Fanciulli Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures

2009
ISBN: 978-3-540-79365-6
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 115, 261 Seiten

Reihe: Topics in Applied Physics

Here is a discussion of the state of the art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots. Leading scientists report on recent advances and discuss open issues and perspectives.

Marco Fanciulli is the Director of the CNR-INFM MDM (Materials and Devices for Microelectronics) National Laboratory and Full Professor at the Department of Material Science at the University of Milano Bicocca.

Autoren/Hrsg.

Fanciulli, Marco

Inhaltsverzeichnis

1;Foreword;6
1.1;Index;7
2;Preface;8
3;Contents;10
4;Resistively Detected ESR and ENDOR Experiments in Narrow and Wide Quantum Wells: A Comparative Study;16
4.1;Introduction;16
4.2;Theory;17
4.3;Experiment;19
4.4;Results;19
4.5;Conclusions;26
4.5.1;Acknowledgements;27
4.6;References;27
4.7;Index;28
5;Electron-Spin Manipulation in Quantum Dot Systems;29
5.1;Introduction;29
5.2;Single-Spin Manipulation;30
5.2.1;Oscillating Magnetic Field;31
5.2.2;Slanting Zeeman Field;33
5.3;Two-Spin Interaction;37
5.3.1;Formulation;37
5.3.2;Hybrid Double Dots;41
5.3.3;Double QD with Slanting Zeeman Field;44
5.4;Conclusion;45
5.4.1;Acknowledgments;45
5.5;References;45
5.6;Index;48
6;Resistively Detected NMR in GaAs/AlGaAs;49
6.1;Nuclear Magnetic Resonances with `Too Few Spins';50
6.1.1;The `Too Few Spins' Problem;50
6.1.1.1;The Conventional NMR of Bloch and Purcell;50
6.1.1.2;NMR for Nanostructured Materials;51
6.1.2;Electrons as an In-Situ Detector of the NMR;51
6.1.2.1;Electrical Detection of the NMR in GaAs/AlGaAs in 1988;51
6.1.2.2;The Strong Overhauser Field of GaAs/AlGaAs;52
6.1.2.3;Nuclear-Spin-Dependent Transport in the Quantum Hall Regime;53
6.2;Recent Advances in GaAs/AlGaAs Semiconductor Quantum Wells;54
6.2.1;Resistively Detected NMR Lineshapes in GaAs/AlGaAs;54
6.2.1.1;Resistive NMR Lineshapes;54
6.2.1.2;Skyrmions in the Ground State of Quantum Hall;56
6.2.2;Spin-Lattice Relaxation-Time Measurements;57
6.2.2.1;T1 and the Evidence for a Skyrmion Crystal;58
6.2.2.2;T1 in the Electron Solid Phases of GaAs/AlGaAs;59
6.3;Towards a Complete NMR Probe of Quantum Structures;60
6.3.1;NMR in Quantum Electronic Structures of GaAs/AlGaAs;60
6.3.2;NMR on a Chip: Quantum Coherent Control of the Nuclear Spins at the Nanoscale;61
6.4;Concluding Remarks;62
6.4.1;Acknowledgements;62
6.5;References;62
6.6;Index;63
7;Electron-Spin Dynamics in Self-Assembled (In,Ga)As/GaAs Quantum Dots;65
7.1;Introduction;65
7.2;Experiment;67
7.3;Electron g-Factor;68
7.4;Creation of Spin Coherence by Spin Initialization;70
7.5;Electron-Spin Coherence;79
7.6;Summary;91
7.6.1;Acknowledgements;92
7.7;References;92
7.8;Index;94
8;Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures;95
8.1;Introduction;95
8.2;Measurements of a Single Spin in the SiO2 of a Submicrometer Si Field Effect Transistor;97
8.2.1;Statistical Measurements;98
8.2.2;Detection of Electron-Spin Resonance (ESR) of a Single Spin;102
8.2.3;Single-Shot Measurement;105
8.3;Fabrication and Characterization of Electrostatically Confined Quantum-Dot Structures in Si/SiGe Heterostructures;105
8.3.1;Demonstration of a One-Electron Quantum Dot;106
8.3.2;Characterization of the Spin-Transition Sequence;109
8.3.3;Single-Shot Measurement;110
8.4;Concluding Remarks;112
8.4.1;Acknowledgements;112
8.5;References;112
8.6;Index;114
9;Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence;115
9.1;Introduction;116
9.2;Silicon Quantum Devices;117
9.3;Spins and Valleys;120
9.4;ESR in Silicon Quantum Wells;121
9.5;Samples;123
9.6;ESR Measurements;124
9.7;Decoherence Analysis;125
9.8;Results;127
9.9;Conclusions;129
9.9.1;Acknowledgments;129
9.10;References;129
9.11;Index;140
10;Electrical Detection of Electron-Spin Resonance in Two-Dimensional Systems;142
10.1;Mechanism of Electrical Detection;142
10.2;Determination of Spin-Relaxation Times;146
10.3;References;151
10.4;Index;153
11;Quantitative Treatment of Decoherence;154
11.1;Introduction;154
11.2;Measures of Decoherence;155
11.2.1;Relaxation Timescales;155
11.2.2;Quantum Entropy;156
11.2.3;Fidelity;156
11.2.4;Norm of Deviation;158
11.2.5;Arbitrary Initial States;158
11.3;Decoherence of Double Quantum-Dot Charge Qubits;159
