E-Book, Englisch, Band 3, 248 Seiten, eBook
Scott Ferroelectric Memories
2000
ISBN: 978-3-662-04307-3
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, Band 3, 248 Seiten, eBook
Reihe: Springer Series in Advanced Microelectronics
ISBN: 978-3-662-04307-3
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
1. Introduction.- 2. Basic Properties of RAMs (Random Access Memories).- 3. Electrical Breakdown (DRAMs and NV-RAMs).- 4. Leakage Currents.- 5. Capacitance—Voltage Data: C(V).- 6. Switching Kinetics.- 7. Charge Injection and Fatigue.- 8. Frequency Dependence.- 9. Phase Sequences in Processing.- 10. SBT-Family Aurivillius-Phase Layer Structures.- 11. Deposition and Processing.- 12. Nondestructive Read-Out Devices.- 13. Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10–100 GHz Devices.- 14. Wafer Bonding.- 15. Electron-Emission and Flat-Panel Displays.- 16. Optical Devices.- 17. Nanophase Devices.- 18. Drawbacks and Disadvantages.- A. Exercises.
