Einspruch VLSI Electronics Microstructure Science

1. Auflage 2014
ISBN: 978-1-4832-1774-1
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 7, 414 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.

Autoren/Hrsg.

Einspruch, Norman G.

Inhaltsverzeichnis

1;Front Cover;1
2;VLSI Electronics Microstructure Science;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Chapter 1. Advanced Manufacturing Equipment for VLSI Lithography;14
7.1;I. INTRODUCTION;15
7.2;II. THE NATURE OF THE LITHOGRAPHIC PROCESS;18
7.3;III. OPTICAL LITHOGRAPHY;30
7.4;IV. ELECTRON-BEAM MICROLITHOGRAPHY;34
7.5;V. X-RAY LITHOGRAPHY;37
7.6;VI. HYBRID LITHOGRAPHY;38
7.7;VII. UPDATED POSITION;38
7.8;VIII. OTHER CONSIDERATIONS;43
7.9;IX. FUTURE MICROLITHOGRAPHIC SYSTEMS AND THEIR RELATION TO THE FACTORY OF THE FUTURE;47
7.10;X. SUMMARY AND CONCLUSION;48
7.11;ACKNOWLEDGMENTS;49
7.12;REFERENCES;49
8;Chapter 2. Scaled MOS and Bipolar Technologies for VLSI;52
8.1;I. INTRODUCTION;53
8.2;II. GENERIC PROCESSES FOR MOS AND BIPOLAR VLSI;66
8.3;III. MOS SCALING AND TECHNOLOGY IMPLEMENTATION;87
8.4;IV. BIPOLAR SCALING AND TECHNOLOGY IMPLEMENTATION;113
8.5;V. CONCLUSION;136
8.6;ACKNOWLEDGMENTS;137
8.7;REFERENCES;137
9;Chapter 3. Laser Direct Writing for VLSI;142
9.1;I. INTRODUCTION;142
9.2;II. INSTRUMENTATION FOR LASER DIRECT WRITING;146
9.3;III. LASER ETCHING;148
9.4;IV. LASER DEPOSITION;154
9.5;V. LASER DOPING;160
9.6;VI. APPLICATIONS;162
9.7;VII. SUMMARY AND FUTURE DIRECTIONS;173
9.8;ACKNOWLEDGMENTS;175
9.9;REFERENCES;175
10;Chapter 4. Ultrathin-Gate Dielectric Processes for VLSI Applications;178
10.1;I. INTRODUCTION;179
10.2;II. GROWTH OF THIN OXIDES;179
10.3;III. CHARACTERISTICS AND CHARACTERIZATION OF THIN OXIDES;181
10.4;IV. PROCESS-RELATED ISSUES;189
10.5;V. THIN OXIDES RELATED TO DEVICES;195
10.6;VI. CASE FOR ALTERNATIVE DIELECTRICS;206
10.7;REFERENCES;207
11;Chapter 5. Limits to Improvement of Silicon Integrated Circuits;210
11.1;I. PREFATORY REMARKS;212
11.2;II. INTRODUCTION;215
11.3;III. PHYSICAL LIMITS;219
11.4;IV. TECHNOLOGICAL LIMITS;226
11.5;V. COMPLEXITY LIMITS;257
11.6;VI. SUMMARY;268
11.7;ACKNOWLEDGMENTS;269
11.8;REFERENCES;269
12;Chapter 6. Noise in VLSI;274
12.1;I. INTRODUCTION;275
12.2;II. NOISE SOURCES IN VLSI;275
12.3;III. NOISE OUTPUT OF VLSI BUILDING BLOCKS;279
12.4;IV. CROSS TALK;297
12.5;V. a-PARTICLE- AND COSMIC-RAY-INDUCED SOFT ERRORS IN VLSI CIRCUITS;302
12.6;VI. SCALING;311
12.7;REFERENCES;314
13;Chapter 7. VLSI Computer Arithmetic for Real-Time Image Processing;316
13.1;I. INTRODUCTION;316
13.2;II. VLSI ARITHMETIC MODULES;320
13.3;III. PARTITIONED MATRIX ALGORITHMS;323
13.4;IV. PIPELINED MATRIX PROCESSORS;330
13.5;V. REAL-TIME IMAGE PROCESSING;337
13.6;VI. CONCLUSIONS;342
13.7;REFERENCES;343
14;Chapter 8. Impact of VLSI on Artificial Intelligence;346
14.1;I. INTRODUCTION;346
14.2;II. PRESENT-DAY CAPABILITIES;350
14.3;III. DATA- AND KNOWLEDGE-BASED SYSTEMS;352
14.4;IV. ARCHITECTURAL TRENDS;358
14.5;V. LIKELY IMPACT OF VLSI ON AI SYSTEMS;360
14.6;VI. SUMMARY AND ASSESSMENT;364
14.7;ACKNOWLEDGMENTS;366
14.8;REFERENCES;366
15;Chapter 9. Integrated Superconducting Electronics;368
15.1;I. INTRODUCTION;368
15.2;II. ORIGIN OF TECHNOLOGY;371
15.3;III. DIGITAL DEVICES;379
15.4;IV. STRUCTURE AND FABRICATION;384
15.5;V. SPEED CONSIDERATIONS;386
15.6;VI. SUMMARY AND DISCUSSION;392
15.7;ACKNOWLEDGMENTS;394
15.8;REFERENCES;394
16;Index;396
17;Contents of Other Volumes;410