Razeghi The MOCVD Challenge

A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition
2. Auflage 2010
ISBN: 978-1-4398-0700-2
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 799 Seiten

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP–InP, GaInAsP–GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world’s first InP/GaInAs superlattice that was fabricated by the author — this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors.

Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

Zielgruppe

Researchers and graduate students in physics, engineering, and materials.

Autoren/Hrsg.

Razeghi, Manijeh

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik

Inhaltsverzeichnis

Introduction to Semiconductor Compounds

III–V semiconductor alloys

III–V semiconductor devices

Technology of multilayer growth

Growth Technology

Metalorganic chemical vapor deposition

New non-equilibrium growth techniques

In situ Characterization during MOCVD

Reflectance anisotropy and ellipsometry

Optimization of the growth of III–V binaries by RDS

RDS investigation of III–V lattice-matched heterojunctions

RDS investigation of III–V lattice-mismatched structures

Insights on the growth process

Ex situ Characterization Techniques

Chemical bevel revelation

Deep-level transient spectroscopy

X-ray diffraction

Photoluminescence

Electromechanical capacitance-voltage and photovoltage spectroscopy

Resistivity and Hall measurement

Thickness measurement

MOCVD Growth of GaAs Layers

GaAs and related compounds band structure

MOCVD growth mechanism of GaAs and related compounds

Experimental details

Incorporation of impurities in GaAs grown by MOCVD

Growth and Characterization of the GaInP–GaAs System

Growth details

Structural order in GaxIn1-xP alloys grown by MOCVD

Defects in GaInP layers grown by MOCVD

Doping behavior of GaInP

GaAs–GaInP heterostructures

Growth and characterization of GaInP–GaAs multilayers by MOCVD
Optical and structural investigations of GaAs–GaInP quantum wells and superlattices grown by MOCVD

Characterization of GaAs–GaInP quantum wells by auger analysis of chemical bevels

Evaluation of the band offsets of GaAs–GaInP multilayers by electroreflectance
Intersubband hole absorption in GaAs–GaInP quantum wells

Optical Devices

Electro-optical modulators

GaAs-based infrared photodetectors grown by MOCVD

Solar cells and GaAs solar cells

GaAs-Based Lasers

Basic physical concepts

Laser structures

New GaAs-based materials for lasers

GaAs-Based Heterojunction Electron Devices Grown by MOCVD
Heterostructure field-effect transistors (HFETs)

Heterojunction bipolar transistors (HBTs)

Optoelectronic Integrated Circuits (OEICs)

Material considerations

OEICs on silicon substrates

The role of optoelectronic integration in computing

Examples of optoelectronic integration by MOCVD

InP–InP System: MOCVD Growth, Characterization, and Applications

Energy band structure of InP

Growth and characterization of InP using TEIn

Growth and characterization of InP using TMIn

Incorporation of dopants

Applications of InP epitaxial layers

GaInAs–InP System: MOCVD Growth, Characterization, and Applications

Growth conditions

Optical and crystallographic properties, and impurity incorporation in GaInAs grown by MOCVD

Shallow p+ layers in GaInAs grown by MOCVD by mercury implantation

GaInAs–InP heterojunctions: Multiquantum wells and superlattices grown by MOCVD

Magnetotransport in GaInAs–InP heterojunctions grown by MOCVD
Applications of GaInAs–InP system grown by MOCVD

GaInAsP–InP System: MOCVD Growth, Characterization, and Applications

Growth conditions

Characterization

Applications of GaInAsP–InP systems grown by MOCVD

Strained Heterostructures: MOCVD Growth, Characterization, and Applications

Growth procedure and characterization

Growth of GaInAs–InP multiquantum wells on GGG substrates

Applications

Monolayer epitaxy of (GaAs)n(InAs)n–InP by MOCVD

MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates

MOCVD growth of GaAs on silicon

InP grown on silicon

GaInAsP–InP grown on silicon

Applications

Optoelectronic Devices Based on Quantum Structures

GaAs and InP based quantum well infrared photodetectors (QWIP)

Self-assembled quantum dots, and quantum dot based photodetectors

Quantum dot lasers

InP based quantum cascade lasers (QCLs)

Über Autor(innen)

Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.