Roy / Pamplin Tunnelling and Negative Resistance Phenomena in Semiconductors

1. Auflage 2014
ISBN: 978-1-4832-7895-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 230 Seiten, Web PDF

Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.

Autoren/Hrsg.

Roy, D. K.

Pamplin, B. R.

Inhaltsverzeichnis

1;Front Cover;1
2;Tunnelling and Negative Resistance Phenomena in Semiconductors;4
3;Copyright Page;5
4;Table of Contents;6
5;EDITORS PREFACE;10
6;PREFACE;12
7;TABLE OF SYMBOLS USED;14
8;Chapter 1.
QUANTUM MECHANICAL
TUNNELLING;18
8.1;1.1 INTRODUCTION: THE NEED FOR A REVISION OF THE THEORY;18
8.2;1.2 TUNNELLING PROBABILITY;35
8.3;1.3 TIME FOR ELECTRON TUNNELLING;42
8.4;1.4 TUNNELLING CURRENT DENSITY;43
8.5;1.5 CONCLUSIONS;45
8.6;REFERENCES;48
9;Chapter 2. TUNNELLING IN ESAKI JUNCTIONS;53
9.1;2.1 INTRODUCTION;53
9.2;2.2 EFFECTS OF HEAVY DOPING;53
9.3;2.3 TUNNELLING PROBABILITY;65
9.4;2.4 TUNNELLING CURRENT;77
9.5;2.5 EXCESS CURRENT;90
9.6;2.6 THERMAL CURRENT IN TUNNEL DIODES;93
9.7;2.7 PREDICTION OF TUNNEL DIODE IV CHARACTERISTICS;96
9.8;2.8 DEPENDENCE OF TUNNEL CHARACTERISTICS ON DIFFERENT PHYSICAL PARAMETERS;98
9.9;REFERENCES;100
10;Chapter 3. CIRCUITRY AND TECHNOLOGY OF pn TUNNEL DEVICES;104
10.1;3.1 CIRCUIT APPLICATIONS OF TUNNEL DIODES;104
10.2;3.2 TECHNOLOGY OF TUNNEL DIODES;118
10.3;3.3 BACKWARD DIODES (62);127
10.4;3.4 ZENER DIODES (64-68);129
10.5;REFERENCES;136
11;Chapter 4. NEGATIVE CONDUCTANCE MICROWAVE DEVICES;139
11.1;4.1 INTRODUCTION;139
11.2;4.2 THE BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY (BNDC) EFFECTS;140
11.3;4.3 THE IMPACT AVALANCHE TRANSIT TIME (IMPATT) DEVICES;155
11.4;REFERENCES;161
12;Chapter 5. SWITCHING DEVICES;164
12.1;5.1 INTRODUCTION;164
12.2;5.2 UNIJUNCTION TRANSISTOR;164
12.3;5.3 FOUR LAYER pn pn DEVICES;173
12.4;5.4 AVALANCHE INJECTION DIODES;182
12.5;5.5 pnl (INSULATOR) M (METAL) DEVICES;184
12.6;5.6 SUMMARY;186
12.7;REFERENCES;187
13;APPENDIX: THE AIRY FUNCTION AND ITS PROPERTIES;190
14;BIBLIOGRAPHY;194
15;INDEX;228