7.6.5;Acknowledgments;131
7.6.6;References;131
7.7;CHAPTER 17. KINETIC STUDIES OF THE GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR BEAM TECHNIQUES;133
7.7.1;1. Introduction;133
7.7.2;2. Experimental methods in modulated molecular beam studies of surface kinetics;133
7.7.3;3. Results and kinetic models from the application of modulated beam techniques to the study of surface processes in the growth of III—V compounds;135
7.7.4;4. Conclusions;140
7.7.5;References;140
7.8;CHAPTER 18. KINETIC ASPECTS IN THE VAPOUR PHASE EPITAXY OF III-V COMPOUNDS;141
7.8.1;1. Introduction;141
7.8.2;2. Thermodynamic analyses;142
7.8.3;3. Kinetic data;143
7.8.4;4. Models and mechanisms;148
7.8.5;References;151
7.9;CHAPTER 19. A THEORETICAL TREATMENT OF GaAs GROWTH BY VAPOUR PHASE TRANSPORT FOR {001} ORIENTATION;153
7.9.1;1. Introduction;153
7.9.2;2. Rate processes;153
7.9.3;3. Theoretical results;154
7.9.4;4. Discussion;156
7.9.5;Acknowledgements;157
7.9.6;References;157
7.10;CHAPTER 20. HETEROEPITAXIAL GROWTH OF GaP ON SILICON;158
7.10.1;1. Introduction;158
7.10.2;2. Experimental;158
7.10.3;3. Results and discussion;159
7.10.4;4. Summary;167
7.11;CHAPTER 21. EPITAXIAL GROWTH ON OPTICAL GRATINGS FOR DISTRIBUTED FEEDBACK GaAs INJECTION LASERS;169
7.11.1;1. Introduction;169
7.11.2;2. Experimental;170
7.11.3;3. Results;171
7.11.4;4. Conclusions;174
7.11.5;Acknowledgments;175
7.11.6;References;175
7.12;CHAPTER 22. GROWTH AND CHARACTERIZATION OF GaAs1 AND GaAsx1 _.P.;176
7.12.1;1. Introduction;176
7.12.2;2. Experimental;176
7.12.3;3. Results and discussion;177
7.12.4;4. Conclusions;181
7.12.5;Acknowledgements;182
7.12.6;References;182
7.13;CHAPTER 23. DEVICE QUALITY EPITAXIAL GALLIUM ARSENIDE GROWN BY THE METAL ALKYL-HYDRIDE TECHNIQUE;183
7.13.1;1. Introduction;183
7.13.2;2. Experimental technique;183
7.13.3;3. Growth conditions, growth rates and surface morphology;184
7.13.4;4. Electrical properties of undoped layers;185
7.13.5;5. n-Type doping;186
7.13.6;6. Multilayer structures for Schottky barrier GaAs FET's;187
7.13.7;7. p-Type doping;187
7.13.8;8. Discussion;188
7.13.9;Acknowledgements;188
7.13.10;References;189
7.14;CHAPTER 24. RATE DETERMINING PROCESSES OF GASEOUS TRANSPORT IN A Ga-As-Cl CLOSED TUBE SYSTEM;190
7.14.1;1. Introduction;190
7.14.2;2. Theoretical consideration;190
7.14.3;3. Comparison with experiments and discussion;192
7.14.4;Acknowledgements;193
7.14.5;References;193
7.15;CHAPTER 25. DOPING BEHAVIOR OF SILICON IN VAPOR-GROWN III-V EPITAXIAL FILMS;194
7.15.1;1. Introduction;194
7.15.2;2. Experimental;196
7.15.3;3. Results;196
7.15.4;4. Discussion;197
7.15.5;5. Conclusion;200
7.15.6;Acknowledgments;200
7.15.7;References;200
7.16;CHAPTER 26. MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM PHOSPHIDE;201
7.16.1;1. Introduction;201
7.16.2;2. Experimental;201
7.16.3;3. Results;203
7.16.4;4. Multilayered structures;204
7.16.5;5. Discussion;206
7.16.6;6. Summary;206
7.16.7;Acknowledgements;207
7.16.8;References;207
7.17;CHAPTER 27. HIGH PRESSURE SOLUTION GROWTH OF GaN+;208
7.17.1;1. Introduction;208
7.17.2;2. Apparatus and procedures;209
7.17.3;3. Results and discussion;210
7.17.4;4. Conclusion;213
7.17.5;Acknowledgments;213
7.17.6;References;213
7.18;CHAPTER 28. ÉPITAXIE EN PHASE LIQUIDE DES COMPOSÉS III-V SUR SUBSTRAT InP;215
7.18.1;1. Introduction;215
7.18.2;2. Resultats;215
7.18.3;3. Conclusion;219
7.18.4;Remerciements;220
7.18.5;Bibliographie;220
7.19;CHAPTER 29. ON THE KINETICS OF NITROGEN INCORPORATION IN GaP LPE LAYERS USING NH3 VAPOUR DOPING;221
7.19.1;1. Introduction;221
7.19.2;2. Experimental;221
7.19.3;3. Results;222
