Maiti / Chattopadhyay / Bera Strained-Si Heterostructure Field Effect Devices

Erscheinungsjahr 2010
ISBN: 978-1-4200-1234-7
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 440 Seiten

Reihe: Series in Material Science and Engineering

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.

After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers. The book also describes silicon hetero-FETs in SiGe and SiGeC material systems, MOSFET performance enhancement, and process-induced stress simulation in MOSFETs.

From substrate materials and electronic properties to strained-Si/SiGe process technology and devices, the diversity of R&D activities and results presented in this book will no doubt spark further development in the field.

Zielgruppe

Researchers and professionals in device physics, semiconductor physics, device electronics, microelectronics, circuits, and electrical engineering.

Autoren/Hrsg.

Maiti, C.K

Chattopadhyay, S

Bera, L.K

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

INTRODUCTION

Heterostructure Field-Effect Devices
Substrate Engineering
Gate Dielectrics on Engineered Substrates

Strained-Si Technology: Process Integration

Nonclassical CMOS Structures
Strain-Engineered Hetero-FETs: Modeling and Simulation

STRAIN ENGINEERING IN MICROELECTRONICS

Stress Induced during Manufacturing

Global vs. Local Strain

Substrate-Induced Strain
Process-Induced Stress
Stress/Strain Analysis

STRAIN-ENGINEERED SUBSTRATES

Epitaxy
Heteroepitaxy and Strain Control
Engineered Substrates: Technology
Characterization of Strained Layers
Engineered Substrates

ELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES

Substrate-Induced Strained-Si
Carrier Lifetime
Mobility: Thickness Dependence
Mobility: Temperature Dependence

Diffusion in Strained-Si
Process-Induced Strained-Si
Uniaxial vs. Biaxial Strain Engineering

GATE DIELECTRICS ON ENGINEERED SUBSTRATES
Strained-Si MOSFET Structures

Thermal Oxidation of Strained-Si

Rapid Thermal Oxidation
Plasma Nitridation of Strained-Si

Effect of Surface Roughness

Effect of Strained-Si Layer Thickness

High-k Gate Dielectrics on Strained-Si
Gate Dielectrics on Ge

HETEROSTRUCTURE SiGe/SiGeC MOSFETS

SiGe/SiGeC:Material Parameters
SiGe Hetero-FETs: Structures and Operation
SiGe p-MOSFETs on SOI
SiGeC Hetero-FETs

SiGe-Based HEMTs
Design Issues

STRAINED-Si HETEROSTRUCTURE MOSFETS

Operating Principle
Uniaxial Stress: Process Flow

Strained-Si MOSFETs with SiC-Stressor

Biaxial Strain: Process Flow

Scaling of Strained-Si MOSFETs
Strained-Si MOSFETs: Reliability

Industry Example: TSMC

Industry Example: AMD

MODELING AND SIMULATION OF HETERO-FETS

Simulation of Hetero-FETs

Modeling of Strained-SiMaterial Parameters

Simulation of Strained-Si n-MOSFETs
Characterization of Strained-Si Hetero-FETs

TCAD: Strain-Engineered Hetero-FETs

SPICE Parameter Extraction
Performance Assessment

Summaries and References appear in each chapter.