E-Book, Englisch, Band Volume 16, 374 Seiten, Web PDF
Einspruch / Watts Lithography for VLSI
1. Auflage 2014
ISBN: 978-1-4832-1782-6
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
VLSI Electronics Microstructure Science
E-Book, Englisch, Band Volume 16, 374 Seiten, Web PDF
Reihe: VLSI Electronics Microstructure Science
ISBN: 978-1-4832-1782-6
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
VLSI Electronics Microstructure Science, Volume 16: Lithography for VLSI treats special topics from each branch of lithography, and also contains general discussion of some lithographic methods. This volume contains 8 chapters that discuss the various aspects of lithography. Chapters 1 and 2 are devoted to optical lithography. Chapter 3 covers electron lithography in general, and Chapter 4 discusses electron resist exposure modeling. Chapter 5 presents the fundamentals of ion-beam lithography. Mask/wafer alignment for x-ray proximity printing and for optical lithography is tackled in Chapter 6. Chapters 7 and 8 on metrology deal with the characterization of lithography by measurements of various types. Engineers, scientists, and technical managers in the semiconductor industry, and engineering and applied physics faculty and graduate students will find the text very useful.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;Lithography for VLSI;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Chapter 1. Optical Lithography;14
7.1;I. INTRODUCTION;14
7.2;II. OPTICAL RESISTS;14
7.3;III. CONTACT AND PROXIMITY PRINTING;16
7.4;IV. PROJECTION PRINTING;20
7.5;REFERENCES;30
8;Chapter 2. Lumped Parameter Model for Optical Lithography;32
8.1;I. INTRODUCTION;33
8.2;II. BACKGROUND;34
8.3;III. LUMPED PARAMETER MODEL;40
8.4;IV. COMPARISON WITH EXPERIMENTAL DATA;51
8.5;V. SUMMARY;54
8.6;APPENDIX A: IMAGE INTENSITY DISTRIBUTION;55
8.7;APPENDIX B: THEORY AND MATHEMATICS OF THE LUMPED PARAMETER MODEL;64
8.8;REFERENCES;68
9;Chapter 3. The Evolution of Electron-Beam Pattern Generators for Integrated Circuit Masks at AT&T Bell Laboratories;70
9.1;1. INTRODUCTION;70
9.2;II. INTEGRATED CIRCUIT MASKS;71
9.3;III. A NEW SYSTEM: EBES4;78
9.4;IV. OVERALL SYSTEM DESCRIPTION;84
9.5;V. CONCLUSIONS;114
9.6;REFERENCES;115
10;Chapter 4. Electron Resist Process Modeling;116
10.1;I. INTRODUCTION;116
10.2;II. ELECTRON-BEAM EXPOSURE MODELING;118
10.3;III. ELECTRON RESIST DEVELOPMENT MODELING;129
10.4;IV. ELECTRON RESIST PROFILE MODELING;135
10.5;V. CONCLUSIONS;155
10.6;ACKNOWLEDGMENTS;157
10.7;REFERENCES;157
11;Chapter 5. Ion-Beam Lithography;160
11.1;I. INTRODUCTION;161
11.2;II. PROCESSING WITH ION BEAMS;162
11.3;III. ION-SUBSTRATE INTERACTIONS;164
11.4;IV. ION-BEAM LITHOGRAPHY SYSTEMS AND INSTRUMENTATION;186
11.5;V. PROBLEMS AND LIMITATIONS IN ION-BEAM LITHOGRAPHY;222
11.6;VI. CONCLUSIONS;233
11.7;REFERENCES;235
12;Chapter 6. Alignment Techniques in Optical and X-Ray Lithography;242
12.1;1. INTRODUCTION;242
12.2;II. REVIEW OF OPTICAL PRINCIPLES;243
12.3;III. METHODS OF ALIGNMENT;250
12.4;IV. MEASUREMENT OF ALIGNED WAFERS;274
12.5;V. SUMMARY;276
12.6;REFERENCES;277
13;Chapter 7. Metrology in Microlithography;278
13.1;I. INTRODUCTION;279
13.2;II. ACCURACY AND PRECISION;280
13.3;III. IMAGING IN THE OPTICAL MICROSCOPE;286
13.4;IV. IMAGING IN THE SCANNING ELECTRON MICROSCOPE;309
13.5;V. DIMENSIONAL METROLOGY;318
13.6;VI. CONCLUSIONS;328
13.7;ACKNOWLEDGMENTS;329
13.8;REFERENCES;329
14;Chapter 8. Electrical Measurements for Characterizing Lithography;332
14.1;I. INTRODUCTION;333
14.2;II. LITHOGRAPHIC SYSTEMS;334
14.3;III. ELECTRICAL MEASUREMENT;344
14.4;IV. IMAGERY CHARACTERIZATION;354
14.5;V. OVERLAY CHARACTERIZATION;358
14.6;VII. CONCLUSION;367
14.7;APPENDIX A;368
14.8;ACKNOWLEDGMENT;369
14.9;REFERENCES;369
15;Index;370
