Sonstiges, Englisch, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-867-1
Verlag: Trans Tech Publications
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials ? 1999 (ICSCRM?99), held October 10-15, 1999, at Research Triangle Park, North Carolina.
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Status of Large Diameter SiC Crystal Growth for Electronic and Optical ApplicationsLarge Diameter PVT Growth of Bulk 6H SiC CrystalsProgress in SiC Bulk GrowthGeneration and Properties of Semi-Insulating SiC SubstratesVanadium-free Semi-insulating 4H-SiC SubstratesNumerical Simulation of SiC Boule Growth by SublimationGlobal Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT GrowthAn Analytical Study of the SiC Growth Process from Vapor PhaseGrowth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process ConditionsExperimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk GrowthSeed Surface Preparation for SiC Sublimation GrowthSingle Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation MethodThermal Decomposition Cavities in Physical Vapor Transport Grown SiCInitial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with MicropipesNucleation of Dislocations during Physical Vapor Transport Growth of Silicon CarbidePlastic Deformation and Residual Stresses in SiC Boules Grown by PVTDigital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source DegradationSiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray TechniqueRole of Temperature Gradient in Bulk Crystal Growth of SiCPressure Effect in Sublimation Growth of Bulk SiCStudy of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVTEvaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and KineticsConsiderations on the Crystal Morphology in the Sublimation Growth of SiCShape of SiC Bulk Single Crystal Grown by SublimationEnlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite LidTop-seeded Solution Growth of Bulk SiC: Search for Fast Growth RegimesControlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely MethodCrystal Growth of 15R-SiC Boules by Sublimation MethodGrowth of 3C SiC Single Crystals from Convection Dominated MeltsAn Overview of SiC GrowthFast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth DevelopmentsMorphology Control for Growth of Thick Epitaxial 4H SiC LayersVertical Hot-Wall Type CVD for SiC GrowthLPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by InductionThe Development of Resistive Heating for the High Temperature Growth of a-SiC using a Vertical CVD ReactorInitial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase EpitaxyHigh Growth Rate Epitaxy of Thick 4H-SiC LayersCompetitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall ReactorMulti-Wafer VPE Growth and Characterization of SiC Epitaxial LayersHomoepitaxy of Silicon Carbide Using the Single Precursor 1,3-DisilabutaneSupersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth4H-SiC (11-20) Epitaxial GrowthHomoepitaxial Growth of 6H SiC on Single Crystalline SpheresMorphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor DepositionGrowth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam EpitaxyMolecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiCThermodynamical Consideration of the Epitaxial Growth of SiC PolytypesMechanisms of SiC(111) Step Flow GrowthMechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation EpitaxyInvestigation of 3C-SiC Epitaxial Layers Grown by Sublimation EpitaxyGrowth of SiC and GaN on Porous Buffer Layers4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis SubstratesTemperature Gradient Effect on SiC Epitaxy in Liquid PhaseMicropipe Healing in Liquid Phase Epitaxial Growth of SiCGrowth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed ReactorLateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si SubstratesSelective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and PropaneThe APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) SubstrateImprovement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVDCarbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiCGrowth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free JetsFormation of High Quality SiC on Si(100) at 900?C using Monomethylsilane Gas-Source MBEGrowth and Characterization of N-Doped SiC Films from TrimethylsilaneThe Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si SubstratesIn Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si SurfacesStructural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)SiThe Influence of Foreign Atoms on the early Stages of SiC Growth on (111)SiStudies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas SpeciesCarbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulatorSOL Thinning Effects on 3C-SiC on SOI*Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate DevelopmentEpitaxial Growth of ?-SiC on Ion-Beam Synthesized ?-SiC: Structural CharacterizationGrowth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed CrystalThe Growth and Characterization of 3C-SiC/SiNx/Si StructureThe Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown LayersPlasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on SiThin Films of a-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution RoleSurface Composition of 4H-SiC as a Function of TemperatureStacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure GrowthAtomic Structure of 6H-SiC(000-1)-(2x2)cAb Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (v 3xv 3)R30? ReconstructionPhoto-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)High Resolution Electron Energy Loss Spectroscopy of v 3xv 3 6H-SiC(0001)In-Situ RHEED Analysis During a-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy(10-10)? and (11-20)?Surfaces in 2H?, 4H? and 6H?SiCTheory of Structural and Electronic Properties of Cubic SiC SurfacesCharacterization of Anisotropic Step-bunching on as-grown SiC SurfacesObservation of Macrostep Formation on the (0001) Facet of Bulk SiC CrystalsSilicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiCElectronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiCPhotoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001)Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 SurfaceXPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide AmbientSurface