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E-Book, Englisch, 359 Seiten, E-Book
Hanbücken / Müller / Wehrspohn Mechanical Stress on the Nanoscale
1. Auflage 2011
ISBN: 978-3-527-63955-7
Verlag: Wiley-VCH
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
Simulation, Material Systems and Characterization Techniques
E-Book, Englisch, 359 Seiten, E-Book
ISBN: 978-3-527-63955-7
Verlag: Wiley-VCH
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
Autoren/Hrsg.
Weitere Infos & Material
Part 1: Fundamentals of stress and strain on the nanoscale
- Elastic strain relaxation: thermodynamics and kinetics
- Fundamentals of stress and strain at the nanoscale level: Toward nanoelasticity
- Onset of plasticity in crystalline nanomaterials
- Relaxations on the nanoscale: an atomistic view by numerical simulations
Part 2: Model Systems with Stress-Engineered Properties
- Accommodation of lattice misfit in semiconductor heterostructure nanowires
- Strained silicon nanodevices
- Stress-driven nanopatterning in metallic systems
- Semiconductor templates for the fabrication of nano-objects
Part 3: Characterization techniques of measuring stresses on the nanoscale
- Strain analysis in transmission electron microscopy: How far can we go?
- Determination of elastic strains using electron backscatter diffraction in the scanning electron microscope
- X-ray diffraction analysis of elastic strains at the nanoscale
- Diffuse X-ray scattering at low-dimensional structures in the system SiGe/Si
- Direct measurement of elastic displacement modes by grazing incidence X-ray diffraction
- Submicrometer-scale characterization of solar silicon by Raman spectroscopy
- Strain-Induced Nonlinear Optics in Silicon
Part I
Fundamentals of stress and strain on the nanoscale
- Elastic strain relaxation: thermodynamics and kinetics
- Elasticity for nanoscale objects
- Onset of plasticity in crystalline nanomaterials
- Relaxations on the nanoscale: an atomistic view by numerical simulations
Part II
Model systems with stress-engineered properties
- Accommodation of lattice misfit in semiconductor heterostructure nanowires
- Strained Silicon Nanodevices
- Stress in heteroepitaxy as a tool to tailor magnetic nanostructures
- Self-organized Nanopatterning and Growth on Metallic Surfaces
- Semiconductor-templates for anisotropic fabrication of nano-objects
Part III
Characterisation techniques of measuring stresses on the nanoscale
- Advances and limits of transmission electron microscopy (TEM) for measuring strain at the nanoscale
- Determination of Elastic Strains using Electron Backscatter Diffraction in the Scanning Electron Microscope
- X-ray Diffraction analysis of elastic strains at the nanoscale
- Diffuse x-ray scattering at low-dimensional nanostructures
- Direct observation of elastic displacement modes by grazing-incidence X-ray diffraction
- Solar Silicon characterized by Raman Spectroscopy: From Micro- to Nanometer Scale Resolution
- Strain induced nonlinear optics in silicon




