Carter Jr. / Devaty / Rohrer Silicon Carbide and Related Materials - 1999
Erscheinungsjahr 2000
ISBN: 978-3-0357-0551-5
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
E-Book, Englisch, 1786 Seiten
ISBN: 978-3-0357-0551-5
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.
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Preface and Overview
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
Large Diameter PVT Growth of Bulk 6H SiC Crystals
Progress in SiC Bulk Growth
Generation and Properties of Semi-Insulating SiC Substrates
Vanadium-free Semi-insulating 4H-SiC Substrates
Numerical Simulation of SiC Boule Growth by Sublimation
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
An Analytical Study of the SiC Growth Process from Vapor Phase
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
Seed Surface Preparation for SiC Sublimation Growth
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
Role of Temperature Gradient in Bulk Crystal Growth of SiC
Pressure Effect in Sublimation Growth of Bulk SiC
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
Considerations on the Crystal Morphology in the Sublimation Growth of SiC
Shape of SiC Bulk Single Crystal Grown by Sublimation
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
Crystal Growth of 15R-SiC Boules by Sublimation Method
Growth of 3C SiC Single Crystals from Convection Dominated Melts
An Overview of SiC Growth
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
Vertical Hot-Wall Type CVD for SiC Growth
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
The Development of Resistive Heating for the High Temperature Growth of a-SiC using a Vertical CVD Reactor
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
High Growth Rate Epitaxy of Thick 4H-SiC Layers
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane
Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
4H-SiC (11-20) Epitaxial Growth
Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes
Mechanisms of SiC(111) Step Flow Growth
Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
Growth of SiC and GaN on Porous Buffer Layers
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
Temperature Gradient Effect on SiC Epitaxy in Liquid Phase
Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor
Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane
The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD
Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC
Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets
Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE
Growth and Characterization of N-Doped SiC Films from Trimethylsilane
The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates
In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si
The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si
Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species
Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator
SOL Thinning Effects on 3C-SiC on SOI*
Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development
Epitaxial Growth of ß-SiC on Ion-Beam Synthesized ß-SiC: Structural Characterization
Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal
The Growth and Characterization of 3C-SiC/SiNx/Si Structure
The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers
Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si
Thin Films of a-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role
Surface Composition of 4H-SiC as a Function of Temperature
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
Atomic Structure of 6H-SiC(000-1)-(2x2)c
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (v 3xv 3)R30° Reconstruction
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
High Resolution Electron Energy Loss Spectroscopy of v 3xv 3 6H-SiC(0001)
In-Situ RHEED Analysis During a-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
Theory of Structural and Electronic Properties of Cubic SiC Surfaces
Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals
Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC
Electronic and Atomic Structur