Studies on Thermal Oxidation on 4H-SiC EpilayerQuantified Conditions for Reduction of ESO Contamination During SiC MetalizationThermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface CharacterizationA Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated TemperaturesStudy of a Clean Surface of a - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon SpectroscopiesMonolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiCGroup-??? Adsorption and Bond Stacking on SiC(111) SurfacesCharacterization of SiC using Synchrotron White Beam X-ray TopographyGrowth of Low Micropipe Density SiC WafersInvestigation of the Origin of Micropipe DefectAnalysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk CrystalsOrigin of the Internal Stress Around the Micropipe of 6H-SiC Single CrystalStructural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of MicropipesIn-situ Observation of SiC Bulk Single Crystal Growth by X-Ray TopographyX-ray Topographic Study of SiC Crystal at High TemperatureSynchrotron White Beam Topography Studies of 2H SiC CrystalsSynchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely PlateletX-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental WafersOrigin of Threading Dislocation Arrays in SiC Boules Grown by PVTStructural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical EtchingPolytype and Defect Control of Two Inch Diameter Bulk SiCCorrelation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky DiodesInvestigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray DiffractometryStructural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiCHigh Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe DensityStructural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum SublimationStacking Fault Energy of 6H-SiC and 4H-SiC Single CrystalsDeformation Tests on 4H-SiC Single Crystals between 900?C and 1360?C and the Microstructure of the Deformed SamplesVoid Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si InterfaceDefect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOXStructural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 SystemIllusion of New PolytypesMicrostructural, Optical and Electronic Investigation of Anodized 4H-SiCCharacterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS ApplicationsTheory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its ColorsAbsorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiCDetermination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level PhotoinjectionBandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance InvestigationsHole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron ResonanceDifferential Absorption Measurement of Valence Band Splittings in 4H SiCAnisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic EllipsometryOptical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic EllipsometryIsotope Effects on the Raman Spectrum of SiCDisappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiCSelectively Resonant Raman Spectra of Folded Phonon Modes in SiCRaman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant ConditionRaman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on SiCharacterization of 3C-SiC/SOI Deposited with HMDSRaman Imaging Characterization of Electric Properties of SiC Near a MicropipeCarrier Density Evaluation in P-Type SiC by Raman ScatteringShallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization SpectroscopyCharacterization of Silicon Carbide using Raman SpectroscopyPhotoluminescence Study of CVD Layers Highly Doped with NitrogenLow Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely MethodSub-?m Scale Photoluminescence Image of SiC and GaN at a Low TemperatureVanadium-related Center in 4H Silicon CarbideSpectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiCPhotoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiCElectronic States of Vacancies in 3C- and 4H-SiCPseudo-Donors in SiCMetastability of a Hydrogen-related Defect in 6H-SiCOptical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiCMicroscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiCConfocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiCIon Beam Induced Change in the Linear Optical Properties of SiCFree Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection DependenceTime-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiCOptical Lifetime Measurements in 4H SiCOptical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission MicroscopyElectroluminescence From Implanted and Epitaxially Grown pn-DiodesAvalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting DiodesPhoton Emission Mechanisms in 6H and 4H-SiC MOSFETsNon-Contact Photovoltage Measurements in SiCIonization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon CarbideMicroRaman and Hall Effect Study of n-Type Bulk 4H-SiCElectrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier ConcentrationsA Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H?and 6H?SiCTheoretical Calculation of the Electron Hall Mobility in n-Type 4H? and 6H-SiCHall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical SimulationHall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETsApplication and Improvement of the Spreading Resistance Method for p-Type 6H-SiCTheoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiCOn the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiCCorrelation between DLTS and Photoluminescence in He-implanted 6H-SiCObservation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient SpectroscopyImproved Measurements of High-Field Drift Velocity in Silicon CarbideA Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiCElectron Saturated Vertical Velocities in Silicon Carbide PolytypesHigh Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiCElectron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide DiodesMeasurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power DiodesDonors and Acceptors in SiC-Studies with EPR and ENDORESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited StatesDopant-related Complexes in SiCThe Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiCThe Electronic Structure of the Be Acceptor Centers in 6H-SiCElectron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon CarbideESR Study of