7.19.4;4. Discussion;223
7.19.5;5. Conclusions;224
7.19.6;Acknowledgement;225
7.19.7;References;225
7.20;CHAPTER 30. NEARLY PERFECT CRYSTAL GROWTH OF III-V COMPOUNDS BY THE TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOUR PRESSURE;226
7.20.1;1. Introduction;226
7.20.2;2. Experiment;226
7.20.3;3. Results;227
7.20.4;4. Discussion and conclusion;232
7.20.5;Acknowledgements;233
7.20.6;References;233
7.21;CHAPTER 31. INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS;234
7.21.1;1. Introduction;234
7.21.2;2. Microstructural effects of lattice mismatch;234
7.21.3;3. Macrostructural effects of lattice mismatch;244
7.21.4;4. Device effects of lattice mismatch;247
7.21.5;5. Conclusions;249
7.21.6;Acknowledgments;249
7.21.7;References;249
7.22;CHAPTER 32. CHARACTERIZATION OF THE INTERFACE REGION IN VPE GaAs;251
7.22.1;1. Introduction;251
7.22.2;2. Experimental techniques;251
7.22.3;3. Experimental results;252
7.22.4;4. Discussion;253
7.22.5;5. Conclusions;254
7.22.6;Acknowledgements;254
7.22.7;References;254
7.23;CHAPTER 33. CHARACTERIZATION OF DEFECTS IN GaP and GaAsP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON MICROSCOPY;255
7.23.1;1. Introduction;255
7.23.2;2. Graded heterojunctions GaAs1_xPx;255
7.23.3;3. Defects in GaP;257
7.23.4;Acknowledgements;260
7.23.5;References;260
7.24;CHAPTER 34. CHARACTERIZATION OF VAPOR GROWN (001) GaAs1_xPx LAYERS BY SELECTIVE PHOTO-ETCHING;261
7.24.1;1. Introduction;261
7.24.2;2. Materials and etching procedure;261
7.24.3;3. Results;262
7.24.4;Acknowledgements;266
7.24.5;References;266
7.25;CHAPTER 35. EQUILIBRIUM AND KINETICS IN THE CHEMICAL VAPOUR DEPOSITION OF SILICON;267
7.25.1;1. Introduction;267
7.25.2;2. Equilibrium considerations;267
7.25.3;3. Input concentrations;268
7.25.4;4. Kinetic considerations;269
7.25.5;5. Examples;270
7.25.6;6. Doping;270
7.25.7;7. Conclusion;272
7.25.8;References;273
7.26;CHAPTER 36. INELASTIC LIGHT SCATTERING STUDIES OF SILICON CHEMICAL VAPOR DEPOSITION (CVD) SYSTEMS;275
7.26.1;1. Introduction;275
7.26.2;2. Inelastic light scattering processes;276
7.26.3;3. Experimental apparatus and procedures;277
7.26.4;4. Results and discussion;279
7.26.5;5. Conclusions;283
7.26.6;Acknowledgements;283
7.26.7;References;283
7.27;CHAPTER 37. THE EFFECT OF RAPID EARLY GROWTH ON THE PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON;285
7.27.1;1. Introduction;285
7.27.2;2. Experimental procedure;285
7.27.3;3. Results;288
7.27.4;4. Discussion;292
7.27.5;5. Conclusions;294
7.27.6;Acknowledgments;294
7.27.7;References;294
7.28;CHAPTER 38. THE CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR DEPOSITION OF SILICON FROM SiCl4;295
7.28.1;1. Introduction;295
7.28.2;2. Experimental and results;295
7.28.3;Acknowledgements;299
7.28.4;References;299
7.29;CHAPTER 39. ANISOTROPY IN THE GROWTH RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE;301
7.29.1;1. Introduction;301
7.29.2;2. Experimental procedure;302
7.29.3;3. Results and discussion;302
7.29.4;4. Conclusions;309
7.29.5;References;309
7.30;CHAPTER 40. GROWTH AND ETCHING OF SILICON IN CHEMICAL VAPOUR DEPOSITION SYSTEMS; THE INFLUENCE OF THERMAL DIFFUSION AND TEMPERATURE GRADIENT;310
7.30.1;1. Introduction;310
7.30.2;2. The equilibrium composition as a function of PsiCl4 (in Put);310
7.30.3;3. Conclusion;316
7.30.4;Acknowledgement;317
7.30.5;References;318
7.31;CHAPTER 41. CONTROL OF SLIP IN HORIZONTAL SILICON EPITAXY WITH PROFILED SUSCEPTORS;319
7.31.1;1. Introduction;319
7.31.2;2. Principles of design;319
7.31.3;References;322
7.32;CHAPTER 42. SELECTIVE ETCHING AND EPITAXIAL REFILLING OF SILICON WELLS IN THE SYSTEM SiH4/HCl/H2;323
