Einspruch / Wisseman GaAs Microelectronics

VLSI Electronics Microstructure Science
1. Auflage 2014
ISBN: 978-1-4832-1777-2
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 11, 472 Seiten, Web PDF

Reihe: VLSI Electronics Microstructure Science

VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Autoren/Hrsg.

Einspruch, Norman G.

Wisseman, William R.

Inhaltsverzeichnis

1;Front Cover;1
2;GaAs Microelectronics;4
3;Copyright Page;5
4;Table of Contents;6
5;List of Contributors;10
6;Preface;12
7;Chapter 1. GaAs Technology Perspective;14
7.1;I. INTRODUCTION;14
7.2;II. HISTORY OF GaAs TECHNOLOGY DEVELOPMENT;16
7.3;III. PROPERTIES OF GaAs AND RELATED lll-V COMPOUNDS;22
7.4;IV. DEVICE STRUCTURES FOR INTEGRATED CIRCUITS;34
7.5;V. NEW MATERIALS AND DEVICES;45
7.6;VI. SUMMARY;46
7.7;ACKNOWLEDGMENTS;47
7.8;REFERENCES;47
8;Chapter 2. GaAs Material Preparation and Characterization;54
8.1;I. INTRODUCTION;54
8.2;II. GROWTH OF GaAs SINGLE CRYSTALS;56
8.3;III. DIRECT ION IMPLANTATION;64
8.4;IV. SUBSTRATE AND ACTIVE LAYER CHARACTERIZATION;82
8.5;REFERENCES;92
9;Chapter 3. GaAs Monolithic MicrowaveIntegrated Circuits;100
9.1;I. GaAs MMIC OVERVIEW;101
9.2;II. FUNDAMENTALS OF GaAs MICROWAVE DEVICE
TECHNOLOGY;105
9.3;III. GaAs MMIC DESIGN PRINCIPLES;112
9.4;IV. GaAs MMIC PROCESSING TECHNIQUES;122
9.5;V. EXAMPLES OF MMIC TECHNOLOGY;131
9.6;VI. APPLICATIONS OF GaAs MMICS;137
9.7;VII. ISSUES AND ASSESSMENT;141
9.8;REFERENCES;144
10;Chapter 4. The Future Impact of GaAs Digital
Integrated Circuits;146
10.1;I. INTRODUCTION;146
10.2;II. HIGH-SPEED GaAs DEVICES AND CIRCUITS;147
10.3;III. LSI LIMITATIONS OF LOGIC GATES;154
10.4;IV. DESIGN-RULE EFFECTS ON SPEED PERFORMANCE;156
10.5;V. GaAs DIGITAL IC FABRICATION TECHNOLOGY;165
10.6;VI. HIGH-SPEED DIGITAL IC TECHNOLOGY COMPARISON;180
10.7;ACKNOWLEDGMENT;183
10.8;REFERENCES;183
11;Chapter 5. GaAs Bipolar Digital Integrated Circuits;186
11.1;I. GaAs BIPOLAR DEVELOPMENT: A HISTORICAL
PERSPECTIVE;186
11.2;II. GaAs/AIGaAs EPITAXIAL MATERIALS PREPARATION;189
11.3;III. GaAs HETEROJUNCTION BIPOLAR TRANSISTORS;198
11.4;IV. HETEROJUNCTION BIPOLAR GATE ARRAY TECHNOLOGY;208
11.5;V. CONCLUSIONS;224
11.6;ACKNOWLEDGMENTS;224
11.7;REFERENCES;224
12;Chapter 6. The Selectively Doped Heterostructure Transistor:
Materials, Devices, and Circuits;228
12.1;I. INTRODUCTION;229
12.2;II. MATERIAL PROPERTIES OF SDHT STRUCTURES;236
12.3;III. DISCRETE DEVICES;248
12.4;IV. SDHT CIRCUIT IMPLEMENTATIONS;265
12.5;V. CONCLUSIONS;271
12.6;REFERENCES;273
13;Chapter 7. On-Wafer Measurement of
Gigahertz Integrated Circuits;278
13.1;I. INTRODUCTION;279
13.2;II. LIMITATIONS OF CONVENTIONAL LOW-FREQUENCY
WAFER PROBES;280
13.3;III. LOW-PARASITIC HYBRID MIC TECHNOLOGY PROBES;285
13.4;IV. HIGH-ACCURACY ON-WAFER MEASUREMENTS;290
13.5;V. CONCLUSIONS;298
13.6;REFERENCES;300
14;Chapter 8. Packaging and Interconnection
of GaAs Digital Integrated Circuits;302
14.1;I. INTRODUCTION;302
14.2;II. SIGNAL PROCESSING APPLICATIONS REQUIRING
DIGITAL GaAs;304
14.3;III. DESIGN ISSUES FOR DIGITAL GaAs;307
14.4;IV. PACKAGING AND INTERCONNECT TECHNOLOGY ISSUES
FOR HIGH-FREQUENCY GaAs DIGITAL INTEGRATED CIRCUITS;313
14.5;V. ELECTRICAL PROBLEMS CREATED IN LCCCs AND PWB STRUCTURES BY INDUCTANCE
IN THE POWER AND GROUND PLANES;339
14.6;REFERENCES;344
15;Chapter 9. GaAs VLSI Technology
for High-Speed Computers;346
15.1;I. INTRODUCTION;346
15.2;II. GaAs DEVICES FOR HIGH-PERFORMANCE VLSI;348
15.3;III. SELF-ALIGNED GaAs MESFET TECHNOLOGY FOR VLSI;350
15.4;IV. HEMT TECHNOLOGY FOR VLSI;361
15.5;V. APPLICATION TO HIGH-SPEED COMPUTERS;372
15.6;VI. SUMMARY;376
15.7;ACKNOWLEDGMENTS;377
15.8;REFERENCES;377
16;Chapter 10. Military Applications
of GaAs Integrated Circuits;380
16.1;I. INTRODUCTION;381
16.2;II. FUNCTIONAL REPLICATION;382
16.3;III. MICROWAVE ANALOG APPLICATIONS;385
16.4;IV. MICROWAVE DIGITAL APPLICATIONS;391
16.5;VI. NOVEL APPLICATIONS;394
16.6;VI. APPLICATIONS REQUIRING ASSORTED ICs;399
16.7;VII. SUMMARY;402
16.8;REFERENCES;403
17;Chapter 11. Radiation Effects
in GaAs Integrated Circuits;404
17.1;I. INTRODUCTION;404
17.2;II. DAMAGE MECHANISMS;406
17.3;III. DEGRADATION OF DEVICE CHARACTERISTICS
DUE TO FAST NEUTRON EXPOSURE;413
17.4;IV. TOTAL DOSE EFFECTS OF IONIZING RADIATION;420
17.5;V. TRANSIENT RESPONSE TO PULSED IONIZING RADIATION;423
17.6;VI. MODELING OF LOGIC UPSET IN GaAs ICs;429
17.7;VII. SINGLE EVENT UPSET;433
17.8;VIM. ANNEALING CHARACTERISTICS OF DEFECTS;441
17.9;IX. PROSPECTS FOR RADIATION-HARDENED GaAs ICs;445
17.10;ACKNOWLEDGMENTS;447
17.11;REFERENCES;447
18;Index;450
19;Contents of Other Volumes;466