Einspruch / Brown Plasma Processing for VLSI

1. Auflage 2014
ISBN: 978-1-4832-1775-8
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 8, 544 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Autoren/Hrsg.

Einspruch, Norman G.

Brown, Dale M.

Inhaltsverzeichnis

1;Front Cover;1
2;Plasma Processing for
VLSI;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;12
6;Preface;14
7;Chapter 1. The History of Plasma Processing;18
7.1;I. INTRODUCTION;19
7.2;II. EARLY DEVELOPMENTS;19
7.3;III. INTRODUCTION OF PLASMA PROCESSING TO
SEMICONDUCTOR MANUFACTURING, 1971-1978;22
7.4;IV. FULL-SCALE COMMITMENT TO DRY-PROCESS
TECHNOLOGY, 1978-1983;29
7.5;V. CHALLENGES AND OPPORTUNITIES FOR PLASMA
TECHNOLOGY, 1983-1988;35
7.6;REFERENCES;41
8;Part A: Deposition;42
8.1;Chapter 2. Sputtering for VLSI;44
8.1.1;I. INTRODUCTION;44
8.1.2;II. CONTACT METALLIZATION;45
8.1.3;III. DIFFUSION BARRIERS;47
8.1.4;IV. SCHOTTKY DIODE METALLIZATION;51
8.1.5;V. COSPUTTERED ALUMINUM ALLOYS;52
8.1.6;VI. REFRACTORY SILICIDES IN GATE METALLIZATION;54
8.1.7;VII. FILM STRESS;58
8.1.8;VIII. DIELECTRICS;61
8.1.9;IX. DIE ATTACH;64
8.1.10;X. SUMMARY AND FUTURE DIRECTIONS;65
8.1.11;REFERENCES;68
8.2;Chapter 3. Plasma-Enhanced Chemical Vapor Deposition of Transition Metalsand Transition Metal
Suicides;72
8.2.1;I. INTRODUCTION;72
8.2.2;II. PLASMA-ENHANCED DEPOSITION;73
8.2.3;III. SUMMARY;84
8.2.4;ACKNOWLEDGMENTS;84
8.2.5;REFERENCES;84
8.3;Chapter 4. Plasma-Enhanced Chemical Vapor Deposition
of Dielectrics;86
8.3.1;1. INTRODUCTION;86
8.3.2;II. GENERAL PRINCIPLES;88
8.3.3;III. SPECIFIC MATERIALS;92
8.3.4;IV. EQUIPMENT FOR PECVD OF INORGANIC DIELECTRICS;102
8.3.5;V. SUMMARY;104
8.3.6;REFERENCES;104
9;Part B: Lithography;106
9.1;Chapter 5. Trilayer Resist;108
9.1.1;I. INTRODUCTION;108
9.1.2;II. PLASMA PROCESSING;114
9.1.3;III. LIMITATIONS OF SINGLE-LAYER RESIST;115
9.1.4;IV. FORMATION OF THE PROCESS ETCH MASK;125
9.1.5;V. UTILIZATION OF THE PROCESS MASK;144
9.1.6;VI. OPTIONS TO TRILAYER RESIST;148
9.1.7;VII. SUMMARY;150
9.1.8;ACKNOWLEDGMENTS;151
9.1.9;REFERENCES;151
9.2;Chapter 6. Plasma Sources
for X-Ray Lithography;154
9.2.1;I. INTRODUCTION;154
9.2.2;II. X-RAY LITHOGRAPHY;157
9.2.3;III. X-RAY SOURCE REQUIREMENTS;160
9.2.4;IV. ELECTRON-IMPACT X-RAY SOURCES;163
9.2.5;V. SYNCHROTRON X-RADIATION SOURCES;164
9.2.6;VI. PLASMA X-RAY SOURCES;165
9.2.7;VII. CONCLUSION;179
9.2.8;APPENDIX. X-RAY SOURCE CHARACTERIZATION;181
9.2.9;ACKNOWLEDGMENTS;183
9.2.10;REFERENCES;183
9.3;Chapter 7. Plasma Sources
for Deep-UV Lithography;188
9.3.1;I. INTRODUCTION;188
9.3.2;II. GENERAL REQUIREMENTS FOR DEEP-UV
LITHOGRAPHIC SOURCES;189
9.3.3;III. DESCRIPTION OF SOURCES;194
9.3.4;IV. CONCLUSIONS;201
9.3.5;REFERENCES;202
10;Part C: Etching;204
