Morkoc Handbook of Nitride Semiconductors and Devices

Vol. 2: Electronic and Optical Processes in Nitrides
1., Volume 2
ISBN: 978-3-527-62842-1
Verlag: Wiley-VCH
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 847 Seiten, E-Book

Reihe: Handbook of Nitride Semiconductors and Devices

Die Forschung zu Gallium-Nitriden (GaN) und ihnen ähnlichen Verbindungen bzw. zu Halbleiterelementen hat sich in den letzten Jahren rasant entwickelt. Dieser zweite Band des dreibändigen Handbuches widmet sich optischen und elektronischen Eigenschaften von Nitrid-Materialien.

Autoren/Hrsg.

Morkoc, Hadis

Inhaltsverzeichnis

1 Metal Contacts to GaN and Processing
1.1 A Primer for Semiconductor-Metal Contacts
1.2 Current Flow in Metal-Semiconductor Junctions
1.3 GaN Schottky Barriers for High-Voltage Rectifiers
1.4 Ohmic Contact Resistance
1.5 Determination of the Contact Resistivity
1.6 Ohmic Contacts to GaN
1.7 Structural Analysis of Ohmic Contacts on GaN
1.8 Etching Techniques for III Nitrides
1.9 Implant Isolation
1.10 Process Damage
 
2 Determination of Impurity and Carrier Concentrations
2.1 Impurity Binding Energy
2.2 Conductivity Type: Hot Probe and Hall Measurements
2.3 Semiconductor Statistics, Density of States, and Carrier Concentration
2.4 Capacitance-Voltage Measurements
 
3 Carrier Transport
3.1 Prelude
3.2 Carrier Scattering
3.3 Calculated Mobility of GaN
3.4 Scattering at High Fields
3.5 Measurements of Mobility and Associated Fundamentals
3.6 Multiband Effects and Mixed Conductivity
3.7 van der Pauw Method
3.8 Quantum Hall Effect - Shubnikov-de Haas
3.9 Measured Mobility in n-type GaN
3.10 Measurement of High-Field Electron Velocity in n-Type GaN
3.11 Carrier Transport in p-Type GaN
3.12 Carrier Transport in InN
3.13 Carrier Transport in AlN
3.14 Transport in Unintentionally Doped and High-Resistivity GaN
3.15 Carrier Transport in Alloys
3.16 Two-Dimensional Transport in n-Type GaN
3.17 Interface Roughness Scattering
3.18 Quantum Transport in AlGaN/GaN 2DEG
3.19 Observations
 
4 The p-n Junction
4.1 Heterojunctions
4.2 Band Discontinuities
4.3 Electrostatic Characteristics of p-n Heterojunctions
4.4 Current-Voltage Characteristics of p-n Junctions
4.5 I-V Characteristics of Ideal GaN-Based p-n Junctions
4.6 I-V Characteristics of GaN-Based p-n Junctions
4.7 High-Voltage Blocking GaN and AlGaN-Based p-n Junctions
 
5 Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures
5.1 Basics of Photoluminescence
5.2 Band-to-Band Transitions
5.3 Optical Transitions in GaN
5.4 Group-II Element Related Transitions
5.5 Blue Luminescence Band in Undoped GaN
5.6 Surface-Related Blue Luminescence in Etched GaN
5.7 Optical Properties of GaN Doped with Rare Earths
5.8 Optical Properties of Alloys
5.9 Optical Properties of Nitride Heterostructures
5.10 Quantum Dots
5.11 Intraband or Intersubband Transitions in GaN/AlGaN Quantum Wells
5.12 Nonlinear Optical Properties of III-Nitrides

Über Autor(innen)

Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.