Einspruch VLSI Electronics

Microstructure Science
1. Auflage 2014
ISBN: 978-1-4832-1770-3
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 3, 468 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics: Microstructure Science, Volume 3 evaluates trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the impact of VLSI on computer architectures; VLSI design and design aid requirements; and design, fabrication, and performance of CCD imagers. The approaches, potential, and progress of ultra-high-speed GaAs VLSI; computer modeling of MOSFETs; and numerical physics of micron-length and submicron-length semiconductor devices are also elaborated. This text likewise covers the optical linewidth measurements on photomasks and wafers and effects of materials technology and fabrication tolerances on guided-wave optical communication and signal processing. This volume is recommended for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.

Autoren/Hrsg.

Einspruch, Norman G.

Inhaltsverzeichnis

1;Front Cover;1
2;VLSI Electronics: Microstructure Science;4
3;Copyright Page;5
4;Table of Contents;8
5;List of Contributors;12
6;Preface;14
7;Chapter 1. Impact of VLSI on Computer Architectures;16
7.1;I. Introduction;17
7.2;II. Single-Chip Computers;21
7.3;III. Special-Purpose VLSI Chips;28
7.4;IV. Conclusion;37
7.5;References;37
8;Chapter 2. VLSI Design and Design Aid Requirements Charles House and Kent Hardage;40
8.1;I. Introduction;40
8.2;II. State-of-the-Art versus Workhorse Technologies;41
8.3;III. Designer Goals in Workhorse Technologies;43
8.4;IV. Next-Generation Requirements;45
8.5;V. The Problem and the Approach;46
8.6;VI. The Future;71
8.7;Acknowledgments;78
8.8;References;78
8.9;Additional References;79
9;Chapter 3 Design, Fabrication, and Performance of CCD Imagers;80
9.1;I. Introduction;80
9.2;II. Silicon CCD Imagers with Intrinsic Photoresponse;85
9.3;III. PtSi–Silicon Schottky-Barrier Infrared Image Sensors;115
9.4;IV. Other Infrared Imagers;115
9.5;V. Prospects for the Future;116
9.6;Acknowledgments;119
9.7;References;119
10;Chapter 4 Ultra-High-Speed GaAs VLSI: Approaches, Potential, and Progress;124
10.1;I. Introduction;125
10.2;II. GaAs Device Approaches for Ultra-High-Speed VLSI;126
10.3;III. Yield Analysis and Implications for VLSI Design;139
10.4;IV. The Schottky Diode-FET Logic Circuit Approach for Ultra-High-Speed GaAs VLSI;147
10.5;V. Planar GaAs LSI/VLSI Fabrication Technology;151
10.6;VI. Experimental Performance Results for Planar SDFL LSI GaAs ICs;166
10.7;VII. Summary;175
10.8;Acknowledgments;176
10.9;References;176
11;Chapter 5 Computer Modeling of MOSFETs;178
11.1;I. Introduction;178
11.2;II. MOSFET Device Modeling;181
11.3;III. Results and Discussion;195
11.4;IV. Conclusions;206
11.5;Acknowledgments;207
11.6;References;207
12;Chapter 6 The Numerical Physics of Micron-Length and Submicron-Length Semiconductor Devices;212
12.1;I. Introduction;213
12.2;II. The Semiconductor Equations;217
12.3;III. The Boltzmann Transport Equation;235
12.4;IV. Quantum Transport Theory;276
12.5;V. Diffusion;288
12.6;Appendix A. Derivation of the Balance Equations;303
12.7;Appendix B. The Wigner Distribution Function;305
12.8;Acknowledgments;311
12.9;References;311
13;Chapter 7 Optical Linewidth Measurements on Photomasks and Wafers;316
13.1;I. Introduction;317
13.2;II. Limitations of Traditional Methods;317
13.3;III. Modeling of the Optical Image;324
13.4;IV. Primary Linewidth-Measurement System;333
13.5;V. Primary Linewidth Measurements on Photomasks;336
13.6;VI. Linewidth Measurements with Conventional Optical Systems on Photomasks;338
13.7;VII. Linewidth Measurements on Other Materials;346
13.8;References;359
14;Chapter 8 The Effects of Materials Technology and Fabrication Tolerances on Guided-Wave Optical Communication and Signal Processing;362
14.1;I. Introduction;363
14.2;II. Optical Guided-Wave Components in Communications and Signal-Processing Systems;364
14.3;III. The Effect of Fabrication Techniques on the Performance of Optical Guided-Wave Components;366
14.4;IV. Conclusion;384
14.5;References;385
15;Chapter 9. The Impact of VLSI on CAM;390
15.1;I. Introduction;390
15.2;II. CAM's Structure;395
15.3;III. VLSI's Impact on CAM;398
15.4;IV. Education and Training;450
15.5;Acknowledgments;453
15.6;References;453
16;Index ;454
17;Contents of Other Volumes;466