Einspruch VLSI Electronics

Microstructure Science
1. Auflage 2014
ISBN: 978-1-4832-1769-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 2, 350 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics

Autoren/Hrsg.

Einspruch, Norman G.

Inhaltsverzeichnis

1;Front Cover;1
2;VLSI Electronics Microstructure Science;4
3;Copyright Page;5
4;Table of Contents;8
5;List of Contributors;12
6;Preface;14
7;Contents of Other Volumes;16
8;Chapter 1. Dry Processing for Fabrication of VLSI Devices;18
8.1;I. INTRODUCTION;19
8.2;II. OUTLINE OF DRY ETCHING TECHNIQUES AND EQUIPMENT;28
8.3;III. SPECIFIC MATERIALS;39
8.4;IV. SUMMARY;48
8.5;REFERENCES;50
9;Chapter 2. Materials Characterization for VLSI;54
9.1;I. INTRODUCTION;54
9.2;II. CHEMICAL ANALYSIS;56
9.3;III. IMAGING;70
9.4;IV. PHYSICAL DEFECT CHARACTERIZATION;71
9.5;V. ELECTRICAL/FUNCTIONAL PROPERTIES;78
9.6;VI. VLSI CHARACTERIZATION TECHNOLOGY NEEDS;80
9.7;ACKNOWLEDGMENT;81
9.8;REFERENCES;81
10;Chapter 3. Physics and Modeling of Submicron Insulated-Gate Field-Effect Transistors. II;84
10.1;I. INTRODUCTION;85
10.2;II. REVIEW OF SCATTERING MECHANISMS;88
10.3;III. THE SILICON SURFACE SYSTEM;100
10.4;IV. GENERAL CONCLUSIONS;117
10.5;REFERENCES;118
11;Chapter 4. Impact of Submicron Technologyon Microwave and Millimeter-Wave Devices;122
11.1;I. INTRODUCTION;123
11.2;II. CHARGE TRANSPORT IN SEMICONDUCTORS;124
11.3;III. TRANSISTOR STRUCTURES;129
11.4;IV. TWO-TERMINAL DEVICES;141
11.5;V. MICROWAVE DEVICES MADE POSSIBLE BY SUBMICRON TECHNOLOGY;153
11.6;VI. DISCUSSION AND CONCLUSIONS;158
11.7;REFERENCES;160
12;Chapter 5. Microfabrication and Basic Research;166
12.1;I. INTRODUCTION;166
12.2;II. HISTORICAL PERSPECTIVE;168
12.3;III. MICROFABRICATION AND BASIC RESEARCH TODAY;177
12.4;IV. FUTURE DIRECTIONS OF BASIC RESEARCH;184
12.5;REFERENCES;185
13;Chapter 6. Impact of VLSI on Medicine;188
13.1;I. INTRODUCTION;188
13.2;II. HEALTH CARE DELIVERY SYSTEMS;189
13.3;III. COMPUTERIZED SCANNING AND NUCLEAR X-RAY TECHNIQUES;194
13.4;IV. PROSTHETIC AND ORTHOTIC DEVICES;198
13.5;V. THE HEMODIALYZER: THE ARTIFICIAL KIDNEY;200
13.6;VI. COMPUTER-BASED BIOFEEDBACK SYSTEMS;203
13.7;REFERENCES;204
14;Chapter 7. Signal Processing Using MOS-VLSI Technology;206
14.1;I. INTRODUCTION;206
14.2;II. SURVEY OF SIGNAL PROCESSING ICs;209
14.3;III. SCALING;215
14.4;IV. IMPLICATIONS OF SCALING;219
14.5;V. ANALOG SIGNAL PROCESSING;226
14.6;VI. CONCLUSIONS;242
14.7;REFERENCES;243
15;Chapter 8. The Impact of VLSI on Military Systems: A Supplier's Viewpoint;246
15.1;I. INTRODUCTION—STANDING AT THE THRESHOLD;246
15.2;II. THE DOD'S NEEDS: ELECTRONIC ISSUES;257
15.3;III. VHSIC—ROADMAP FOR SUCCESS;275
15.4;IV. THE VLSI ENVIRONMENT;282
15.5;ACKNOWLEDGMENT;288
16;Chapter 9. The Impact of VLSI on the Automobile of Tomorrow;290
16.1;I. INTRODUCTION;291
16.2;II. HISTORICAL REVIEW OF AUTOMOTIVE ELECTRONICS;291
16.3;III. PROBLEMS FACING AUTOMOTIVE ELECTRONICS;297
16.4;IV. The Potential Impact of VLSI on the Automobile;301
16.5;V. RUTS IN THE ROAD TO VLSI;310
16.6;REFERENCE;315
17;Chapter 10. Very Large Scale Protection for VLSI?;316
17.1;I. A LOOK AT PATENTS—PAST AND PRESENT;317
17.2;II. PATENTS—LICENSING AND LITIGATION;320
17.3;III. COSTS OF OBTAINING PATENTS AND PATENT ACQUISITION STRATEGIES;321
17.4;IV. PATENTS AS A STIMULUS TO RESEARCH AND INVENTION;322
17.5;V. PATENTS AND THE SEMICONDUCTOR INDUSTRY—VLSI;323
17.6;VI. PROTECTION FOR VLSI TECHNOLOGY;326
17.7;VII. VLSI PATENTS;327
17.8;VIII. VLSI COPYRIGHTS;330
17.9;IX. VLSI TRADE SECRET PROTECTION;331
17.10;X. THE LAW OF UNFAIR COMPETITION;331
17.11;XI. CONCLUSION, SUMMARY, AND GUIDELINES FOR THE FUTURE;335
17.12;REFERENCES;337
18;Index;338