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E-Book

E-Book, Deutsch, Band Volume 45, Number 2, 432 Seiten

Reihe: Physica status solidi / A.

Görlich February 16


Nachdruck 2021
ISBN: 978-3-11-248072-4
Verlag: De Gruyter
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Deutsch, Band Volume 45, Number 2, 432 Seiten

Reihe: Physica status solidi / A.

ISBN: 978-3-11-248072-4
Verlag: De Gruyter
Format: PDF
Kopierschutz: 1 - PDF Watermark



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Frontmatter -- Classification Scheme -- Contents -- Systematic List -- Original Papers -- The Effect of Implantation Temperature on the Mechanism of Misfit Dislocation Formation -- Measurement of the Electron Drift Velocity in InSb up to Fields of 800 V/cm in the Presence of Impact Ionization -- Strain Energy Controlled Shape of Crystals Forming Due to a Martensite Transformation or Decomposition -- On the Theory of Plastic Deformation with an Account of Dislocation Transformations of Several Types -- Electron Channeling in Direction of Tungsten Crystals II. Energy Range of 1000 to 2000 keV2) -- Annealing Spectrum of Cold-Worked Dilute Al-Li Alloys -- Phonon-Assisted Auger Recombination in Indirect Gap Semiconductors -- Laser Induced Gratings in CdS -- ?-Particle Irradiation Damage and Stage I Recovery in Zinc2) -- Magnetocrystalline Anisotropy of Pr(Co1_xCux)5 Compounds Experiment and Theoretical Analysis -- Plastic Deformation of Calcite Single Crystals Deformed in Compression Parallel to [111] -- Photoconductivity and the Negative Differential Photo-Effect in Sulfur-Annealed ZnS Single Crystals -- On the Ordering of Fe Atoms in FexNbS2 -- ESR Studies of a Diacetylene Polymer I. Partially Crystalline Polymer Extracts -- Evidence for the Interaction between Magnetic Domain Walls and Dislocations in High-Purity Iron from Magnetomechanical Damping Experiments -- Etude au moyen de l'ordre directionnel d'une série de ferrites de manganèse à excès de manganèse Valence des cations et répartition de ces ions sur les sites A et B -- Autoradiographic Detection of Getter Effect of Argon-Implanted Layers in Silicon -- Ultrasonic Investigation of the Phase Transitions in NH4Cl 1-x Brx Mixed Crystals -- p-n Junctions in the Surface Region of Silicon Obtained by Evaporation of Silicon in Ultrahigh Vacuum -- Lattice Location and Determination of Thermal Amplitudes of Deuterium in a-PdD0.007by Channeling -- Optical Properties of PbxSn 1-x O2Films2) -- The Mean Square Atomic Displacements and Enthalpies of Vacancy Formation in Some Semiconductors -- Coupling of Surface Acoustic Waves Propagating in Two Separated Piezoelectric Media -- A Study by Transmission Electron Microscopy and Diffraction of the Ternary Alloy System Cu2AuPd2 -- AC Conductivity of CdAs2-Based Glasses1 -- Spreading of Extrinsic Grain Boundary Dislocations in Plastically Deformed Aluminium -- Current Controlled Negative Resistance in GaAs at Low Temperatures -- Numerical Simulation of the AC Electrical Properties of Random Inhomogeneous Systems Application to Heat-Treated Polymers -- New High-Pressure Phase in [Ni(NH3)6] (CLO4)2 Detected by EPR -- Structure magnétique des MnCoSi -- ESR of Copper-Doped ?-Alumina Localization of Cu 2+ and Linewidth Effect -- Magnetic Properties of Transition Metal-Metalloid Glasses A Charge Transfer Model -- The Seebeck Effect on Nb-Doped Ti02 Rutile -- ? Dislocation Loops in Magnesium Oxide -- Regime of Contact Emission Limited Current with Weak Harmonic Distortion of Steady Bias -- Influence of Upper Laue Areas on Fine Structure of Bend Contours near a High Symmetry Axis -- Dynamic Holograms on the Superposition States of Atoms -- The Diffusion of Iron in Copper and of Nickel in Silver -- Structure of Vacuum Evaporated CdxZn 1-x S Thin Films -- Schottky Barrier on W-GUAs Contact -- Figure -- Short Notes -- Imaging of Photorefractive Effects in LiNbO3 by Double Crystal X-Ray Reflection Topography -- Comparison of Positron Annihilation and X-Ray Estimations of the Dislocation Density and Depth of Dislocation Profiles in Nickel T ransformed into Hydride and Decomposed -- The Role of Different Local Centres in the Determination of the Concentration Dependence of the Intrinsic Emission Intensity in n-Type GaAs -- Photoconductivity of p-Type CdSnP2 Single Crystals -- Spin-Lattice Relaxation at High Temperatures in Heavily Doped n-Type Silicon -- Investigation of Magnetic Preferred Directions in an Fe-Mn Base Alloy -- Hyperfine



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