Fahrner Nanotechnology and Nanoelectronics

Materials, Devices, Measurement Techniques
1. Auflage 2005
ISBN: 978-3-540-26621-1
Verlag: Springer-Verlag
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 269 Seiten

Split a human hair thirty thousand times, and you have the equivalent of a nanometer. The aim of this work is to provide an introduction into nanotechnology for the s- entifically interested. However, such an enterprise requires a balance between comprehensibility and scientific accuracy. In case of doubt, preference is given to the latter. Much more than in microtechnology – whose fundamentals we assume to be known – a certain range of engineering and natural sciences are interwoven in nanotechnology. For instance, newly developed tools from mechanical engine- ing are essential in the production of nanoelectronic structures. Vice versa, - chanical shifts in the nanometer range demand piezoelectric-operated actuators. Therefore, special attention is given to a comprehensive presentation of the matter. In our time, it is no longer sufficient to simply explain how an electronic device operates; the materials and procedures used for its production and the measuring instruments used for its characterization are equally important. The main chapters as well as several important sections in this book end in an evaluation of future prospects. Unfortunately, this way of separating coherent - scription from reflection and speculation could not be strictly maintained. So- times, the complete description of a device calls for discussion of its inherent - tential; the hasty reader in search of the general perspective is therefore advised to study this work’s technical chapters as well.

Autoren/Hrsg.

Fahrner, Wolfgang

Inhaltsverzeichnis

1;Preface;5
2;Contents;6
3;Contributors;10
4;Abbreviations;11
5;1 Historical Development;15
5.1;1.1 Miniaturization of Electrical and Electronic Devices;15
5.2;1.2 Moore’s Law and the SIA Roadmap;16
6;2 Quantum Mechanical Aspects;18
6.1;2.1 General Considerations;18
6.2;2.2 Simulation of the Properties of Molecular Clusters;18
6.3;2.3 Formation of the Energy Gap;20
6.4;2.4 Preliminary Considerations for Lithography;21
6.5;2.5 Confinement Effects;25
6.6;2.6 Evaluation and Future Prospects;27
7;3 Nanodefects;29
7.1;3.1 Generation and Forms of Nanodefects in Crystals;29
7.2;3.2 Characterization of Nanodefects in Crystals;30
7.3;3.3 Applications of Nanodefects in Crystals;40
7.4;3.4 Nuclear Track Nanodefects;47
7.5;3.5 Evaluation and Future Prospects;49
8;4 Nanolayers;51
8.1;4.1 Production of Nanolayers;51
8.2;4.2 Characterization of Nanolayers;75
8.3;4.3 Applications of Nanolayers;115
8.4;4.4 Evaluation and Future Prospects;115
9;5 Nanoparticles;118
9.1;5.1 Fabrication of Nanoparticles;118
9.2;5.2 Characterization of Nanoparticles;125
9.3;5.3 Applications of Nanoparticles;128
9.4;5.4 Evaluation and Future Prospects;129
10;6 Selected Solid States with Nanocrystalline Structures;131
10.1;6.1 Nanocrystalline Silicon;131
10.2;6.2 Zeolites and Nanoclusters in Zeolite Host Lattices;137
11;7 Nanostructuring;152
11.1;7.1 Nanopolishing of Diamond;152
11.2;7.2 Etching of Nanostructures;159
11.3;7.3 Lithography Procedures;163
11.4;7.4 Focused Ion Beams;181
11.5;7.5 Nanoimprinting;197
11.6;7.6 Atomic Force Microscopy;204
11.7;7.7 Near-Field Optics;205
12;8 Extension of Conventional Devices by Nanotechniques;209
12.1;8.1 MOS Transistors;209
12.2;8.2 Bipolar Transistors;219
13;9 Innovative Electronic Devices Based on Nanostructures;221
13.1;9.1 General Properties;221
13.2;9.2 Resonant Tunneling Diode;221
13.3;9.3 Quantum Cascade Laser;227
13.4;9.4 Single Electron Transistor;233
13.5;9.5 Carbon Nanotube Devices;240
14;References;246
14.1;1 Historic Development;246
14.2;2 Quantum Mechanical Aspects;246
14.3;3 Nanodefects;247
14.4;4 Nanolayers;249
14.5;5 Nanoparticles;251
14.6;6 Selected Solid States with Nanocrystalline Structures;252
14.7;7 Nanostructuring;257
14.8;8 Extension of Conventional Devices by Nanotechniques;261
14.9;9 Innovative Electronic Devices Based on Nanostructures;262
15;Index;268