Einspruch / Cohen / Singh Beam Processing Technologies

1. Auflage 2014
ISBN: 978-1-4832-1785-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 21, 558 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

Beam Processing Technologies is a collection of papers that deals with the miniaturization of devices that will be faster, consume less power, and cost less per operation or fabrication. One paper discusses metal oxide semiconductor (MOS) integrated circuit technology including the operation of devices whose lateral and vertical dimensions are scaled down. If the devices' silicon doping profiles are increased by the same scale factor, they can operate on lower voltages and currents, with the same performance. Another paper describes laser beam processing and wafer-scale integration as techniques to increase the number of devices on a silicon chip. Electron beam technologies can be used in many fabrication processes such as in microlithography, selective oxidation, doping, metrology. Ion beam applications depend on the presence of the ion introduced into the device (e.g. implantation doping), on pseudoelastic collisions (e.g. physical sputtering or crystal damage), and on inelastic scattering (e.g. polymer resist exposure). Silicon molecular beam epitaxy (SiMBE) can also grow high-quality layers at low temperature, particularly concerning germanium, especially as reagrds the growth system design and utilization of n- and p-type doping. Chemical beam epitaxy (CBE) is another epitaxial growth technique that can surpass MBE and metal organic chemical vapor deposition (MO-CVD). The collection is suitable chemical engineers, industrial physicists, and researchers whose work involve micro-fabrication and development of integrated circuits.

Autoren/Hrsg.

Einspruch, Norman G.

Cohen, S. S.

Singh, Raj N.

Inhaltsverzeichnis

1;Front Cover;1
2;Beam Processing Technologies;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Chapter 1. Trends in MOS Integrated Circuit Technology;14
7.1;I. Historical Perspective;14
7.2;II. Device Scaling;15
7.3;III. Trends in FET Design;16
7.4;IV. Isolation;18
7.5;V. Lithography;20
7.6;VI. Ion Implantation;21
7.7;VII. Dielectrics;21
7.8;VIII. Interconnect;22
7.9;IX. Contacts;23
7.10;X. Reliability;24
7.11;XI. BiCMOS;25
7.12;XII. Memory Technology;26
7.13;XIII. The Future;27
7.14;Acknowledgment;27
7.15;References;27
8;Chapter 2. Laser Beam Processing and Wafer-Scale Integration;32
8.1;I. Introduction;32
8.2;II. Theoretical Considerations;36
8.3;III. Results for the LIDL Process;69
8.4;IV. Laser Beam Processing in IC Repair and Customization;97
8.5;Acknowledgments;121
8.6;References;121
9;Chapter 3. Electron Beam Processing;126
9.1;I. Introduction;126
9.2;II. Interaction of Electrons with Matter;127
9.3;III. Components for Electron Beam Machines;140
9.4;IV. Multibeam E-Beam Machines;154
9.5;V. Applications Involving Low Electron Energies;160
9.6;VI. Chemical Processing;163
9.7;References;168
10;Chapter 4. Ion Beam Techniques and Applications;170
10.1;I. Introduction;170
10.2;II. Sources for Broad-Area Ion Beams;172
10.3;III. Sources for Submicrometer Beams;175
10.4;IV. Parallel Processing with Broad-Area Beams;182
10.5;V. Serial Processing with Finely Focused Beams;191
10.6;VI. Summary;215
10.7;Acknowledgment;216
10.8;References;216
11;Chapter 5. Silicon Molecular Beam Epitaxy: Capabilities and Trends;220
11.1;I. Introduction;221
11.2;II. Si MBE Technology;221
11.3;III. Growth Mechanisms and Surface Preparation;227
11.4;IV. Silicon Doping;234
11.5;V. Polycrystalline Silicon;248
11.6;VI. Application of Si MBE;250
11.7;VII. Conclusion;262
11.8;Acknowledgments;263
11.9;References;263
12;Chapter 6. Chemical Beam Epitaxy;268
12.1;I. Introduction;269
12.2;II. CBE System Design;273
12.3;III. Substrate Preparation for Growth;286
12.4;IV. Growth Kinetics of CBE;287
12.5;V. Quality of Epilayers;319
12.6;VI. Growth of Epilayers Using Group Alkyls;336
12.7;VII. GalnAs/InP and GaAs/AlGaAs Quantum Wells and Superlattices;337
12.8;VIII. Doping Control;346
12.9;IX. Device Applications;354
12.10;X. Concluding Remarks;366
12.11;References;366
13;Chapter 7. Ion Implantation for VLSI;372
13.1;I. Introduction;373
13.2;II. Commercal Ion Implanters;374
13.3;III. Ion Beam Production and Acceleration;382
13.4;IV. Implantation Physics;398
13.5;V. Problems Associated with Ion Implantation;407
13.6;VI. Endstation Design;424
13.7;VII. Ion Implanter System Design;438
13.8;References;448
14;Chapter 8. Incoherent Radiation and Its Applications (Visible, UV, X rays);452
14.1;I. Introduction;453
14.2;II. Pattern Replication;455
14.3;III. Optical Imaging;462
14.4;IV. Photolithographic Tools;468
14.5;V. Deep-UV Lithography;476
14.6;VI. X-ray Lithography;480
14.7;VII. Thermal Processing with Incoherent Radiation;485
14.8;VIII. Conclusion;488
14.9;Acknowledgments;488
14.10;References;488
15;Chapter 9. Electron Beam Testing: An Outline of Techniques;490
15.1;I. Introduction;490
15.2;II. Introduction to the Scanning Electron Microscope;492
15.3;III. Qualitative Voltage Contrast;496
15.4;IV. Voltage Contrast Linearization for Potential Measurements;498
15.5;V. Estimate of Minimum Measurable Voltage;514
15.6;VI. Observation of Fast Voltage Waveforms and Dynamic Voltage Distributions Using a Pulsed Beam Probe;520
15.7;VII. Electron Beam Pulsing in the Electron-Optical Column;522
15.8;VIII. Stroboscopic and Sampling Mode Operation;534
15.9;IX. Other Modes with Synchronous and Asynchronous Pulsed Beams;538
15.10;X. Summary;541
15.11;References;542
16;Index;544