Saraniti / Ravaioli Nonequilibrium Carrier Dynamics in Semiconductors

Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA
2006
ISBN: 978-3-540-36588-4
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 110, 372 Seiten

Reihe: Springer Proceedings in Physics

'Nonequilibrium Carrier Dynamics in Semiconductors' is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

Autoren/Hrsg.

Saraniti, M.

Ravaioli, U.

Saraniti, Marco

Ravaioli, Umberto

Inhaltsverzeichnis

1;Preface;6
2;Contents;7
3;Electron transport in curved low dimensional electron systems;14
4;Fabrication and Characterization of InAs Mesoscopic Devices;19
5;Nonlinear Effects on Quantum Interference in Electron Billiards;23
6;Prediction of Entanglement Detection by I- V Characteristics;27
7;Simulation of Entanglement Creation for Carrier- Impurity Scattering in a 2D System;31
8;Super- Poissonian Current Fluctuations in Tunneling Through Coupled Quantum Dots;35
9;Ultrafast Formation of Coupled Phonon- Plasmon Modes in InP Observed with Femtosecond Terahertz Spectroscopy;40
10;Optical Coherent Control of Polariton Modes in ZnSe Single- Quantum Wells;44
11;Optical Properties of Coupled Quantum Disk- Waveguide Structure;48
12;Picosecond Spin- Preserving Carrier Capture in InGaAs/ GaAs Quantum Dots;52
13;Influence of Surfaces on the Pure Dephasing of Quantum Dots;56
14;Exploiting the Non- Marlcovian Nature of Carrier- Phonon Dynamics: Multi- Pulse Control of Decoherence in Quantum Dots;60
15;Numerical Study of Weak Localization Effects in Disordered Cavities;65
16;Carrier Scattering by Optical Phonons, Two- Phonon Processes in Photon Absorption, and Spontaneous Polarization in Wurtzites;69
17;Terahertz Plasma Oscillations in Nanotransistors;73
18;High- Intensity THz Radiation From a Large Interdigitated Array Photoconductive Emitter;82
19;Broadband Terahertz Emission From Ion- Implanted Semiconductors;86
20;THz Collective Real- Space Oscillations of Ballistic Electrons in Wide Parabolic Potential Wells: an Exotic Transport Regime;90
21;Effect of Injector Doping on Non- Equilibrium Electron Dynamics in Mid- Infrared GaAs/ AlGaAs Quantum Cascade Lasers;94
22;Experimental Investigation of Hot Carriers in THz and Mid- IR Quantum Cascade Lasers;98
23;Time- and Spectrally Resolved THz Photoconductivity in Quantum Hall Devices;103
24;Transport Properties and Terahertz Emission in Narrow Minigap GaAs- GaAlAs Superlattices;107
25;Investigation of Antenna- Coupled MOM Diodes for Infrared Sensor Applications;112
26;Transport and Noise in Ultrafast Unipolar Nanodiodes and Nanotransistors;116
27;Monte Carlo Study of Coupled SO Phonon- Plasmon Scattering in Si MOSFETs with High K- Dielectric Gate Stacks: Hot Electron and Disorder Effects;121
28;Implementation of Separable Scattering Mechanisms in Three- Dimensional Quantum Mechanical Simulations of Devices;126
29;A 2D- NEGF Quantum Transport Study of Unintentional Charges in a Double Gate Nanotransistor;130
30;Wigner Function RTD Simulations with DMS Barriers;134
31;High Field Transport in GaN and AlGaN/ GaN Heterojunction Field Effect Transistors;138
32;Impact Ionization and High- Field Electron Transport inGaN;144
33;Studies of High Field Transport in a High- Quality InN Film by Ultrafast Raman Spectroscopy;148
34;Monte Carlo Investigation of Dynamic Transport in Nitrides;152
35;High- Field Transport in Nitride Channels: a Hot- Phonon Bottleneck;156
36;Quantum Transport and Spin Polarization in Strongly Biased Semiconductor Superlattices with Rashba Spin- Orbit Coupling;160
37;Temperature Dependent Transport in Spin Valve Transistor Structures;164
38;Spin Filtering Effects in a Quantum Point Contact;168
39;Exchange Effects in the Wigner- Function Approach;172
40;Few- Particle Quantum Transmitting Boundary Method: Scattering Resonances Through a Charged ID Quantum Dot;176
