E-Book, Englisch, 261 Seiten, eBook
Jungemann / Meinerzhagen Hierarchical Device Simulation
2003
ISBN: 978-3-7091-6086-2
Verlag: Springer Wien
Format: PDF
Kopierschutz: 1 - PDF Watermark
The Monte-Carlo Perspective
E-Book, Englisch, 261 Seiten, eBook
Reihe: Computational Microelectronics
ISBN: 978-3-7091-6086-2
Verlag: Springer Wien
Format: PDF
Kopierschutz: 1 - PDF Watermark
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation • Balance Equations • The Microscopic Relaxation Time • Fluctuations in the Steady-State • References The Monte-Carlo Method Basic Monte-Carlo Methods • The Monte-Carlo Solver of the Boltzmann Equation • Velocity Autocorrelation Function • Basic Statistics • Convergence Estimation • References Scattering Mechanisms Phonon Scattering • Alloy Scattering • Impurity Scattering • Impact Ionization by Electrons • Surface Roughness Scattering • References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon • Basic Properties of the Band Structure of Strained SiGe • k-Space Grid • Calculation of the Density of States • Mass Tensor Evaluation • Particle Motion in Phase-Space • Selection of a Final State in k-Space • References Device Simulation Device Discretization • Band Edges • Poisson Equation • Self-Consistent Device Simulation • Nonlinear Poisson Equation • Nonself-Consistent Device Simulation • Statistical Enhancement • Terminal Current Estimation • Contact Resistance • Normalization of Physical Quantities • References Momentum-Based Transport Models The Hydrodynamic Model • Small-Signal Analysis • Noise Analysis • The Drift-Diffusion Model • Transport and Noise Parameter Simulation • References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error • In-Advance CPU Time Estimation • References Results N+ NN+ and P+ PP+ Structures • MOSFETs • SiGe HBTs Subject Index
