E-Book, Englisch, Band Volume 5, 416 Seiten, Web PDF
Einspruch VLSI Electronics
1. Auflage 2014
ISBN: 978-1-4832-1772-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Microstructure Science
E-Book, Englisch, Band Volume 5, 416 Seiten, Web PDF
Reihe: VLSI Electronics Microstructure Science
ISBN: 978-1-4832-1772-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
VLSI Electronics: Microstructure Science, Volume 5 considers trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the automation for VLSI manufacture, silicon material properties for VLSI circuitry, and high-performance computer packaging and thin-film multichip module. The nanometer-scale fabrication techniques, high-density CCD memories, and solid-state infrared imaging are also elaborated. This text likewise covers the impact of microelectronics upon radar systems and quantum-mechanical limitations on device performance. This volume is a good source for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;VLSI Electronics Microstructure Science;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Chapter 1. Automation for VLSI Manufacture;14
7.1;I. Introduction;14
7.2;II. VLSI Manufacturing Technology;15
7.3;III. Automation for VLSI Manufacture;27
7.4;IV. Summary;60
7.5;References;61
8;Chapter 2. Silicon Material Properties for VLSI Circuitry;64
8.1;I. Introduction;64
8.2;II. Fabrication of Silicon Material and VLSI Circuits: A Summary;67
8.3;III. Silicon Material Phenomena Important for VLSI Circuitry;74
8.4;IV. Electrical Effects of Point Defects and Crystal Strain on VLSI Circuitry;92
8.5;V. Historical Perspective on the Evolution of Silicon Material Technology;103
8.6;VI. Conclusion; Recommendations;108
8.7;References;111
9;Chapter 3. High-Performance Computer Packaging and the Thin-Film Multichip Module;116
9.1;I. Introduction—The Trend for High-Performance Computer Packaging;117
9.2;II. The Multilayer Ceramic Module for LSI Chips;120
9.3;III. Challenges for Designing Future High-Performance Multichip Modules;125
9.4;IV. Thin-Film Interconnection Lines;129
9.5;V. The Delta-I Problem and On-Module Capacitor;142
9.6;VI. Thin-Film Line Fabrication and the Defect Problem;149
9.7;VII. Conclusion—The Thin-Film Module as a High-Performance Package;154
9.8;References;155
10;Chapter 4. Nanometer-Scale Fabrication Techniques;158
10.1;I. Introduction;159
10.2;II. Resist Processes and Resolution Limits;159
10.3;III. Exposure and Patterning Techniques;170
10.4;IV. Three-Dimensional Techniques;187
10.5;V. Conclusions;197
10.6;References;198
11;Chapter 5. High-Density CCD Memories;204
11.1;I. Introduction;204
11.2;II. Early Use of Electron-Beam Technology to Fabricate CCDs;207
11.3;III. MOS RAM VERSUS CCD;210
11.4;IV. Technology Components;211
11.5;V. CCD Memory Structure;214
11.6;VI. Two-Phase Cell;215
11.7;VII. Channel Stop;217
11.8;VIII. Barriers;218
11.9;IX. Maximum Charge Capacity;219
11.10;X. Processing Error Budgets;220
11.11;XI. Other Processing Effects;225
11.12;XII. CCD Array Structures;225
11.13;XIII. Examples of Device Operation;229
11.14;XIV. Process Problems;231
11.15;XV. Technology Status and Forecast;233
11.16;Appendix. Optimum Cell Layout;234
11.17;References;237
12;Chapter 6. Solid-State Infrared Imaging;240
12.1;I. Introduction;241
12.2;II. Infrared Imaging Principles;243
12.3;III. Staring and Scanning FPAs;248
12.4;IV. Infrared Detectors and Readout Structures;252
12.5;V. Area and Line Arrays;260
12.6;VI. Array Technologies;269
12.7;VII. Array Characterization;279
12.8;VIII. Infrared-Imaging-System Performance;290
12.9;IX. Concluding Remarks;303
12.10;References;305
13;Chapter 7. Impact of Microelectronics upon Radar Systems;310
13.1;I. Overview;310
13.2;II. System Requirements Drive Technology;312
13.3;III. Subsystems and Technology Requirements;315
13.4;IV. Key Microelectronic Technologies;323
13.5;V. Summary;340
13.6;Selected References;341
14;Chapter 8. Materials Science, Chemistry, and Physics at Small Dimensions;342
14.1;I. Materials Science;343
14.2;II. Chemistry;350
14.3;III. Physics;355
14.4;References;369
15;Chapter 9. Quantum-Mechanical Limitations on Device Performance;372
15.1;I. Fundamental Limits on Logic Devices;372
15.2;II. Technology-Independent Quantum Limits;386
15.3;References;399
16;Index;400
17;Contents of Other Volumes;415