7.32.1;1. Introduction;323
7.32.2;2. Experimental, results;323
7.32.3;3. Discussion;326
7.32.4;Acknowledgement;327
7.32.5;References;327
7.33;CHAPTER 43. THE INCORPORATION OF PHOSPHORUS IN SILICON; THE TEMPERATURE DEPENDENCE OF THE SEGREGATION COEFFICIENT;328
7.33.1;1. Introduction, justification of equilibrium model;328
7.33.2;2. Analysis;329
7.33.3;3. Comparison with theoretical expressions;331
7.33.4;4. Conclusion;332
7.33.5;References;332
7.34;CHAPTER 44. VAPOUR PHASE EPITAXY OF II-VI COMPOUNDS: A REVIEW;334
7.34.1;1. Introduction;334
7.34.2;2. Epitaxy techniques and trends;334
7.34.3;3. Layer growth and epitaxy;336
7.34.4;4. Crystal structure;340
7.34.5;5. Physical properties;341
7.34.6;6. Conclusion;343
7.34.7;Acknowledgements;343
7.34.8;References;343
7.35;CHAPTER 45. SYNTHESIS AND EPITAXIAL GROWTH OF CdTe FILMS BY NEUTRAL AND IONIZED BEAMS;344
7.35.1;1. Introduction;344
7.35.2;2. Experimental apparatus and procedure;344
7.35.3;3. Experimental results and discussion;346
7.35.4;4. Epitaxy of CdTe films on NaCl cleavage faces;348
7.35.5;5. Conclusion;349
7.35.6;References;349
7.36;CHAPTER 46. THE EPITAXIAL GROWTH OF THICK SMOOTH FILMS OF ZnS ON GaAs;350
7.36.1;1. Introduction;350
7.36.2;2. Growth procedure;350
7.36.3;3. Growth characteristics;351
7.36.4;4. The effect of growth conditions on the Si concentration in the layers;354
7.36.5;5. Discussion;355
7.36.6;6. Conclusion;355
7.36.7;Acknowledgements;355
7.36.8;References;355
7.37;CHAPTER 47. GROWTH MECHANISM AND STRUCTURE OF ADSORBED LAYERS ON METALS;356
7.37.1;1. Introduction;356
7.37.2;2. Coincidence mesh structures;356
7.37.3;3. Structure with no coincidence mesh (epitaxy of lead on gold);360
7.37.4;References;363
7.38;CHAPTER 48. EPITAXIAL GROWTH IN THE (111)Ag/Cu AND (111)Au/Cu SYSTEMS;364
7.38.1;1. Introduction;364
7.38.2;2. Results;364
7.38.3;3. Discussion;367
7.38.4;Acknowledgement;368
7.38.5;References;368
7.39;CHAPTER 49. LIQUID PHASE EPITAXY OF MAGNETIC GARNETS;369
7.39.1;1. Introduction;369
7.39.2;2. Background;369
7.39.3;3. Design of magnetic bubble film compositions;370
7.39.4;4. Fluxed-melts for LPE garnet films;371
7.39.5;5. Garnet LPE;372
7.39.6;6. Future;375
7.39.7;Acknowledgements;375
7.39.8;References;375
7.40;CHAPTER 50. LPE GROWTH OF YLaTm AND YLaEu GARNET FILMS;377
7.40.1;1. Introduction;377
7.40.2;2. Experimental;377
7.40.3;3. Results;378
7.40.4;4. Growth kinetics;380
7.40.5;5. Discussion;380
7.40.6;6. Conclusions;381
7.40.7;Acknowledgments;381
7.40.8;References;381
7.41;CHAPTER 51. NEW FLUX SYSTEMS FOR THE LPE GROWTH OF THIN GARNET FILMS;382
7.41.1;1. Introduction;382
7.41.2;2. The flux requirements;382
7.41.3;3. Film growth;383
7.41.4;4. Results and discussion;384
7.41.5;5. Conclusions;385
7.41.6;Acknowledgements;385
7.41.7;References;385
7.42;CHAPTER 52. A NEW METHOD OF STIRRING FOR LPE GROWTH;386
7.42.1;1. Introduction;386
7.42.2;2. Design criteria;387
7.42.3;3. Apparatus;388
7.42.4;4. Results and discussion;389
7.42.5;5. Conclusions;390
7.42.6;References;390
7.43;CHAPTER 53. THERMALLY ACTIVATED STRESS RELIEF IN GARNET LAYERS GROWN BY LIQUID PHASE EPITAXY;391
7.43.1;1. Introduction;391
7.43.2;2. Experimental details;391
7.43.3;3. Results;392
7.43.4;4. Discussion;396
7.43.5;5. Conclusions;397
7.43.6;Acknowledgements;397
7.43.7;References;397
7.44;CHAPTER 54. SECONDARY ION MASS SPECTROMETRY OF COMPOSITIONAL CHANGES IN GARNET FILMS;398
7.44.1;1. Introduction;398
7.44.2;2. Experimental;398
7.44.3;3. Results and discussion;400
7.44.4;4. Conclusion;402
7.44.5;Acknowledgements;402
7.44.6;References;402
8;AUTHOR INDEX;404