Einspruch / Bauer Surface and Interface Effects in VLSI

1. Auflage 2014
ISBN: 978-1-4832-1776-5
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 10, 396 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), 'Ohmic' contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Autoren/Hrsg.

Einspruch, Norman G.

Bauer, Robert S.

Inhaltsverzeichnis

1;Front Cover;1
2;Surface and Interface Effects in VLSI;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Part A: Introduction;14
7.1;Chapter 1. Interfaces and Devices;16
7.1.1;I. INTRODUCTION;16
7.1.2;II. ELECTRICAL PROPERTIES OF INTERFACES;18
7.1.3;III. STRUCTURE OF INTERFACES;25
7.1.4;IV. REPRODUCIBILITY AND STABILITY;31
7.1.5;V. SUMMARY AND PROGNOSIS;33
7.1.6;ACKNOWLEDGMENT;34
7.1.7;REFERENCES;34
8;Part B: Structure;40
8.1;Chapter 2. Characterization ofthe Si – SiO2 Interface;42
8.1.1;I. INTRODUCTION;43
8.1.2;II. HISTORICAL BACKGROUND;44
8.1.3;III. OXIDATION AND DIFFUSION;49
8.1.4;IV. INTERFACE MORPHOLOGY;55
8.1.5;V. INTERFACE TRAPS;61
8.1.6;VI. THEORETICAL MODELS;79
8.1.7;VII. CONCLUSIONS;83
8.1.8;ACKNOWLEDGMENTS;83
8.1.9;REFERENCES;83
8.2;Chapter 3. Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits;92
8.2.1;I. INTRODUCTION;93
8.2.2;II. NEW EXPERIMENTAL TECHNIQUES TO STUDY SURFACES AND INTERFACES ON AN ATOMIC SCALE: SYNCHROTRON RADIATION;94
8.2.3;III. STRATEGY USED IN THIS WORK;98
8.2.4;IV. THE UNIFIED DEFECT MODEL FOR III-V INTERFACES AND ITS ORIGIN;99
8.2.5;V. Ill–V TERNARY AND QUATERNARY ALLOYS;106
8.2.6;VII. OHMIC CONTACTS;114
8.2.7;VIII. CHEMISTRY AND INTERMIXING AT III – V SEMICONDUCTOR–METAL INTERFACES;117
8.2.8;IX. OTHER APPLICATIONS TO VLSI DEVICES;122
8.2.9;X. SUMMARY AND CONCLUSIONS;127
8.2.10;ACKNOWLEDGMENTS;127
8.2.11;REFERENCES;128
9;Part C: Electronic Properties;132
9.1;Chapter 4. Heterostructure Device Physics: Band Discontinuities as Device Design Parameters;134
9.1.1;I. INTRODUCTION: WHY HETEROSTRUCTURES?;134
9.1.2;II. BAND OFFSETS;138
9.1.3;III. BAND BENDING AND SPACE CHARGE LAYERS AT ABRUPT HETEROJUNCTIONS;153
9.1.4;IV. THE HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT): A DEVICE EXAMPLE;169
9.1.5;REFERENCES;177
9.2;Chapter 5. Interface Constraints on MESFET and MISFET Architectures;180
9.2.1;I. INTRODUCTION;181
9.2.2;II. MODELS FOR FET;182
9.2.3;III. SURFACES AND INTERFACES;185
9.2.4;IV. METAL–SEMICONDUCTOR INTERFACES;186
9.2.5;V. CHEMICAL REACTIONS BETWEEN METALS AND III–V COMPOUNDS;187
9.2.6;VI. THE GaAs SCHOTTKY BARRIER;189
9.2.7;VII. CHANNEL–SUBSTRATE INTERFACE;198
9.2.8;VIII. OHMIC CONTACTS;206
9.2.9;IX. DIELECTRIC III–V COMPOUND SEMICONDUCTOR INTERFACES;210
9.2.10;X. SURFACE AND INTERFACIAL PROPERTIES OF TERNARY AND QUATERNARY III–V ALLOYS;233
9.2.11;XI. INSTABILITIES IN MISFET;237
9.2.12;XII. AFTERTHOUGHTS;238
9.2.13;REFERENCES;242
9.3;Chapter 6. The Role of Boundary Conditions in Near- and Submicrometer-Length Gallium Arsenide Structures;250
9.3.1;I. INTRODUCTION;250
9.3.2;II. TRANSPORT THROUGH MOMENT OF THE BOLTZMANN TRANSPORT EQUATION;253
9.3.3;III. SOLUTION OF THE GOVERNING EQUATIONS;258
9.3.4;IV. Conclusions;329
9.3.5;ACKNOWLEDGMENTS;330
9.3.6;REFERENCES;330
9.3.7;APPENDIX. DIMENSIONLESS EQUATIONS USED IN THE NUMERICAL SIMULATIONS;330
9.4;Chapter 7. Carrier Transport at the Si – SiO2 Interface;336
9.4.1;List of Symbols;337
9.4.2;I. INTRODUCTION;338
9.4.3;II. SCALING;339
9.4.4;III. CARRIER VELOCITY MEASUREMENTS;342
9.4.5;IV. A MODEL FOR ELECTRON VELOCITY IN SILICON;353
9.4.6;V. CHARGE PACKET TRANSPORT AND BROADENING;363
9.4.7;REFERENCES;373
10;Index;376
11;Contents of Other Volumes;390