Gopal / Panchore / Johar Recent Advances in Semiconductor Device Research and Applications

1. Auflage 2026
ISBN: 979-8-89881-579-0
Verlag: De Gruyter
Format: EPUB
Kopierschutz: 0 - No protection

E-Book, Englisch, 320 Seiten

Recent Advances in Semiconductor Device Research & Applications provides a contemporary overview of next-generation semiconductor devices designed for low-power, high-speed, and high-performance electronic systems. The book focuses on emerging device architectures that address the limitations of traditional scaling, with emphasis on TFETs, advanced CMOS technologies, nanoelectronics, and biosensing applications.
It is structured from fundamental concepts to advanced research topics, beginning with semiconductor device basics and TFET principles. It then explores applications such as photosensors, carbon-based and quantum devices, ISFET biosensors, and deep submicron CMOS SRAM designs. Advanced chapters cover heterojunction TFETs, negative capacitance devices, nanostructured transistors, and low-power circuit applications.
Key Features:
-Covers next-generation semiconductor devices and architectures
-Focuses on TFETs, CMOS scaling, nanoelectronics, and biosensors
-Integrate theory with current research trends and applications
-Discussion of advanced devices, including negative capacitance and heterojunction TFETs
-Gives Practical circuit-level implementations for low-power systems

Autoren/Hrsg.

Gopal, Girdhar

Panchore, Meena

Johar, Arun Kishor

Varma, Tarun

Fachgebiete

• Technische Wissenschaften Technik Allgemein Technik: Allgemeines

Leseproben

Introduction to Emerging Semiconductor Devices

A. Vikas1, *, A. Theja1, Meena Panchore2

1 Department of Electronics and Communication Engineering, TKR College of Engineering and Technology, Hyderabad, Telangana, India

2 Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, Bihar, India

Abstract

At the moment, the sector of electronics faces huge bottlenecks in power and performance; the most influential current semiconductor technologies are the FinFETs, TFETs, and devices made of 2-D materials. FinFETs provide better electrostatic control and alleviate short-channel effects, which enable the continuous scaling of ever-smaller technology nodes. TFETs use band-to-band tunneling to realize switching at very low voltages below the thermionic threshold and thus open the path to ultra-low power operation. Two-dimensional material devices, including graphene, transition metal dichalcogenides, and black phosphorus, are known for their extreme mechanical flexibility, high carrier mobility, and good scalability. These technological advances stand to drive the new generation of neuromorphic computing, quantum devices, and ultra-low power Internet-of-Things platforms. Consequently, future research should be oriented towards long-term integration of these enabling technologies to overcome the limitations of silicon - only electronics with sustainability and high performance.

Keywords: FinFETs, TFETs, 2-D materials, IoT, High-performance devices.

* Corresponding author A. Vikas: Department of Electronics and Communication Engineering, TKR College of Engineering and Technology, Hyderabad, Telangana, India; E-mail: [e-mail]

Introduction to Emerging Semiconductor Devices

The ever-shrinking dimensions of semiconductors are exceeding the limitations of the traditional Complementary Metal Oxide Semiconductor (CMOS) technology due to inherent physical constraints. Calibrated substitutions such as FinFETs, Tunnel-FETs, spintronic devices, and transistors based on two-dimensional materials allow for enhanced electrostatic control and lower power consumption and therefore extend their usefulness in applications of electronics and optoelectronics. Although such technologies show a significant improvement in speed and efficiency, the deployment of these technologies on a large scale of integration remains a formidable challenge.

Overview of Semiconductor Technology

Semiconductor materials are the backbone of the technology we use today in our modern world, enabling and engineering devices such as computational systems, telecommunications networks, medical diagnostics, and energy conversion. These semiconductors contain the fundamental parts - transistors, diodes, integrated circuits - the evolution of which has propelled technological development through the last several decades. The unremitting desire for improved performance, lower power consumption, and miniaturization, coupled with ongoing limitations in silicon-based architectures, has driven the development of novel semiconductor devices. These innovations leverage alternative materials, new design paradigms, and advanced fabrication methods to expand the functional landscape of integrated circuits.

