Heteromagnetic Microelectronics

Microsystems of Active Type
1. Auflage 2010
ISBN: 978-1-4419-6002-3
Verlag: Springer-Verlag
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 506 Seiten

Autoren/Hrsg.

Inhaltsverzeichnis

1;Foreword
;6
2;Introduction;8
3;Contents;14
4;Abbreviation;20
5;Symbols;24
6;Part I Experimental Investigation of the Properties of Oscillating Heteromagnetic Structures at Low, Medium, and High Power Levels;26
6.1;1 Spectra of Regular and Noise Signals;27
6.1.1;1.1 General Remarks: Generalized Models;27
6.1.2;1.2 Regimes of Low and Middle Power Levels;40
6.1.3;1.3 Regimes of High Power Level;46
6.1.3.1;1.3.1 Control by Magnetic Fieldand High-Frequency Signals Power;46
6.1.3.2;1.3.2 Multifunctional Properties of Powerful Heteromagnetic Oscillators;53
6.1.4;1.4 Signal Spectra of Heteromagnetic Interactions on High Power Levels;69
6.2;2 Properties of Structures with Ferrites of Different Magnetizations;84
6.2.1;2.1 General Remarks;84
6.2.2;2.2 Structures with Ferrite KG-8;85
6.2.2.1;2.2.1 Angle of Orientation of FMCR =45;90
6.2.2.2;2.2.2 Angle of Orientation of FMCR =90;94
6.2.3;2.3 Structures with Ferrite KG-15;99
6.2.3.1;2.3.1 Angle of Orientation of FMCR =0;99
6.2.3.2;2.3.2 Angle of Orientation of FMCR =45;106
6.2.3.3;2.3.3 Angle of Orientation of FMCR =90;110
6.2.4;2.4 Structures with Ferrite KG-50;114
6.2.4.1;2.4.1 Angle of Orientation of FMCR =0;114
6.2.4.2;2.4.2 Angle of Orientation of FMCR =45;118
6.2.4.3;2.4.3 Angle of Orientation of FMCR =90;122
6.2.5;2.5 Structures with Ferrites KG-65 and KG-140;125
6.2.5.1;2.5.1 Angle of Orientation of FMCR =90;125
6.2.6;2.6 Generalization of Experimental Data;128
6.3;3 Control Over Energy and Spectral Characteristics;130
6.3.1;3.1 Control Over Characteristics of Spectral-Pure Signals;130
6.3.1.1;3.1.1 Structures with Various Orientations in a Magnetic Field;130
6.3.1.1.1;3.1.1.1 FMCR from KG-8;130
6.3.1.1.2;3.1.1.2 FMCR of KG-15;133
6.3.1.1.3;3.1.1.3 FMCR of KG-50;134
6.3.1.2;3.1.2 Structures with Ferrites of Various Magnetization;137
6.3.1.2.1;3.1.2.1 FMCR Orientation Angle =0;138
6.3.1.2.2;3.1.2.2 FMCR Orientation Angle =45;141
6.3.1.2.3;3.1.2.3 FMCR Orientation Angle =90;144
6.3.2;3.2 Control Over Characteristics of Pseudonoise and Noise Signals;147
6.3.2.1;3.2.1 Structures with Various Orientations in a Magnetic Field;147
6.3.2.1.1;3.2.1.1 FMCR of KG-8;147
6.3.2.1.2;3.2.1.2 FMCR of KG-15;150
6.3.2.1.3;3.2.1.3 FMCR of KG-50;152
6.3.2.2;3.2.2 Structures with Ferrites of Various Magnetization;154
6.3.2.2.1;3.2.2.1 FMCR Orientation Angle =0;154
6.3.2.2.2;3.2.2.2 FMCR Orientation Angle =45;156
6.3.2.2.3;3.2.2.3 FMCR Orientation Angle =90;160
6.3.3;3.3 Control Over Characteristics of Evenly Spaced Grids of Signal Frequencies;162
6.3.3.1;3.3.1 Structures with Various Orientations in a Magnetic Field;162
6.3.3.1.1;3.3.1.1 FMCR of KG-8;162
6.3.3.1.2;3.3.1.2 FMCR of KG-15;163
6.3.3.2;3.3.2 Structures with Ferrites of Various Magnetization;165
6.3.3.2.1;3.3.2.1 FMCR Orientation Angle =0;165
6.3.3.2.2;3.3.2.2 FMCR Orientation Angle =90;169
6.4;4 Generalization Control Characteristics in Generative Structures;171
6.4.1;4.1 Structure Characteristics with Various Orientations;171
6.4.1.1;4.1.1 Structures with KG-8 FMCR;171
6.4.1.2;4.1.2 Structures with KG-15 FMCR;172
6.4.1.3;4.1.3 Structures with KG-50 FMCR;175
6.4.2;4.2 Structure Characteristics with Various Magnetizations;177
6.4.2.1;4.2.1 FMCR Orientation Angle =0;179
6.4.2.2;4.2.2 FMCR Orientation Angle =45;181
6.4.2.3;4.2.3 FMCR Orientation Angle =90;181
6.4.3;4.3 Physical Mechanisms of Heteromagnetic Interactions;194