10.1;Chapter 8. Basic Principles of Plasma Etching
for Silicon Devices;206
10.1.1;I. INTRODUCTION;207
10.1.2;II. PRINCIPLE OF ISOTROPIC AND ANISOTROPIC ETCHING;220
10.1.3;III. PLASMA AND SURFACE CHEMISTRY;228
10.1.4;IV. SELECTIVITY IN PLASMA ETCHING;231
10.1.5;V. ETCHING IN PLASMAS THAT PRODUCE FREE FLUORINE;235
10.1.6;VI. ETCHING OF ORGANIC MATERIAL IN OXYGEN-BASED
PLASMAS;247
10.1.7;VII. ETCHING IN PLASMAS THAT PRODUCE
FLUOROCARBON RADICALS;249
10.1.8;VIII. ETCHING IN PLASMAS THAT PRODUCE CHLORINE AND
BROMINE ATOMS;253
10.1.9;IX. HYDROGEN PLASMA ETCHING;262
10.1.10;ACKNOWLEDGMENT;263
10.1.11;REFERENCES;263
10.2;Chapter 9. High-Pressure Etching;270
10.2.1;NOMENCLATURE;270
10.2.2;I. INTRODUCTION;271
10.2.3;II. EQUIPMENT;277
10.2.4;III. PLASMA PROPERTIES;282
10.2.5;IV. PROCESSES FOR SPECIFIC MATERIALS;301
10.2.6;V. CONCLUSIONS;310
10.2.7;ACKNOWLEDGMENTS;311
10.2.8;REFERENCES;311
10.3;Chapter 10. Reactive Ion Etching;314
10.3.1;I. INTRODUCTION;315
10.3.2;II. GENERAL PRINCIPLES;316
10.3.3;III. PROCESS PARAMETER EFFECTS;319
10.3.4;IV. SPECIFIC MATERIALS AND STRUCTURES;325
10.3.5;V. EQUIPMENT CONSIDERATIONS;347
10.3.6;VI. SUMMARY;351
10.3.7;ACKNOWLEDGMENTS;352
10.3.8;REFERENCES;352
10.4;Chapter 11. Ion-Beam Etching (Milling;358
10.4.1;I. INTRODUCTION;358
10.4.2;II. PHYSICS OF ION-BEAM ETCHING;362
10.4.3;III. TECHNIQUES AND PROBLEMS OF ION-BEAM ETCHING;369
10.4.4;IV. APPLICATIONS;376
10.4.5;V. ION-BEAM ETCH EQUIPMENT;378
10.4.6;VI. SUMMARY AND CONCLUSIONS;380
10.4.7;ACKNOWLEDGMENTS;380
10.4.8;REFERENCES;380
10.5;Chapter 12. Reactive Ion-Beam Etching;382
10.5.1;I. INTRODUCTION;382
10.5.2;II. ION SOURCES AND OPERATION;385
10.5.3;III. APPLICATIONS;394
10.5.4;IV. CHEMISTRY AND PHYSICS OF ETCHING REACTIONS;414
10.5.5;V. SUMMARY AND CONCLUSIONS;424
10.5.6;ACKNOWLEDGMENTS;425
10.5.7;REFERENCES;425
10.6;Chapter 13. Plasma Diagnostics and End-Point
Detection;428
10.6.1;I. INTRODUCTION;428
10.6.2;II. MEASUREMENT TECHNIQUES;430
10.6.3;III. PLASMA PARAMETERS;446
10.6.4;IV. END-POINT DETECTION;451
10.6.5;V. SUMMARY;459
10.6.6;ACKNOWLEDGMENT;460
10.6.7;REFERENCES;460
10.7;Chapter 14. Emerging Etching Techniques;464
10.7.1;I. INTRODUCTION;465
10.7.2;II. HIGH-RATE REACTIVE ION ETCHING USING A
MAGNETRON DISCHARGE;465
10.7.3;III. GATE-OXIDE BREAKDOWN;483
10.7.4;IV. ATOMIC AND MOLECULAR BEAM ETCHING;487
10.7.5;V. UV-LIGHT IRRADIATION ETCHING;492
10.7.6;ACKNOWLEDGMENTS;502
10.7.7;REFERENCES;502
10.8;Chapter I5. Advanced Device Structures Fabricated with Anisotropie Dry
Etching;504
10.8.1;I. INTRODUCTION;504
10.8.2;II. BASIC APPROACHES;506
10.8.3;III. DEVICE COMPONENTS;507
10.8.4;IV. APPLICATIONS;520
10.8.5;V. CONCLUSIONS;523
10.8.6;REFERENCES;523
11;Index;526
12;Contents of Other Volumes;540