Fujikawa / Nakajima / Sakurai Frontiers in Materials Research

1. Auflage 2008
ISBN: 978-3-540-77968-1
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 10, 320 Seiten

Reihe: Advances in Materials Research

New advanced materials are being rapidly developed, thanks to the progress of science. These are making our daily life more convenient. The Institute for Materials Research (IMR) at Tohoku University has greatly contributed for to the creation and development of various advanced materials and the progress in the ?eld of material science for almost a century. For example, our early research achievements on the physical metallurgy of iron carbon alloys led to the innovation of technology for making high-quality steels, which has greatly contributed to the advancement of the steel and related industry in Japan and rest of the world. IMR has focused on basic research that can be translated into applications in the future, for the bene?t of mankind. With this tradition, we have established the ?rst high-magnetic ?eld as well as low-temperature technologies in Japan, which were essential to the - vancement of magnetism and superconductivity. Recently, IMR has expanded its research in the ?eld of advanced materials including metallic glasses, - ramics, nano-structural metals, semiconductors, solar cell crystals, new op- andspin-electronicsmaterials,organicmaterials,hydrogenstoragealloys,and shaped crystals. Inthefaceofthecrisisofthedestructionoftheglobalenvironment,the- pletion of world-wide natural resources, and the exhaustion of energy sources in the twenty-?rst century, we all have an acute/serious desire for a b- ter/safer world in the future. IMR has been and will continue the pursuit of research aimed at solving global problems and furthering eco-friendly dev- opment.

Autoren/Hrsg.