Key Drivers for Innovation

A plethora of drivers are responsible for contemporary advances in semiconductor technology. The main difficulty comes from the limitations of scaling; maintaining Moore's Law is bound to face physical and cost limits. Silicon transistors with sub-10 nm dimensions face increased leakage and short-channel effects, necessitating new device architectures and materials to push performance boundaries [1]. Energy efficiency is of equal importance, as demand for sustainable, portable electronics increases. The need to decrease power consumption while maintaining performance has driven the development of FinFETs, gate-all-around transistors, and complex power management schemes [2].

Emerging applications like artificial intelligence, quantum computing, and the Internet of Things are accelerating the demand for more intelligent technological solutions than traditional designs of chipsets constructed with silicon or silicon on insulator (CMOS). AI accelerators, neuromorphic architectures, and secure edge devices demand architectures that depart from traditional paradigms. Quantum computing, with superconducting qubits and semiconductor spin qubits, is at the same time leading to the advancement of materials science and fabrication methods. Consequently, there is a severe need for materials-centric innovations to drive next-generation semiconductors, given the plethora of limitations faced by silicon-based devices [3]. Arrays of advanced materials, such as graphene, transition metal dichalcogenides, and perovskites, exhibit outstanding electrical, thermal, and mechanical performance and can offer superior efficiency and new functionalities for next-generation applications [4].

Semiconductors are used in a large number of applications ranging from automotive and medical devices to renewable energy systems. Optimal performance is essential as electric vehicles, autonomous technologies, and sophisticated diagnostic tools in medicine are likely to be adopted - all of which will depend on robust semiconductor solutions. Power electronics for renewable energy and grid management are also areas of continuing development [5]. New transistor designs, energy-lighting layout, special computation, and advanced materials will determine the future of electronics in this evolving industry, guiding us through rapidly changing times.

Types of Emerging Semiconductor Devices

FinFETs and TFETs are the new semiconductor devices that realize efficiency and scalability. The 3D fin structure in FinFETs increases gate control, reducing leakage and short-channel effects, thereby enabling high-speed, low-power operation of state-of-the-art processors and AI accelerators. TFETs apply quantum tunneling for carrier transport to realize steep subthreshold slopes below 60mV/decade, with ultra-low-power consumption optimally suitable for IoT devices and biosensors. Such deep-subthreshold-slope TFETs have much lower operating voltages than MOSFETs, thereby reducing power consumption by orders of magnitude. Heterojunction-based TFETs boost performance even further by offering higher energy efficiency. FinFET and TFET are the two most important devices to transcend the scaling limitations of semiconductors. These will open the door to future low-power and high-performance electronics.

2D material devices and spintronics are revolutionizing semiconductor technology. 2D materials like graphene and MoS2 are highly mobile, flexible, and bandgap tunable. These characteristics facilitate ultra-thin and high-speed transistors for flexible optoelectronics and electronics. They also eliminate short-channel effects, which are essential for next-generation devices. Spintronics utilizes electron spin rather than charge, allowing high-speed, low-power, and non-volatile memory. Technologies such as STT-MRAM provide better endurance and radiation hardness. Spintronic transistors are being investigated for low-power computing and AI. The combination of 2D materials and spintronics increases device performance and efficiency. These technologies are transforming the future of quantum computing and neuromorphic architectures. Fig. (1) shows a detailed overview of the types of emerging semiconductor devices.

In this chapter, the major emerging semiconductor devices such as FinFETs, TFETs, Spintronic devices, and 2-D material devices have been explored. This chapter also provides an outline of the working of these devices, along with their applications in the scientific world.

Fig (1))
Evolution of modern nano-scale devices [5].

FinFETs (Fin Field-Effect Transistors)

FinFETs have revolutionized transistor design by introducing a three-dimensional fin-shaped channel. The architecture shown in Fig. (2) has better electrostatic control, which reduces leakage and increases efficiency. In a FinFET, the gate surrounds a thin slice of undoped silicon called a “fin” where current flows from one end of the fin to the other. The wraparound feature of the gate enhances gate control over the channel, reducing short-channel effects and, hence, leakage currents [6]. Thus, a FinFET has better gate control; the channel is controlled from its two sides. This reduces short-channel effects, leading to lower drain-to-source leakage current in the off state and a higher intrinsic gain. The current in FinFETs flows through three faces of the fin. Therefore, the equivalent channel width is W = WF + 2HF, where WF is the width of the fin, and HF is its height. Typically, WF = 6 nm and HF = 50...