E-Book, Englisch, 732 Seiten
Golio RF and Microwave Passive and Active Technologies
Erscheinungsjahr 2007
ISBN: 978-1-4200-0672-8
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
E-Book, Englisch, 732 Seiten
Reihe: The RF and Microwave Handbook, Second Edition
ISBN: 978-1-4200-0672-8
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.
Zielgruppe
Electrical, electronics, communications, wireless, and networking engineers, researchers, teachers, technologists, and students.
Autoren/Hrsg.
Weitere Infos & Material
Introduction, P. Fay
Microwave and RF Engineering, M. Golio Passive Technologies
Passive Lumped Components, A. Riddle
Passive Microwave Devices, M.B. Steer
Dielectric Resonators, S.J. Fiedziuszko
RF MEMS, K.R. Varian
Surface Acoustic Wave (SAW) Filters, D.C. Malocha
RF Coaxial Cables, M.E. Majerus
Coaxial Connectors, D. Anderson
Antenna Technology, J.B. West
Phased Array Antenna Technology, J.B. West
The Fresnel Zone Plate Antenna, J.C. Wiltse
RF Package Design and Development, J.S. Pavio Active Device Technologies
Varactors, J. Stake
Schottky Diode Frequency Multipliers, J.R. East and I. Mehdi
Transit Time Microwave Devices Transistors, R.J. Trew
Bipolar Junction Transistors (BJTs), J.C. Cowles
Heterostructure Bipolar Transistors (HBTs), W. Liu
Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), J. Costa,M. Carroll, A. Rezvani, and T. Mckay
RFCMOS Modeling & Circuit Applications, J. Costa,M. Carroll, A. Rezvani, and T. Mckay
Metal Semiconductor Field Effect Transistors (MESFETs), M.S. Shur
High Electron Mobility Transistors (HEMTs), Mishra, Chavarkar
Nitride Devices, R.J. Trew
Microwave Power Tubes, J.C. Whitaker
Monolithic Microwave IC Technology, L.P. Dunleavy
RF IC design tradeoffs (Bringing RFICs to the Market), J.C. Cowles Materials Properties
Metals, M. Golio
Dielectrics, K.F. Etzold
Ferroelectrics and Piezoelectrics, K.F. Etzold
Material Properties of Semiconductors, H.M. Harris
Appendix A: Mathematics, Symbols, and Physical Constants
Appendix B: Microwave Engineering Appendix, J.P. Wendler