Fujikawa, Yasunori

Nakajima, Kazuo

Sakurai, Toshio

Inhaltsverzeichnis

1;Preface;6
2;Contents;8
3;List of Contributors;16
4;1 Science, for the Bene.t of Mankind;24
4.1;1.1 Introduction;24
4.2;1.2 Which Bene.t? Which Mankind?;24
4.3;1.3 Mankind in Science;25
4.4;1.4 Mankind and Bene.ts in Society;26
4.5;1.5 Science, for the Bene.t of Mankind;27
4.6;1.6 Freedom in Science;27
4.7;1.7 Reform of Science;29
4.8;1.8 The Bene.ts of the Future?;30
5;Part I Novel Materials for Electronics;32
5.1;2 Trends of Condensed Matter Science: A Personal View;34
5.1.1;2.1 Introduction;34
5.1.2;2.2 Carrier Doping into Insulators;36
5.1.3;2.3 From Bulk to Local;39
5.1.4;2.4 Electronic Properties of Molecular Solids;41
5.1.5;2.5 Electronic Properties of Molecular Assemblies;47
5.1.6;2.6 Some Concrete Targets of;48
5.1.7;References;49
5.2;3 Measurements and Mechanisms of Single- Molecule Conductance Switching;52
5.2.1;3.1 Introduction;52
5.2.2;3.2 Methods;53
5.2.3;3.3 Results and Discussion;58
5.2.4;3.4 Conclusions;66
5.2.5;References;67
5.3;4 Exploration of Oxide Semiconductor Electronics Through Parallel Synthesis of Epitaxial Thin Films;72
5.3.1;4.1 Introduction;72
5.3.2;4.2 Atomically Regulated Oxide Epitaxy;74
5.3.3;4.3 Integration of Oxide Epitaxy;77
5.3.4;4.4 High Throughput Characterization;80
5.3.5;4.5 Oxide Semiconductors;83
5.3.6;4.6 Conclusion and Future Prospects;92
5.3.7;References;94
5.4;5 Epitaxial Growth and Transport Properties of High- Mobility ZnO- Based Heterostructures;100
5.4.1;References;107
5.5;6 A Scaling Behavior of Anomalous Hall Effect in Cobalt Doped TiO2;110
5.5.1;References;115
5.6;7 Synthesis, Phase Diagram, and Evolution of Electronic Properties in LixZrNCl Superconductors;116
5.6.1;References;123
5.7;8 Ambipolar Tetraphenylpyrene (TPPy) Single- Crystal Field- Effect Transistor with Symmetric and Asymmetric Electrodes;126
5.7.1;References;132
5.8;9 Bulk Zinc Oxide and Gallium Nitride Crystals by Solvothermal Techniques;134
5.8.1;9.1 Introduction;134
5.8.2;9.2 Hydrothermal Growth of ZnO;136
5.8.3;9.3 Ammonothermal Growth of Gallium Nitride;140
5.8.4;9.4 Conclusion;142
5.8.5;References;142
6;Part II Materials for Ecological and Biological Systems;144
6.1;10 High-Quality Si Multicrystals with Same Grain Orientation and Large Grain Size by the Newly Developed Dendritic Casting Method for High- Efficiency Solar Cell Applications;146
6.1.1;10.1 In-Situ Observation System to Directly Observe the Growing Interface of Si Crystals;148
6.1.2;10.2 Formation Mechanism of Parallel Twins Related to Si- Faceted Dendrite Growth;152
6.1.3;10.3 Growth of High-Quality Si Multicrystals by the Dendritic Casting Method;154
6.1.4;10.4 Solar Cells Prepared by Si Multicrystals with the Same Orientation;158
6.1.5;10.5 Quality of Si Multicrystals Grown by the Dendritic Casting Method;160
6.1.6;10.6 Summary;162
6.1.7;References;163
6.2;11 Growth of High-Quality Polycrystalline Si Ingot with Same Grain Orientation by Using Dendritic Casting Method;164
6.2.1;11.1 Introduction;164
6.2.2;11.2 Experiments;165
6.2.3;11.3 Results and Discussion;165
6.2.4;11.4 Conclusion;170
6.2.5;References;170
6.3;12 Floating Cast Method as a New Growth Method of Silicon Bulk Multicrystals for Solar Cells;172
6.3.1;12.1 Introduction;172
6.3.2;12.2 Experimental Procedure;173
6.3.3;12.3 Results and Discussion;174
6.3.4;12.4 Summary;179
6.3.5;References;179
6.4;13 Dehydriding Reaction of Hydrides Enhanced by Microwave Irradiation;180
6.4.1;13.1 Introduction;180
6.4.2;13.2 Experimental;181
6.4.3;13.3 Results and Discussion;181
6.4.4;13.4 Summary;188
6.4.5;References;189
6.5;14 Mechanically Multifunctional Properties and Microstructure of New Beta- Type Titanium Alloy, Ti- 29Nb- 13Ta- 4.6Zr, for Biomedical Applications;190
6.5.1;14.1 Introduction;190
6.5.2;14.2 Experimental Procedures;191
6.5.3;14.3 Results and Discussion;194
6.5.4;14.4 Conclusions;205
6.5.5;References;205
7;Part III Precise Control of Microscopic and Complex Systems;208
7.1;15 Atom Probe Tomography at The University of Sydney;210
7.1.1;15.1 Introduction;210
7.1.2;15.2 Field Evaporation Theory;212
7.1.3;15.3 Atom Probe Tomography;214
7.1.4;15.4 Specimen Preparation;217
7.1.5;15.5 Experimental;221
7.1.6;15.6 The Dual Beam SEM/FIB;224
7.1.7;15.7 Applications: Nanostructural Analysis of Materials;225
7.1.8;15.8 Summary;235
7.1.9;References;236
7.2;16 A Study on Age Hardening in Cu-Ag Alloys by Transmission Electron Microscopy;240
7.2.1;16.1 Introduction;240
7.2.2;16.2 Experimental Procedure;241
7.2.3;16.3 Results;242
7.2.4;16.4 Discussion;247
7.2.5;16.5 Conclusions;248
7.2.6;References;249
7.3;17 Rubber-Like Entropy Elasticity of a Glassy Alloy [ 1];250
7.3.1;17.1 Introduction;250
7.3.2;17.2 Experimental;251
7.3.3;17.3 Results and Discussions;252
7.3.4;17.4 Conclusion;256
7.3.5;References;256
7.4;18 Formation and Mechanical Properties of Bulk Glassy and Quasicrystalline Alloys in Zr- Al- Cu- Ti System;258
7.4.1;18.1 Introduction;258
7.4.2;18.2 Experimental;259
7.4.3;18.3 Results and Discussion;259
7.4.4;18.4 Conclusions;266
7.4.5;References;267
7.5;19 Fabrication and Characterization of Metallic Glassy Matrix Composite Reinforced with ZrO2 Particulate by Spark Plasma Sintering Process;268
7.5.1;19.1 Introduction;268
7.5.2;19.2 Experimental Procedures;270
7.5.3;19.3 Results;271
7.5.4;19.4 Discussion;276
7.5.5;19.5 Conclusions;277
7.5.6;References;278
7.6;20 Nucleation and Growth of Thin Pentacene Films Studied by LEEM and STM;280
7.6.1;20.1 Introduction;280
7.6.2;20.2 Experimental Setup;281
7.6.3;20.3 Results and Discussion;284
7.6.4;20.4 Conclusions;300
7.6.5;References;301
7.7;21 Mechanism of Chiral Growth of 6,13- Pentacenequinone Films on Si( 111);304
7.7.1;21.1 Introduction;304
7.7.2;21.2 Experimental and Calculation Procedures;305
7.7.3;21.3 Results and Discussion;305
7.7.4;21.4 Conclusions;315
7.7.5;References;315
7.8;22 GaN Integration on Si via Symmetry- Converted Silicon-on-Insulator;318
7.8.1;22.1 Introduction;318
7.8.2;22.2 Interface Control of GaN Film Growth on Si(111);319
7.8.3;22.3 Integration of Wurtzite GaN on Si(001) via Symmetry- Converted SOI;321
7.8.4;22.4 Conclusions;325
7.8.5;References;325
7.9;23 Functional Probes for Scanning Probe Microscopy;328
7.9.1;23.1 Introduction;328
7.9.2;23.2 Fabrication of Functional Probes;329
7.9.3;23.3 Characterization of the Functional Probes;332
7.9.4;23.4 Results and Discussions;335
7.9.5;23.5 Conclusions;342
7.9.6;References;343