7;Part II Process Modeling in Heteromagnetic Structures;195
7.1;5 Heteromagnetic Oscillator;196
7.1.1;5.1 Equivalent Circuit of a High-Power Bipolar Transistor;196
7.1.2;5.2 Modeling of Static Characteristics of a Powerful Bipolar Transistor;202
7.1.3;5.3 Basic Model Equations;203
7.1.4;5.4 Calculation of Characteristics of Powerful Heteromagnetic Microwave Oscillators;206
7.1.5;5.5 Modeling of Complicated Regimes;212
7.2;6 Multicircuit Model of a Multifunctional Heteromagnetic Oscillator;219
7.2.1;6.1 Equivalent Circuit;219
7.2.2;6.2 Model Equations;222
7.2.3;6.3 Methods of Finalizing Equivalent Parameters of Transistor;225
7.2.4;6.4 Equivalent Circuit of a Multifunctional Heteromagnetic Oscillator;232
7.2.5;6.5 Oscillating Modes of Subharmonic Constituents;234
7.2.6;6.6 Oscillating Modes of Evenly Spaced Frequencies Spectra;243
7.2.7;6.7 Regimes of Pseudonoise Signals;246
8;Part III Calculation of Parameters of Heteromagnetic Structures;255
8.1;7 Calculation of Parameters of Transistors, Coupling Elements, Magnetotransistors in a Frequency Band Below 100GHz;256
8.1.1;7.1 Bipolar Transistor in Omnirange, UHF Range;256
8.1.1.1;7.1.1 General Data on Programs;257
8.1.1.2;7.1.2 Test Task;260
8.1.2;7.2 FET in Omnirange, UHF Range;261
8.1.2.1;7.2.1 Determination of Parameters of a FET Model with Schottky Gate;261
8.1.2.2;7.2.2 Method for Determination of Transistor Parameters;264
8.1.2.3;7.2.3 Test Task;265
8.1.3;7.3 Powerful FET in EHF Range;268
8.1.3.1;7.3.1 Model of EHF Transistor of HEMT-1;269
8.1.3.2;7.3.2 Model of EHF Transistor of HEMT-2;271
8.1.4;7.4 Magnetoelectronic Elements of LPL;272
8.1.4.1;7.4.1 Coupling Element in Omnirange, UHF Range;273
8.1.4.2;7.4.2 Coupling Element in Microwave Frequency, EHF Range;277
8.1.5;7.5 Powerful Bipolar Transistor in Microwave Frequency Range;279
8.1.6;7.6 Powerful Bipolar Heteromagnetic Transistor in Microwave Frequency Range;283
8.1.7;7.7 Powerful Magneto-FET in a Frequency Band Below 30GHz;290
8.1.8;7.8 Powerful Magneto-FET in EHF Range;293
8.2;8 Calculation of Thermal Conditions of Magnetotransistors in Continuous and Pulse Modes;296
8.2.1;8.1 General Remarks;296
8.2.2;8.2 Nonstationary and Temperature Field of Powerful Magneto-FET in Pulse Mode;298
8.2.3;8.3 Stationary Thermal Resistance of Powerful Magneto-FET with Squared Shape;301
8.2.4;8.4 Stationary Thermal Resistance of Powerful Magneto-FET in the Form of Multilayer Cylinder;302
9;Part IV Applied Aspects;305
9.1;9 Influence of External Factors;306
9.1.1;9.1 General Remarks;306
9.1.2;9.2 Estimation of Static Load;308
9.1.3;9.3 Strength of Beam-Type Bonds;309
9.1.4;9.4 Strength of Glue Fixation;310
9.1.5;9.5 Strength of Screw Connection;311
9.1.6;9.6 Resistivity to Dynamic Forces;312
9.1.7;9.7 Resistivity to Pressure Changes;313
9.1.8;9.8 Resistivity to Temperature Excitations;314
9.1.9;9.9 Resistivity of HMS to External Factors;316
9.1.10;9.10 Estimation of Jam Protection;316
9.2;10 Multifunctional Generation and Boosting;324
9.2.1;10.1 Generation of Increased Continued and Pulse Power Levels in Omnirange, UHF Ranges;324
9.2.2;10.2 Signal Multiplication in Omnirange, UHF Range;326
9.2.3;10.3 Generation and Multiplication of Signals of Lowand High Power Levels in UHF and Microwave Frequency Ranges;327
9.2.4;10.4 Generation of Powerful Signals in the EHF Range;330
9.3;11 Multifunctional Frequency Synthesizers;334
9.3.1;11.1 General Data;334
9.3.2;11.2 Oscillators Operated by Magnetic Field in FrequencySynthesizers;339
9.3.3;11.3 Frequency Synthesizers of Indirect Synthesis Based on APLC;341
9.3.4;11.4 Oscillator Operated by Magnetic Field;343
9.3.4.1;11.4.1 Experimental MCG Research;346
