Fisher Defects and Diffusion in II-VI Compounds

Erscheinungsjahr 1999
ISBN: 978-3-0357-0691-8
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 380 Seiten

This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT.

Autoren/Hrsg.

Fisher, David J.

Inhaltsverzeichnis

Diffusion in II-VI Semiconductors, Ternary System: Hg1-xCdxTe
Dsilocations in MBE-Grown ZnSe/GaAs(001) Epitaxial Layers
Interdiffusion of Mn and Mg Ions in CdTe-Based Quantum Wells, Studied by Spin Tracing
TEM Study of Dislocations in ZnTe/GaAs Heterostructure Grown by Hot-Wall Epitaxy
Theoretical Description of the Diffusion of Atomic Probes in the Core of the Crystallite Conjugation Region*, and in the Adjacent Lattice
An Experimental Study of the Temperature Dependence of the Population of States Associated with Substitutional 57Co Probes in the Core of Crystallite Conjugation Regions and in the Adjacent Lattice Sites of Polycrystalline Tungsten