Einspruch / Cohen / Gildenblat VLSI Metallization

1. Auflage 2014
ISBN: 978-1-4832-1781-9
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 15, 490 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.

Autoren/Hrsg.

Einspruch, Norman G.

Cohen, Simon S.

Gildenblat, Gennady Sh.

Inhaltsverzeichnis

1;Front Cover;1
2;VLSI Metallization;4
3;Copyright Page;5
4;Table of Contents;6
5;Preface;10
6;Chapter 1. Electrical Properties of Thin Conducting Films;12
6.1;I. INTRODUCTION;12
6.2;II. THE PHYSICS OF TRANSPORT PHENOMENA IN THIN FILMS;15
6.3;III. ELECTROMIGRATION IN THIN METAL LINES;36
6.4;IV. THE INTERCONNECT IMPEDANCE;38
6.5;V. TEST STRUCTURES;47
6.6;REFERENCES;49
7;Chapter 2. Metallurgical Properties of Thin Conducting Films;52
7.1;I. INTRODUCTION;52
7.2;II. THEORETICAL BACKGROUND ON THIN-FILM PROPERTIES;54
7.3;III. METALLURGICAL PROPERTIES OF THIN FILMS;79
7.4;IV. SUMMARY AND FUTURE TRENDS;106
7.5;ACKNOWLEDGMENT;106
7.6;REFERENCES;106
8;Chapter 3. Metallization Techniques;112
8.1;I. GENERAL CONSIDERATIONS;112
8.2;II. DEPOSITION TECHNIQUES;118
8.3;REFERENCES;164
9;Chapter 4. Methods of Metal Patterning and Etching;170
9.1;I. INTRODUCTION;170
9.2;II. LITHOGRAPHY;172
9.3;III. METAL ETCHING;190
9.4;IV. SUMMARY;224
9.5;ACKNOWLEDGMENTS;224
9.6;REFERENCES;224
10;Chapter 5. Gate Metallization;232
10.1;I. INTRODUCTION;232
10.2;II. CHOICE OF GATE MATERIALS;234
10.3;III. METAL GATE ELECTRODES;239
10.4;IV. POLYSILICON AND SILICIDE GATE ELECTRODES;240
10.5;V. TRANSPARENT CONDUCTING ELECTRODES;249
10.6;VI. CONCLUDING REMARKS;251
10.7;ACKNOWLEDGMENTS;252
10.8;REFERENCES;252
10.9;ADDITIONAL READING;255
11;Chapter 6. Contact Metallization;258
11.1;I. INTRODUCTION;258
11.2;II. SPECIFIC CONTACT RESISTANCE;260
11.3;II. THE IMPACT OF SERIES RESISTANCE ON THE DEVICE PERFORMANCE;263
11.4;IV. SCALING OF CONTACT RESISTANCE;267
11.5;V. SHALLOW JUNCTIONS;272
11.6;VI. CONTACT FABRICATION PROCEDURES;278
11.7;VII. OHMIC CONTACTS TO SILICON;288
11.8;APPENDIX;295
11.9;ACKNOWLEDGMENTS;296
11.10;REFERENCES;296
12;Chapter 7. Multilevel Metallization Schemes;304
12.1;I. INTRODUCTION;304
12.2;II. NEED FOR MULTILEVEL METALLIZATION;305
12.3;III. HISTORICAL PERSPECTIVE;306
12.4;IV. MULTILEVEL METALLIZATION ISSUES;308
12.5;V. MATERIALS USED FOR MULTILEVEL METALLIZATION SCHEMES;310
12.6;VI. CONDUCTOR SYSTEMS;312
12.7;VII. DIELECTRIC SYSTEMS;316
12.8;VIII. PLANARIZATION AND VIA TECHNOLOGIES;321
12.9;IX. YIELD, RELIABILITY, AND OTHER ISSUES;339
12.10;X. CONCLUDING REMARKS;347
12.11;ACKNOWLEDGMENTS;347
12.12;References;347
13;Chapter 8. Electromigration in Interconnects and Contacts;356
13.1;I. INTRODUCTION;356
13.2;II. BACKGROUND;359
13.3;III. MEASUREMENT TECHNIQUES;370
13.4;IV. THE DESIGN OF RELIABLE DEVICES;385
13.5;V. FUTURE PERSPECTIVES;399
13.6;ACKNOWLEDGMENT;400
13.7;REFERENCES;400
14;Chapter 9. Metallization Technology for GaAs Integrated Circuits;404
14.1;I. INTRODUCTION;405
14.2;II. GaAs INTEGRATED CIRCUIT METALLIZATION DESIGN CONSIDERATIONS;406
14.3;III. GaAs CONTACT AND INTERCONNECT SYSTEMS;413
14.4;IV. METALLIZATION FABRICATION TECHNOLOGY FOR GaAs;438
14.5;V. YIELD AND RELIABILITY;449
14.6;VI. FUTURE TRENDS;457
14.7;ACKNOWLEDGMENT;459
14.8;REFERENCES;459
15;Chapter 10. Interconnections, Dissipation, and Computation;462
15.1;I. INTRODUCTION;462
15.2;II. INTERCONNECTIONS IN VLSI;464
15.3;III. OFF-CHIP INTERCONNECTIONS;469
15.4;IV. DISSIPATION AND COMPUTATION;472
15.5;V. CONCLUSIONS;482
15.6;ACKNOWLEDGMENTS;482
15.7;REFERENCES;482
16;Index;484