Low-Dimensional Nitride Semiconductors

Erscheinungsjahr 2002
ISBN: 978-0-19-850974-5
Verlag: Oxford University Press

Buch, Englisch, Print PDF, Format (B × H): 163 mm x 241 mm, Gewicht: 977 g

Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnetic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printers and CD drives. Ultraviolet detectors will be used at a wide scale for many applications, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty first century.

Autoren/Hrsg.

Gil, Bernard

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Naturwissenschaften Physik Mechanik Klassische Mechanik, Newtonsche Mechanik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
• Naturwissenschaften Physik Elektromagnetismus Magnetismus
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Metallurgie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Metallische Werkstoffe

Inhaltsverzeichnis

- 1: Gallium nitride or The history of a scientific explosion driven by applications and markets

- 2: Nitrides as seen by a theorist

- 3: The homoepitaxial challenge for low-dimensional nitrides

- 4: HVPE - GaN quasi-substrates for nitride device structures

- 5: Growth optimization of low-dimensional nitrides by metalorganic vapor phase epitaxy and dislocation control

- 6: The growth of low-dimensional nitrides by molecular beam epitaxy

- 7: Topological defects and low-dimensional nitride layers

- 8: Excitons in GaN-based low-dimensional systems

- 9: Indium gallium nitride

- 10: The optical properties of InGaN-based quantum wells and quantum dots

- 11: Electron-phonon interactions in GaN and its low-dimensional structures

- 12: Low-dimensional nitrides: A laboratory for ultrafast physics

- 13: Opto-electronic devices based on low-dimensional nitride heterostructures

- 14: GaN-based modulation doped FETs

- 15: Mixed III-V-N semiconductors: A challenge for tomorrow?

Über Autor(innen)

Dr Bernard Gil, Goupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case Courier 074, F-34095 Montpellier Cedex 5, France. Tel: [phone], Fax: [phone]. Email: [e-mail]