Kissinger / Pizzini Silicon, Germanium, and Their Alloys

Growth, Defects, Impurities, and Nanocrystals
Erscheinungsjahr 2015
ISBN: 978-1-4665-8665-9
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 431 Seiten

This book emphasizes defects in silicon and germanium and provides a review of Si and Ge nanocrystals. It focuses on growth problems, critical defects, impurities effects, potential of Si and Ge nanotechnologies, and materials characterization. It discusses recent advances in point defect knowledge in silicon and germanium and explores growth technologies of silicon and silicon-germanium alloys where improvement is necessary or critical. It also covers extended defects in silicon as light-emitting sources, modern spectroscopical approaches to the characterization of materials, and recent advances on preparation and characterization of Si and Ge nanocrystals.

Autoren/Hrsg.

Kissinger, Gudrun

Pizzini, Sergio

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie

Inhaltsverzeichnis

Modern aspects of CZ and mc Silicon Crystal Growth. Growth and Characterization of Silicon-Germanium Alloy Crystals. Silicon and Germanium Nanocrystals. Self-interstitials in Si and Ge. Vacancies in Si and Ge. Self- and Dopant Diffusion in Si, Ge and Its Alloys. Hydrogen in Silicon. Point Defect Complexes. Electrical Activity of Dislocations. Silicon Defects Identification by Spectroscopical Techniques.