Grasser / Selberherr Simulation of Semiconductor Processes and Devices 2007

SISPAD 2007
1. Auflage 2007
ISBN: 978-3-211-72861-1
Verlag: Springer-Verlag
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 463 Seiten

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Autoren/Hrsg.

Grasser, Tibor

Selberherr, Siegfried

Inhaltsverzeichnis

1;Preface;5
2;Contents;7
3;Nanomanufacturing Technology and Opportunities Through Physically- Based Simulation;16
4;Atomistic Modeling of Defect Diffusion in SiGe;24
5;Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches;28
6;Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm- Node pMOSFETs;44
7;Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants;48
8;Modeling of Re-Sputtering Induced Bridge of Tungsten Bit- Lines for NAND Flash Memory Cell with 37nm Node Technology;60
9;Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation ( DCT);64
10;Thin Body Effects to Suppress Random Dopant Fluctuations in Nano- Scaled MOSFETs;108
11;Impact of Shear Strain and Quantum Confinement on < 110> Channel nMOSFET with High- Stress CESL;120
12;Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/ D for pFETs;124
13;Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner;128
14;3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor;132
15;A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/ Slip Functions for Scaled Device Design Phase;148
16;Modeling Study of Ultra-Thin Ge Layers Using Tight- Binding, LCBB and kp Methods;160
17;A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full- Band Tight- Binding Approach;176
18;Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfOi;180
19;Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures;204
20;Monte Carlo Study on Number of Scattering Events for Quasi- Ballistic Transport in MOSFETs;212
21;Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method;220
22;Transport in Silicon Nanowire and Single-Electron Transistors;224
23;Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors;235
24;Numerical Simulation of Field Emission in the Surface Conduction Electron- Emitter Display;247
25;Hopping Transport of Electrons via Si-Dot;263
26;Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method;267
27;Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami;275
28;Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping;279
29;Simulation of AlGaN/GaN HEMTs' Breakdown Voltage Enhancement Using Grating Field Plates;291
30;Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AIN Interlayer;295
31;Compact Modeling for New Transistor Structures;299
32;Compact Double-Gate MOSFET Model Correctly Predicting Volume- Inversion Effects;303
33;Modeling NAND Flash Memories for Circuit Simulations;307
34;Calibrated Hydrodynamic Simulation of Deeply-Scaled Well- Tempered Nanowire Field Effect Transistors;319
35;Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes;327
36;A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire;335
37;Maxwell Equations on Unstructured Grids Using Finite- Integration Methods;347
38;Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories;359
39;EMC Simulation of THz Emission from Semiconductor Devices;367
40;Enhanced Band- to- Band Tunneling- Induced- Hot- EIectron Injection in P- Channel Flash by SiGe Channel and HfOi Tunnel Dielectric;371
41;Challenges in 3D Process Simulation for Advanced Technology Understanding;375
42;Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature;379
43;Hot-Carrier Behaviour of a 0.35 jim High-Voltage n- Channel LDMOS Transistor;383
44;Dynamic Monte Carlo Simulation of an Amorphous Organic Device;387
45;Charge Injection Model in Organic Light- Emitting Diodes Based on a Master Equation;391
46;Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors;395
47;Asymmetrical Triple-Gate FET;403
48;The Optimization of Low Power Operation SRAM Circuit for 32nm Node;411
49;Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation;415
50;Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On- Resistance vs. Overlap Capacitance in ( 100) and ( llO)- Oriented MOSFETs;419
51;Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism;423
52;Modeling of Deposition During CsFs/CO/Oi/Ar Plasma Etching Using Topography and Composition Simulation;439
53;Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes;443
54;Atomistic study of Metal/High-K interface;451
55;Ab- initio Calculations of Indium Migration in Uniaxial Strained Silicon;455