Francombe / Vossen Physics of Thin Films

Advances in Research and Development
1. Auflage 2013
ISBN: 978-1-4831-0330-3
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 262 Seiten, Web PDF

Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter. Chapter 1 covers ionized cluster beam deposition; epitaxy; and film-formation mechanism. Chapter 2 discusses the activated reactive evaporation process; the deposition of refractory compounds; the role of plasma in the process; and its applications. Chapter 3 focuses on ion-beam processing of optical thin films; ion sources and ion-surface interactions; and the different kinds of bombardment involved. Chapter 4 deals with laser induced etching - its mechanisms, methods, and applications. Chapter 5 talks about contacts to GaAs devices; Fermi-level pinning; and heterojunction contacts. The book is recommended for physicists and engineers in the field of electronics who would like to know more about thin films and the progresses in the field.

Autoren/Hrsg.

Francombe, Maurice H.

Vossen, John L.

Inhaltsverzeichnis

1;Front Cover;1
2;Physics of Thin Film: Advances in Research and Development;4
3;Copyright Page;5
4;Table of Contents;6
5;Contributors to Volume 13;8
6;Preface;10
7;Editors' Note;12
8;Chapter 1. Ionized Cluster Beam Deposition and Epitaxy;14
8.1;I. Introduction;14
8.2;II. Equipment for Ionized Cluster Beam Deposition and Epitaxy;17
8.3;III. Film-Formation Mechanism;28
8.4;IV. Film Deposition and Epitaxial Growth;33
8.5;V. Conclusions;69
8.6;References;69
9;Chapter 2. The Activated Reactive Evaporation Process;72
9.1;I. Introduction;73
9.2;II. Processes for the Deposition of Refractory Compounds;75
9.3;III. Direct Evaporation;75
9.4;IV. Reactive Evaporation Processes;76
9.5;V. Activated Reactive Evaporation and the Role of Plasma;77
9.6;VI. Implementation of the Activated Reactive Evaporation Process;88
9.7;VII. Compounds Synthesized by the ARE Process and the Effect of Process Variables;92
9.8;VIII. Microstructure, Preferred Orientation, and Mechanical Properties of Refractory Compound Deposits;94
9.9;IX. Applications of the ARE Process;107
9.10;X. Summary;116
9.11;References;117
10;Chapter 3.Ion-Beam Processing of Optical Thin Films;122
10.1;I. Introduction;122
10.2;II. Ion Sources;125
10.3;III. Ion-Surface Interactions;129
10.4;IV. Film Properties and Analysis Method;133
10.5;V. Substrate Bombardment;138
10.6;VI. Postdeposition Bombardment;140
10.7;VII. Ion-Beam Deposition of Optical Films;141
10.8;VIII. Conclusion;158
10.9;References;160
11;Chapter 4. Laser-Induced Etching;164
11.1;I. Introduction;164
11.2;II. Mechanisms of Laser-Induced Etching;165
11.3;III. Methods of Laser-Induced Etching;169
11.4;IV. Applications of Laser-Induced Etching;194
11.5;V. Concluding Remarks;204
11.6;References;205
12;Chapter 5. Contacts to GaAs Devices;212
12.1;I. Introduction;212
12.2;II. "Ideal" Contacts;213
12.3;III. The GaAs Surface and Interface—Fermi-Level Pinning;214
12.4;IV. Alloyed Ohmic Contacts to GaAs;222
12.5;V. Heterojunction Contacts;232
12.6;VI. Recent Results;234
12.7;VII. Summary;235
12.8;References;236
13;AUTHOR INDEX;240
14;SUBJECT INDEX;254