9.3.5;11.5 Multifunctional Frequency Synthesizers Based on APLC Using GSM;348
9.3.6;11.6 Multifunctional Operated Frequency Synthesizer Based on Transistor BFR 90;349
9.3.7;11.7 Transient Processes Inside Synthesizers with APLC;352
9.3.8;11.8 Output Characteristics of GSM;353
9.3.9;11.9 Pseudorandom Working Frequency Tuning and Phase-Shift Keying of Pseudonoise SignalUsing GSM;361
9.3.9.1;11.9.1 GSM with PWFT Function;361
9.3.9.2;11.9.2 GSM with PSK PS Function;363
9.3.10;11.10 Discrete Phaser for PSK PS;364
9.3.11;11.11 Frequency Synthesizers on Generative Magnetotransistors;374
9.4;12 Vector Sensors and Magnetometers with Heteromagnetic Interaction;375
9.4.1;12.1 Investigations of Properties of Double-Coil Coupling Elements;375
9.4.2;12.2 Magnetosensitive Active Oscillator;378
9.4.3;12.3 Projection Element of Magnetosensitive Sensor;383
9.4.4;12.4 Magnetosensitive One-Coordinate Sensor;388
9.4.5;12.5 Measurement Procedures of Ferrite Microresonator Parameters;394
9.4.5.1;12.5.1 Determination of Equilibrium Orientation of Magnetization for Cubic Ferrite Monocrystals;394
9.4.5.2;12.5.2 Determination of Equilibrium Orientation of Magnetization of Spheric Specimen;396
9.4.6;12.6 Experimental Investigation of Parameters of a Vector Magnetoelectronic Sensor;400
9.4.7;12.7 Determination of Earth's Magnetic Field Vector by a Heteromagnetic Sensor;408
9.4.8;12.8 Algorithms and Circuit Engineering Solutions for Investigations of Frequency Signal Responses from a Heteromagnetic Sensor;411
9.5;13 Low-Noise Amplifiers on Magnetotransistors Below 40GHz;418
9.5.1;13.1 Power Level and Dynamic Range. Choice of a Linear Transistor Model for Calculation;418
9.5.2;13.2 Choice and Substantiation of Coupling Element for a Frequency Band Below 40GHz;420
9.5.3;13.3 Projection of Magnetoelectronic One-Stage Amplifier on Magnetotransistor;423
9.6;14 Magnetotransistors and Their Technologies;433
9.6.1;14.1 Magneto-FET of High Power Level in Intense and Generator Modes;433
9.6.2;14.2 Bipolar Magnetotransistors in Intense Mode on High Power Level in UHF Range;437
9.6.3;14.3 Experimental Investigation of Bipolar Magnetotransistors Based on KT9175A Crystals;444
9.6.4;14.4 Magneto-FET in EHF Range in Boost Regime;446
9.6.5;14.5 FET and Bipolar Magnetotransistor in Microwave Frequency Range of High Power Level;453
9.6.5.1;14.5.1 Magneto-FET of High Power Level;453
9.6.5.2;14.5.2 Bipolar Magnetotransistors of High Power Level;454
9.6.6;14.6 Ferrite Semiconductor Structures in Regime of Oscillation Conversion in a Frequency Band 100–1,000GHz;458
9.6.7;14.7 Manufacturing Methods;463
9.6.7.1;14.7.1 FET Parameters;463
9.6.7.2;14.7.2 Technological Peculiarities of Manufacturing of GaAs FET;465
9.6.8;14.8 Manufacturing Methods of an Integral Magnetosemiconductor Device;469
9.6.9;14.9 Multivariate Vector Sensors of Mechanical DynamicQuantities;474
9.6.10;14.10 Multivariate Vector Sensors of Electromagnetic and Mechanical Physical Quantities for New Generations of Metrical, Checking, and Tested Microsystems, Including Intellectual Ones;480
9.7;15 Nonlinear Effects in Magnetotransistors and Their Elements;488
9.7.1;15.1 Peculiarities of Nonlinear Processes in Ferromagnetics;488
9.7.2;15.2 Peculiarities of Ferromagnetic Resonancein Structures with First-order Nonlinearity;489
9.7.3;15.3 Experimental Observations of Nonlinear Ferromagnetic Resonance;490
9.7.4;15.4 Generation of Signals in Regime of Nonlinear Ferromagnetic Resonance;493
9.7.5;15.5 Saturation Mode of Principal Resonance;495
9.7.6;15.6 Power Limiting in FMCR;496
10;Conclusion;502
11;References;504
12;Index;508