41;The R- E Approach to Tunnelling in Nanoscale Devices;180
42;Monte Carlo Simulation of Solid- State Thermionic Energy Conversion Devices Based on Non- Planar Heterostructure Interfaces;184
43;Simulations of Inelastic Tunnelling in Molecular Bridges;188
44;Phonon Effects in Nanotubes: Phase Space Reduction and Electron Conductance;192
45;Carbon Nanotubes Films for Sensing Applications: From Piezoresistive Sensor to Gas Sensing;196
46;Electro- Thermal Transport in Silicon and Carbon Nanotube Devices;200
47;Silicon- Based Ion Channel Platforms;205
48;Implicit Water Simulations of Non- Equilibrium Charge Transport in Ion Channels;209
49;An Investigation of the Dependence of Ionic Conduction on the Dielectric Properties of Porin;214
50;Physical Mechanisms for Ion- Current Levelling Off in the KcsA Channel Through Combined Monte Carlo/ Molecular Dynamics Simulations;219
51;Simulations of the Gramicidin A Channel by Using the TR- PNP Model;223
52;Phonon Emission and Absorption by Holes in the HOMO Bands of Duplex DNA;227
53;An Impedance Network Model for the Electrical Properties of a Single- Protein Nanodevice;231
54;Field Effect Transistor Constructed of Novel Structure With Short- Period ( GaAs)n/( AlAs) m Superlattice;235
55;Predominance of Geminate Process of Exciton Formation in AlGaAs Layers at Low Excitation;239
56;Giant Increase of Electron Saturated Drift Velocity in a MODFET Channel;247
57;Technological Crossroads: Silicon or III- V for Future Generation Nanotransistors;251
58;Optical Phonon Modes and Electron- Phonon Interaction in a Spheroidal Quantum Dot;255
59;Terahertz Negative Differential Conductivity in Heterostructures due to Population Inversion and Bunching of Ballistic Electrons;259
60;Carrier Dynamics of Single ZnO Nanowires;263
61;Traditional Hot- Electron MOS Devices for Novel Optoelectronic Applications;267
62;Investigation of Self- Heating Effects in Individual SOI Devices and Device- Device Interactions;271
63;Measurements of the Electrical Excitation of QH-Devices in the Real Time Domain;275
64;Impact Ionization and Avalanche Multiplication in AlGaAs: a Time- Resolved Study;279
65;Fermi- Dirac Statistics in Monte Carlo Simulations of InGaAs MOSFETs;283
66;Monte Carlo Study of the Suppression of Diffusion Noise;288
67;TeraHertz Emission From Nanometric HEMTs Analyzed by Noise Spectra;292
68;Electron Transport in Novel Sb- based Quantum Cascade Lasers;296
69;Quantum Phonon- Limited High- Field Electron Transport in Semiconductors;301
70;Transit Time and Velocity Distribution Functions in Decananometer Gate- Lengtli SOI MOSFETs;305
71;Collision of Fano Resonances in a Molecular Ring;309
72;Simulation of Domain Formation in p- Si/ SiGe Quantum Cascade Structures;313
73;Calculation of Optical Gain and Electron Relaxation Rates in Single- and Double- Phonon Resonant Quantum Cascade Lasers in a Magnetic Field;317
74;Curvature- Dependent Conductance Resonances in Quantum Cavities;321
75;Mid- Infrared Optical Absorption in Germanium Under Intense Laser Fields;325
76;Interface Related Radiative Recombination on a Type- II Broken- Gap Single GalnAsSb/ InAs Heteroj unction;329
77;Drift and Diffusion in Superlattices Within the Wannier- Stark Approach;333
78;Ballistic Transport in Arbitrary Oriented Nanowire MOSFETs;337
79;Scanning Tunneling Microscopy of Ultrathin Silicon-on- Insulator;341
80;Effect of Regular and Irregular Potential Perturbations in Mesoscopic Cavities;345
81;Simulation of Electronic/ Ionic Mixed Conduction in Solid Ionic Memories;349
82;Full- Band Modeling of Magnetic Semiconductors;353
83;Non- Parabolic Model for the Solution of 2- D Quantum Transverse States Applied to Narrow Conduction Channel Simulation;363
84;Self- Consistent Quantum Transport Theory of Carrier Capture in Heterostructures;367