Einspruch / Larrabee Materials and Process Characterization

1. Auflage 2014
ISBN: 978-1-4832-1773-4
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 6, 614 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

Autoren/Hrsg.

Einspruch, Norman G.

Larrabee, Graydon B.

Inhaltsverzeichnis

1;Front Cover;1
2;Materials and Process Characterization;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Chapter 1. Characterization of Silicon Materials for VLSI;14
7.1;I. INTRODUCTION;15
7.2;II. CHARACTERIZATION TECHNIQUES;22
7.3;III. POLYCRYSTALLINE SILICON;47
7.4;IV. SINGLE-CRYSTAL SILICON;51
7.5;V. SLICE PREPARATION;55
7.6;VI. SUMMARY;61
7.7;APPENDIX. PROPERTIES OF 54 ELEMENTS IN SINGLE-CRYSTAL SILICON;61
7.8;REFERENCES;84
8;Chapter 2. Characterization of Silicon Expitaxial Films;86
8.1;I. INTRODUCTION;87
8.2;II. EPITAXIAL-GROWTH PROCESS;89
8.3;III. ELECTRICAL CHARACTERIZATION;102
8.4;IV. PHYSICAL AND OPTICAL CHARACTERIZATION;120
8.5;V. EPITAXIAL-DEFECT CHARACTERIZATION;136
8.6;VI. EPITAXIAL-DEFECT MEASUREMENTS;144
8.7;VII. SUMMARY;151
8.8;ACKNOWLEDGMENTS;152
8.9;REFERENCES;152
9;Chapter 3. Characterization of Dielectric Films;160
9.1;I. INTRODUCTION AND BACKGROUND;160
9.2;II. BASIC STRUCTURE AND PROPERTIES OF GATE DIELECTRICS;165
9.3;III. THE CLASSIFICATION OF DIELECTRIC CHARGES;174
9.4;IV. THE SPATIAL LOCATION OF OXIDE CHARGE;181
9.5;V. THE AMOUNT AND ENERGY LOCATION OF INTERFACE TRAPS;189
9.6;VI. TEMPERATURE EFFECTS ON MOBILE IONIC CHARGE;197
9.7;VII. INJECTED CHARGE TRAPPING IN OXIDE FILMS;208
9.8;VIII. THE ROLE OF DIELECTRIC LAYER CHARACTERIZATION IN VLSI;217
9.9;ACKNOWLEDGMENT;225
9.10;REFERENCES;225
10;Chapter 4. The Status of Dry-Developed Resists for Each Lithographic Technology;230
10.1;I. INTRODUCTION;230
10.2;II. THE TOTAL DRY PROCESS;231
10.3;III. ABLATIVE RESISTS;232
10.4;IV. PHOTORESIST ANALOGS;233
10.5;V. X-RAY RESIST ANALOGS;237
10.6;VI. ELECTRON RESIST ANALOGS;253
10.7;VII. ION-BEAM RESIST ANALOGS;260
10.8;VIII. CONCLUSIONS;264
10.9;ACKNOWLEDGMENTS;265
10.10;REFERENCES;265
11;Chapter 5. Microlithography in Semiconductor Device Processing;268
11.1;I. INTRODUCTION;269
11.2;II. PATTERN GENERATION;273
11.3;III. PHOTOMASK FABRICATION;288
11.4;IV. WAFER RESIST PATTERNING;305
11.5;V. SUMMARY AND CONCLUSIONS;337
11.6;ACKNOWLEDGMENTS;340
11.7;REFERENCES;340
12;Chapter 6. Formation and Characterization of Transition-Metal Silicides;342
12.1;I. INTRODUCTION;343
12.2;II. FORMATION AND CHARACTERIZATION;350
12.3;III. SILICIDE TRANSFORMATIONS;393
12.4;IV. PROPERTIES OF SILICIDES;403
12.5;APPENDIX. SILICIDE TABLES;411
12.6;ACKNOWLEDGMENTS;472
12.7;REFERENCES;472
13;Chapter 7. Materials Characterization for Ion Implantation;478
13.1;I. INTRODUCTION;479
13.2;II. TECHNIQUES;480
13.3;III. APPLICATIONS;493
13.4;IV. SUMMARY;506
13.5;ACKNOWLEDGMENTS;508
13.6;REFERENCES;508
14;Chapter 8. Surface Characterization For VLSI;510
14.1;I. INTRODUCTION;510
14.2;II. TECHNIQUES OF SURFACE ANALYSIS;514
14.3;III. APPLICATIONS TO PROCESS FLOW;523
14.4;IV. FUTURE TRENDS AND NEEDS;532
14.5;REFERENCES;536
15;Chapter 9. Microelectronic Test Chips for VLSI Electronics;542
15.1;I. HISTORICAL PERSPECTIVE;542
15.2;II. INTRODUCTION;548
15.3;III. TYPES OF TEST STRUCTURES;551
15.4;IV. TEST-CHIP ORGANIZATION AND TEST-STRUCTURE DESIGN;570
15.5;V. TEST-CHIP TESTERS AND ADVANCED TEST STRUCTURES;578
15.6;VI. FUTURE DIRECTIONS;582
15.7;APPENDIX;585
15.8;ACKNOWLEDGMENTS;587
15.9;REFERENCES;587
16;Index;590
17;Contents of Other Volumes;612