Queisser Festkörper Probleme

Plenary Lectures of the Divisions Semiconductor Physics, Surface Physics, Low Temperature Physics, High Polymers, Thermodynamics and Statistical Mechanics, of the German Physical Society, Münster, March 19-24, 1973
1. Auflage 2013
ISBN: 978-1-4831-5767-2
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 404 Seiten, Web PDF

Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper reviews the findings on experiments on the magnetic, optical, electrical, and structural properties of layer type crystals, particularly metal dichalcogenides. This book then discusses the van der Waals attraction using semi-classical methods to explain the correlation in different atoms. This discussion explains the application of the Schrodinger formalism and the Maxwell equations. One paper also reviews the energy distribution of electrons emitted from solids after ultraviolet radiation or monochromatic X-ray exposure. Another paper reviews the use of clean silicon surfaces associated with electron emitters showing ''negative electron affinity.'' A paper then reviews the mechanism of charge-transfer devices, with emphasis on the physics of the transfer processes that happen in surface charge-coupled devices or bulk-charge-couple devices. This compendium will prove useful for materials physicists, scientists, and academicians in the field of advanced physics.

Autoren/Hrsg.

Queisser, H. J.

Inhaltsverzeichnis

1;Front Cover;1
2;Festkörper Probleme XIII: Advances in Solid State Physics;4
3;Copyright Page;5
4;Table of Contents;7
5;Foreword;6
6;Chapter 1. Electronic Properties of Two Dimensional Solids: The Layer Type Transition Metal Dichalcogenides;10
6.1;1. Introduction;10
6.2;2. Optical properties;11
6.3;3. Band structure;18
6.4;4. Excitons, thickness effects, and screening of excitons;23
6.5;5. Electrical, magnetic and superconducting properties;26
6.6;6. Intercalate compounds with organic molecules;27
6.7;7. Intercalates with alkali and alkaline earth metals;34
6.8;8. Intercalates with transition metals;35
6.9;10. Conclusions;36
6.10;References;37
7;Chapter 2. Electronic Properties of One-Dimensional Solid State Systems;40
7.1;1. Introduction;40
7.2;2. Chemistry and Structural Chemistry of 1-D potentially metallic systems;42
7.3;3. Physical Concepts for the Description of 1-D Potentially Metallic Systems;48
7.4;4. Experimental Situation;54
7.5;5. Summary and Outlook;63
7.6;References;65
8;Chapter 3. Compound Semiconductor Alloys;68
8.1;1. Introduction;68
8.2;2. Alloy Band Structure;69
8.3;3. The Alloy Sample and Measurement of Its Band Structure;78
8.4;4. Applications;83
8.5;5. Concluding Remarks;89
8.6;Acknowledgments;91
8.7;References;91
9;Chapter 4. Van der Waals Attraction In and Between Solids;94
9.1;1. Introduction;94
9.2;2. Applications;95
9.3;3. Schematic classification;97
9.4;4. Many-electron Schrödinger formalism;99
9.5;5. Electromagnetic modes;103
9.6;6. Dispersion energy;108
9.7;7. Concluding remarks;112
9.8;References;115
10;Chapter 5. Properties of Highly Excited Semiconductors (Experimental Aspects);120
10.1;1. Introduction;120
10.2;2. Experimental;122
10.3;3. Effects in direct-gap semiconductors;124
10.4;4. Effects in indirect-gap semiconductors;139
10.5;5. Futher comments;145
10.6;References;149
11;Chapter 6. Properties of Highly Excited Semiconductors (Theoretical Aspects);154
11.1;Introduction;154
11.2;1. Electron-hole plasma in germanium;155
11.3;2. Scattering and bound states in high-density exciton systems;163
11.4;3. Condensation in high-density exciton systems;172
11.5;Acknowledgements;176
11.6;References;176
12;Chapter 7. Binding Energy of Excitons Bound to Defects: Theoretical Aspects;180
12.1;1. Introduction;180
12.2;2. Bound exciton complexes with Coulomb interaction;181
12.3;3. Electron-phonon interaction;188
12.4;4. Influence of the defect;195
12.5;5. Excited states of bound excitons;197
12.6;6. Excitons bound to isoelectronic impurities;198
12.7;7. Final remarks;198
12.8;Acknowledgements;198
12.9;References;199
13;Chapter 8. Photoelectron Spectroscopy of Solids;202
13.1;1. Introduction;202
13.2;2. Principles of operation;203
13.3;3. General scope of results;205
13.4;4. Core level results;209
13.5;5. Valence band density of states;214
13.6;6. Conclusion;220
13.7;Acknowledgements:;220
13.8;References;220
14;Chapter 9. Surface Quantization in Semiconductors;224
14.1;Historical review;224
14.2;Surface quantization;226
14.3;Theoretical description of surface quantization;227
14.4;Approximate calculations;232
14.5;Electric quantum limit;232
14.6;Accumulation layer;234
14.7;Two-dimensional electron gas in a magnetic field;235
14.8;Quantum size effects in semiconducting thin films;236
14.9;Scattering of a two-dimensional electron gas;238
14.10;Experimental investigations of surface quantum phenomena;239
14.11;References;246
15;Chapter 10. On the Physics of Clean Silicon Surfaces;250
15.1;1. Introduction;251
15.2;2. Preparation of Clean Silicon Surfaces;252
15.3;3. Silicon (111) Surfaces;255
15.4;4. Silicon (100) Surfaces;273
15.5;Achnowledgements:;280
15.6;References;280
16;Chapter 11. Low-Energy Electron Diffraction for Surface Structure Analysis;284
16.1;1. Introduction;284
16.2;2. The LEED experiment;285
16.3;3. The kinematic theory;286
16.4;4. The multiple scattering theory of LEED;289
16.5;5. Results of the multiple scattering theory for LEED;297
16.6;6. Averaging methods for LEED data analysis;309
16.7;Acknowledgements;313
16.8;References;314
17;Chapter 12. Fundamentals of MOS Technology;318
17.1;1. Introduction;318
17.2;2. MOS capacitor;319
17.3;3. Technology;323
17.4;4. Barrier energies;326
17.5;5. Oxide charges;328
17.6;6. Interface states;331
17.7;7. Electronic conduction in the oxide;335
17.8;8. Ion implantation effects;338
17.9;9. Devices;339
17.10;References;343
18;Chapter 13. Charge Transfer Devices;346
18.1;1. Introduction;346
18.2;2. The three basic charge-transfer devices;348
18.3;3. Analysis of the charge-transfer process;352
18.4;4. Comparison of MOS BB, SCCD, and BCCD;361
18.5;5. Technological and material aspects;364
18.6;6. Conclusion;365
18.7;Acknowledgements;366
18.8;References;366
19;Chapter 14. Effects of Electrons on Phonon Spectra and Structural Phase Transitions;368
19.1;1. Introduction;368
19.2;2. Microscopic formulation of lattice dynamics;369
19.3;3. Adiabatic harmonic approximation (AHA);371
19.4;4. Electron screening in Wannier representation;374
19.5;5. Free-energy functional and structural phase transitions;376
19.6;References;381
20;Chapter 15. The Pressure Variable in Solid State Physics: What About 4f-Band Superconductors?;384
20.1;Introduction;384
20.2;1. The electronic instability of the cerium atom under pressure;385
20.3;2. Lanthanum is a 4f-band superconductor;392
20.4;3. A phenomenological attempt to understand the pressure-induced superconductivity of cesium and barium;397
20.5;4. Concluding remarks;402
20.6;Acknowledgements;403
20.7;References;404