E-Book, Englisch, 224 Seiten, Web PDF
Sharma / Purohit / Pamplin Semiconductor Heterojunctions
1. Auflage 2015
ISBN: 978-1-4832-8086-8
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, 224 Seiten, Web PDF
ISBN: 978-1-4832-8086-8
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers. Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then introduced to the energy band profiles of isotype and anisotype heterojunctions, the practical aspects of their fabrication and characterization, and their electronic and optoelectronic properties. Some methods used in the preparation of heterojunctions are also described, including the chemical method, solution growth method, alloying method, and sputtering method. The remaining chapters focus on the characterization of the grown layers, examples of heterojunction devices, and experimental work on heterojunctions. This monograph is intended for research workers and graduate students.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;Semiconductor Heterojunctions;4
3;Copyright Page;5
4;Table of Contents ;6
5;Preface;9
6;Chapter 1. Theory of Heterojunctions;10
6.1;1.1. Abrupt anisotype heterojunctions;10
6.2;1.2. Abrupt isotype heterojunctions;23
6.3;1.3. Graded heterojunctions;29
6.4;References;32
7;Chapter 2. Energy Band Profiles of Heterojunctions;33
7.1;2.1. Profiles of anisotype heterojunctions;35
7.2;2.2. Profiles of isotype heterojunctions;37
7.3;References;45
8;Chapter 3. Methods of Preparation of Heterojunctions;47
8.1;3.1. Chemical method;47
8.2;3.2. Chemical vapour-transport method;49
8.3;3.3. Solution growth method;54
8.4;3.4. Alloying method;57
8.5;3.5. Vacuum evaporation method;58
8.6;3.6. Sputtering method;62
8.7;References;62
9;Chapter 4. Characterization of the Grown Layers;67
9.1;4.1. Theoretical considerations;67
9.2;4.2. Structure and defects;72
9.3;4.3. Composition of the grown layer;76
9.4;4.4. Layer thickness;76
9.5;4.5. Electrical characterization;79
9.6;References;85
10;Chapter 5. Electrical Properties of Heterojunctions;88
10.1;5.1. Capacitance–voltage characteristics;88
10.2;5.2. Current–voltage characteristics;96
10.3;References;112
11;Chapter 6. Optoelectronic Properties of Heterojunctions;115
11.1;6.1. Photoelectric properties of anisotype heterojunctions;115
11.2;6.2. Photoelectric properties of isotype heterojunctions;128
11.3;6.3. Luminescence and radiative transitions;138
11.4;References;139
12;Chapter 7. Heterojunction Devices;142
12.1;7.1. Photovoltaic converters;142
12.2;7.2. Photodiodes;144
12.3;7.3. Infrared converters;146
12.4;7.4. Electroluminescent diodes;148
12.5;7.5. Injection lasers;151
12.6;7.6. Transistors;155
12.7;7.7. Miscellaneous devices;158
12.8;References;161
13;Chapter 8. Survey of Experimental Work on Heterojunctions;166
13.1;References;201
14;Author Index;212
15;Subject Index;221
