Mishra / Singh Semiconductor Device Physics and Design

1. Auflage 2007
ISBN: 978-1-4020-6481-4
Verlag: Springer Netherland
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 560 Seiten, Web PDF

Reihe: Engineering

Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.

Zielgruppe

Graduate

Autoren/Hrsg.

Mishra, Umesh

Singh, Jasprit

Inhaltsverzeichnis

Structural Properties of Semiconductors.- Electronic levels in semiconductors.- Charge transport in materials.- Junctions in Semiconductors: P-N Diodes.- Semiconductor Junctions.- Bipolar Junction Transistors.- Temporal Response Of Diodes and Bipolar Transistors.- Field Effect Transistors.- Field Effect Transistors: MOSFET.- Coherent Transport and Mesoscopic Devices.

Über Autor(innen)

Dr. Umesh K. Mishra is Professor at UC Santa Barbara in the Department of Electrical and Computer Engineering. His areas of focus include: Electronics and Photonics: high-speed transistors, semiconductor device physics, quantum electronics, optical control, design and fabrication of millimeter-wave devices, in situation processing and integration techniques.  Professor Mishra joined the College's ECE Department in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Semiconductors and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. In 1989 Dr. Mishra received the Presidential Young Investigator Award from the National Science Foundation. In 1992 he received the Young Scientist of the Year Award from the International Symposium on GaAs and Related Compounds. He was elected as a Fellow of IEEE in 1995.

Jasprit Singh joined the University of Michigan, Ann Arbor, in 1985 and he is Professor in the Electrical Engineering and Computer Science department.