11.3.1;Model;160
11.3.2;Piezoelectric Interaction;161
11.3.3;Deformation Interaction;163
11.3.4;Error Estimates During Gate Functions;164
11.3.5;Relaxation During the NOT Gate;164
11.3.6;Dephasing During a Phase Gate;167
11.3.7;Qubit Error Estimates;168
11.4;Additivity of Decoherence Measures;170
11.4.1;The Maximal Deviation Norm;171
11.4.2;Upper Bound for Measure of Decoherence;173
11.4.3;Acknowledgments;175
11.5;References;175
11.6;Index;180
12;Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon;181
12.1;Quantum Computing with Phosphorus in Silicon;182
12.1.1;Electronic Donor States of Phosphorus in Silicon;183
12.1.2;Coupled Pairs of Phosphorus Donors as Charge Qubits;183
12.1.2.1;Coherent Manipulation;184
12.2;Controlled Single-Ion Implantation;185
12.2.1;Single-Ion Detection with Integrated p-i-n Diodes;185
12.2.1.1;Integration with Nanofabrication;186
12.3;Charge Sensing with Superconducting RF-SETs;186
12.3.1;Layout and Performance of RF-SET Measurements;187
12.3.1.1;Charge Transfer in Atomically Doped Devices;188
12.4;Initialization and Readout with Schottky Contacts;189
12.4.1;Contacting Atomically Doped Devices;189
12.5;Magnetic Resonance in Nanoscale Implanted Devices;190
12.5.1;Summary and Outlook;192
12.5.2;Acknowledgements;192
12.6;References;193
12.7;Index;194
13;Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations;195
13.1;Introduction;195
13.2;Noise, Relaxation, and Decoherence;198
13.2.1;The Bloch-Wangsness-Redfield Master Equation;198
13.2.2;Finite Frequency Phase Fluctuations and Coherence Decay in the Semiclassical-Gaussian Approximation;200
13.2.2.1;General Results for the Short-Time Behavior;203
13.2.2.2;Example: The Gauss-Markov Model;204
13.2.2.3;A Train of Hahn Echoes: The Carr-Purcell Sequence and Coherence Control;205
13.2.2.4;Loss of Visibility Due to High-Frequency Noise;206
13.2.3;Single-Spin Measurement Versus Ensemble Experiments: Different Coherence Times? ;206
13.3;Electron-Spin Evolution Due to Nuclear Spins: Isotropic and Anisotropic Hyperfine Interactions, Internuclear Couplings and the Secular Approximation;208
13.3.1;The Electron-Nuclear Spin Hamiltonian;208
13.3.2;Electron-Nuclear-Spin Evolution in the Secular Approximation;210
13.3.2.1;Inhomogeneous Broadening Due to the Isotropic Hyperfine Interaction;211
13.3.3;Beyond the Secular Approximation: Nuclear-Nuclear Interactions Mediated by the Electron Spin Hyperfine Interaction;212
13.4;Microscopic Calculation of the Nuclear-Spin Noise Spectrum and Electron-Spin Decoherence;214
13.4.1;Nuclear-Spin Noise;215
13.4.2;Mean Field Theory of Noise Broadening: Quasiparticle Lifetimes;218
13.5;Electron Spin-Echo Decay of a Phosphorus Impurity in Silicon: Comparison with Experiment;221
13.5.1;Effective-Mass Model for a Phosphorus Impurity in Silicon;221
13.5.2;Explicit Calculations of the Nuclear-Spin Noise Spectrum and Electron Spin-Echo Decay of a Phosphorus Impurity in Silicon;222
13.6;Conclusions and Outlook for the Future;227
13.6.1;Acknowledgments;229
13.7;References;230
13.8;Index;232
14;A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit;233
14.1;Shallow Impurities in an External Field;235
14.1.1;Envelope Function Approximation;236
14.1.2;The Central-Cell Correction;237
14.1.3;Numerical Basis Set;238
14.2;Phosphorous Impurity in Silicon;238
14.2.1;Bulk Ingredients;239
14.3;Theoretical Results: Si:P;239
14.3.1;The Core-Correction Contribution;240
14.3.2;Stark Effect;241
14.3.3;Electric-Field Dependence of Superhyperfine Constants;244
14.4;Confinement Effects;246
14.5;Conclusions;249
14.6;References;250
14.7;Index;251
15;Photon-Assisted Tunneling in Quantum Dots;252
15.1;Introduction;252
15.2;Theory of Photon-Assisted Tunneling in Quantum Dots;253
15.2.1;Hamiltonian Formalism of Tunneling under Microwave Irradiation;254
15.2.2;Tunneling in Quantum Dots under Microwave Irradiation;255
15.2.3;Typical Regimes of Operation;257
15.3;Experimental Results in III-V Heterostructure Quantum Dots;258
15.3.1;Experimental Setup;258
15.3.2;Single Dots;258
15.3.3;Double Dots;259
15.4;Group IV Heterostructure Quantum Dots;261
15.4.1;Experimental Setup;261
15.4.2;Experimental Results;262
15.5;Si/SiO2 nanoFET Quantum Dots;263
15.5.1;Experimental Setup;263
15.5.2;Experimental Results;264
15.6;Conclusions;267
15.7;References;268
15.8;Index;269
16;Index;270