Delamination in H+ Implanted Silicon CarbideVacancies and their Complexes with H in SiCThe Carbon Vacancy Pair in 4H and 6H SiCElectron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon CarbidePhysics of SiC ProcessingPolishing and Surface Characterization of SiC SubstratesComparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon BackscatteringDamage-Free Surface Modification of Hexagonal Silicon Carbide WafersNuclear Transmutation Doping of Phosphorus into 6H-SiCRadiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus IonsHot-Implantation of Phosphorus Ions into 4H-SiCElectrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High TemperatureDamage Evolution in Al-implanted 4H SiCExcimer Laser Annealing of Ion-Implanted 6H-Silicon CarbideHigh Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace AnnealingConsequences of High-Dose, High Temperature Al+ Implantation in 6H-SiCAl and Al/C High Dose Implantation in 4H-SiCChanneled Implants in 6H Silicon CarbideDamage Reduction in Channeled Ion Implanted 6H-SiCIon Beam Induced Nanocrystallization of SiCHigh Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step BunchingCharacterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiCElectrical and Structural Properties of Al and B Implanted 4H-SiCSecondary Defect Distribution in High Energy Ion Implanted 4H-SiCCoimplantation Effects of (C and Si)/Ga in 6H-SiCImproved Annealing Process for 6H-SiC p+-n Junction Creation by Al ImplantationCharacteristics of n-p Junction Diodes made by Double-Implantations into SiCReactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiCFormation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of HydrogenMetal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiCTransient-Enhanced Diffusion of Boron in SiCSelective Doping of 6H-SiC by Diffusion of BoronAb Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron DiffusionBeryllium Implantation Doping of Silicon CarbideIon-Channeling Studies of Interfaces and Defect Properties in Silicon CarbideFormation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent AnnealingMicrostructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal AnnealingVacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation TechniquesDeep Centres Appearing in 6H and 4H SiC after Proton IrradiationRadiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton IrradiationStudy of Contact Formation by High Temperature Deposition of Ni on SiCOhmic Contact Formation on n-Type 6H-SiC using NiSi2Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV SensorAdhesion and Microstructure of Ni Contacts to 3C-SiCLow Resistance Ohmic Contacts to n-SiC Using NiobiumA Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated TemperaturesImproved Ohmic Contacts to 6H-SiC by Pulsed Laser ProcessingAl/Si Ohmic Contacts to p-Type 4H-SiC for Power DevicesSearching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiCStructural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various ConditionsThermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiCA UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact FormationFermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiCReal-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact FormationPre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low PressureSiC In-Situ Pre-Growth Etching: A Thermodynamic StudyThe Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography StudyDry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device ProcessDemonstration of Deep (80?m) RIE Etching of SiC for MEMS and MMIC ApplicationsReactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC DevicesElectrochemical C-V Profiling of P-type 6H-SiCElectrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel MobilityAnomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS DevicesEffect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC InterfaceProcess Dependence of Inversion Layer Mobility in 4H-SiC DevicesControlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC EpilayerOzone Treament of SiC for Improved Performance of Gas Sensitive Schottky DiodesReliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon CarbideSiC Devices with ONO Stacked DielectricsThe Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiCChannel Doped SiC-MOSFETsAnisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) FaceMOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet OxidationInterface Trap Profiles Near the Band Edges in 6H-SiC MOSFETsCharacterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage AnalysisMobility in 6H-SiC n-Channel MOSFETsEffects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiCEffects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor StructuresAtomic-Scale Engineering of the SiC-SiO2 InterfaceComparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450?CMolding-based Thin Film Patterning Techniques for SiC Surface MicromachiningBulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion EtchingPreliminary Investigation of SiC on Silicon for Biomedical ApplicationsSiC and GaN High-Voltage Power Switching DevicesElectrical Impact of SiC Structural Crystal Defects on High Electric Field DevicesPerformance and Reliability Issues of SiC-Schottky DiodesDesigning, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD FilmsInfluence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky DiodesA 2.8kV, Forward Drop JBS Diode with Low Leakage3.6 kV 4H-SiC JBS Diodes with Low RonSFabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge CircuitLarge Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing TechniquesOptical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky RectifiersEffect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes4H-SiC Device Scaling Development on Repaired Micropipe SubstratesDesign and Characterization of a SiC Schottky Diode MixerBreakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface ImplantDC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown VoltageLateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge TerminationCharacterization of Schottky Contact on p-type 6H-SiCComputer Simulation of P-type SiC Schottky Diode using ATLASSchottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor DepositionCharacterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor DepositionStatic and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking CategoriesPower Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating WaferSurface Induced Instabilities in 4H-SiC Microwave MESFETsCharacterization of SiC MESFETs on Conducting SubstratesFabrication, Characterization, and Modeling of SiC MESFETsPhysical Simulations on the Operation of 4H-SiC Microwave Power TransistorsProperties of Transmission Lines on Various SiC SubstratesHigh Temperature, High Current, 4H-SiC Accu-DMOSFET4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETsNitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiCEffect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS StructuresAccumulation-Mode SiC Power MOSFET Design IssuesProgress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology+Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800VInfluence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETsEffect of Boron Implantation on 6H-SiC N-MOSFET Interface PropertiesInvestigation of Lateral RESURF, 6H-SiC MOSFETsHighly Durable SiC nMISFET's at 450?CSiC MISFETs with MBE-grown AlN Gate DielectricSteady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current DensitiesCurrent Voltage Characteristics of High-Voltage 4H Silicon Carbide DiodesDynamic Avalanche and Trapped Charge in 4H-SiC DiodesComparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction RectifiersDynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-OffSimulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring TerminationTransient Characterization of SiC P-N DiodeFormation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse CharacteristicsDefect Modeling and Simulation of 4-H SiC P-N Diode6H-SiC Diodes with Cellular Structure to Avoid Micropipe EffectsA Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown VoltagesStudy of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC CharacterisationAl/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers6.2KV 4H-SiC pin Diode with Low Forward Voltage DropTheoretical and Experimental Study of 4H-SiC Junction Edge TerminationMonte Carlo Simulation of 4H-SiC IMPATT DiodesDemonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor DevelopmentFactors Influencing the Design and Performance of 4H-SiC GTO Thyristors4H-SiC Gate Turn-Off Thyristor Designs for Very High Power ControlFabrication and Characterization of 4H-SiC GTOs and Diodes100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM InverterSiC-Power RectifiersComparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTsDesign and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiCTCAD Evaluation of Double Implanted 4H-SiC Power Bipolar TransistorsOperation of a 2500V 150A Si-IGBT / SiC Diode ModuleHigh-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature OperationHigh Temperature 4H-SiC FET for Gas Sensing ApplicationsHigh Temperature Gas Sensors Based on Catalytic Metal Field Effect TransistorsSiC-Based Gas Sensor DevelopmentFabrication of SiC Hydrogen Sensor by Pd-ImplantationEpitaxial 6H-SiC Layers as Detectors of Nuclear ParticlesGaN Quantum Dots on Sapphire and Si SubstratesAchievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In ExposureCrack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon3C-SiC Pseudosubstrates for the Growth of Cubic GaNLateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin FilmsPendeoepitaxy of GaN and InGaN LEDs on SiCComparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman SpectroscopyHigh Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELOPendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor DepositionReduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase EpitaxyComparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth TemperaturePulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor ResearchInvestigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour DepositionAlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow RegionSilicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport ProcessLow-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiCPulsed Laser Deposition of Oriented Aluminum Nitride Thin Films and Their ApplicationState of Art of c-BN Growth Physics: Substrate EffectAdsorption and Desorption of Hydrogen on Ga-rich GaN(0001)Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001)The Reaction of Oxygen with GaN(0001)Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam EpitaxyAnalysis of Dislocation Densities and Nanopipe Formation in MBE-grown AlN-LayersCorrelation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH3Improved Electron Emission from Defective Diamond Film Deposited by CVD MethodTheory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related MaterialsNonabrupt Interface Related Exciton Energy Shifts in GaN/AlxGa1-xN Quantum DotsRadiative Recombination in InGaN/GaN Multiple Quantum WellsImpact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence SpectroscopyStructured Ultrafast Carrier Drift Velocity in Photoexcited Zincblende GaNCharacterization of Thick GaN Layers Using Guided Optical WavesPolarization Memory in Band Edge Luminescence from Free Standing Gallium NitrideEnhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-DopingResonant Raman Scattering and the Emission Process in Zincblende-InxGa1-xNA Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon CarbideLow Frequency Noise in n-GaN with High Electron MobilityRole of Alloy Fluctuations in InGaN-Based LEDs and Laser DiodesInfluence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaNOhmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature AnnealingTime-Resolved Photoluminescence Measurements of InGaN Light-Emitting DiodesGaN PIN Photodiodes Grown on Sapphire and SiC SubstratesTemperature Dependent Performance of GaN Schottky Diode RectifiersMonte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n+-n--n-n+ GaN StructuresDC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching ProcessImproved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon CarbideCharacterization of AlGaN/GaN HEMT Devices Grown by MBEA Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction DiodesElectric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
