Shen / Chueh Nanowire Electronics

1. Auflage 2018
ISBN: 978-981-13-2367-6
Verlag: Springer Nature Singapore
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 396 Seiten

Reihe: Nanostructure Science and Technology

This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

Dr. Guozhen Shen received his Ph.D. degree in Chemistry from University of Science and Technology of China in 2003. He then worked at Hanyang University, Korea(2004),National Institute for Materials Science, Japan(2005-2007) and University of Southern California (2009-2013). He was a professor at the Huazhong University of Science andTechnology (HUST)and the director of Energy Photonics Division and the assistant director of Wuhan National Laboratory for Optoelectronics (WNLO).In 2013, he joined Institute of Semiconductors, Chinese Academy of Sciences as a professor. He is the author or co-author of more than 200 research articles in peer reviewed journals and 9 book chapters, he also the editor of a book. His most recent research interests include the synthesis and characterization of one-dimensional nanostructures and their device applicationsin electronics and optoelectronics. Dr. Guozhen Shen is the assistant editor of Nanoscale Research Letters, the Asian Associate Editor of Journal of Nanoengineering and Nanomanufacturing, the Associate Editor of Reviews in Advanced Science and Engineering, and servers as the Editorial Board Member for more than 10 international journals.He was honored with the Distinguished Professor of the Hundred Talents Recruitment Program of Global Experts of Hubei in 2010, and the New Century Excellent Talents of Ministry of Education in 2011. Dr. Yu-Lun Chueh received his Ph.D.from the Department of Materials Science and Engineering, National Tsing Hua University, Taiwan in 2006 and worked as a postdoctoral fellow in the Department of Electrical Engineering and Computer Sciences, with a joint appointment with Lawrence Berkeley National Laboratory from 2007 to 2009. He joined the 

Autoren/Hrsg.

Shen, Guozhen

Chueh, Yu-Lun

Inhaltsverzeichnis

1;Preface;6
2;Contents;7
3;Chapter 1: X-Ray Spectroscopic Analysis of Electronic Properties of One-Dimensional Nanostructured Materials;9
3.1;1.1 Introduction;9
3.2;1.2 Synchrotron X-Ray Spectroscopies;14
3.3;1.3 Nanostructured Titania Arrays;16
3.3.1;1.3.1 Freestanding TiO2 Nanotube Array;16
3.3.2;1.3.2 QD Co-sensitized TiO2 Nanorod Arrays;22
3.4;1.4 Nanoflaky MnO2/Functionalized Carbon Nanotubes (CNT);25
3.5;1.5 Conclusion and Future Perspective;34
3.6;References;34
4;Chapter 2: A Correlated Study of Nanotube/Nanowire Transistor Between TEM Inspection and Electrical Characterization;38
4.1;2.1 Introduction;38
4.2;2.2 Experimental Method;39
4.2.1;2.2.1 Multi-probe Stations;39
4.2.2;2.2.2 In Situ Nano-manipulation;41
4.3;2.3 Fabrication of Through-Hole Chip and Membrane Chip;42
4.4;2.4 Demonstration of the Correlated Study;45
4.4.1;2.4.1 Effects of Oxygen Bonding on Defective Semiconducting and Metallic Single-Walled Carbon Nanotube Bundles;45
4.4.2;2.4.2 Stacking Fault Induced Tunnel Barrier in Platelet Graphite Nanofiber;47
4.4.3;2.4.3 Self-Aligned Graphene Oxide Nanoribbon Stack with Gradient Bandgap for Visible-Light Photodetection;51
4.5;2.5 Conclusion;56
4.6;References;57
5;Chapter 3: Properties Engineering of III-V Nanowires for Electronic Application;59
5.1;3.1 Introduction;59
5.1.1;3.1.1 Synthesis of Nanowires;60
5.1.1.1;3.1.1.1 Bottom-Up Approach;60
5.1.1.2;3.1.1.2 Top-Down Approach;60
5.1.2;3.1.2 Applications of Nanowire Field-Effect Transistor;61
5.1.2.1;3.1.2.1 Integrated Circuit;61
5.1.2.2;3.1.2.2 Photodetector;61
5.1.2.3;3.1.2.3 Biosensor;61
5.1.3;3.1.3 NWFET Structure;62
5.1.3.1;3.1.3.1 Vertical Nanowire FET;62
5.1.3.2;3.1.3.2 Horizontal Nanowire FET;62
5.1.4;3.1.4 Advantages of III-V Compound Semiconductor NWs;63
5.1.5;3.1.5 Requirement on Properties Engineering;63
5.2;3.2 Surface Modification;64
5.2.1;3.2.1 Molecular Passivation;65
5.2.2;3.2.2 Metal Cluster Decoration;67
5.2.3;3.2.3 Surface Coating;69
5.2.3.1;3.2.3.1 By Thin Dielectric Layer;69
5.2.3.2;3.2.3.2 Core-Shell Nanowire;70
5.3;3.3 Contact Engineering;71
5.3.1;3.3.1 Contact Treatment;73
5.3.2;3.3.2 Nickelide Formation;74
5.3.3;3.3.3 Catalytic Tip Contact;75
5.4;3.4 Crystal Engineering;76
5.4.1;3.4.1 Catalyst Diameter Control;77
5.4.2;3.4.2 Growth Temperature;78
5.4.3;3.4.3 Source Flow Control;80
5.4.4;3.4.4 Challenges;80
5.5;3.5 Conclusions;81
5.6;References;82
6;Chapter 4: Probing Material Interfaces in Nanowire Devices Using Capacitive Measurements;89
6.1;4.1 Introduction;89
6.2;4.2 Diffused Junction of a Semiconductor Nanowire;90
6.2.1;4.2.1 Design of Test Structure and Measurement Scheme;91
6.2.2;4.2.2 Device Fabrication;91
6.2.3;4.2.3 Capacitance Measurement and Determination of Dopant Density;93
6.2.4;4.2.4 Dopant Profile;94
6.2.5;4.2.5 Summary;96
6.3;4.3 Surface States of Semiconductor Nanowires Characterized by Capacitance-Voltage Measurements;96
6.3.1;4.3.1 The Interface State Density of a Si Nanowire with Al2O3 Oxide;97
6.3.2;4.3.2 The Native Oxide in InAs nanowires;98
6.3.3;4.3.3 Capacitance for Mobility Determination;101
6.3.4;4.3.4 Summary and Future Work;102
6.4;4.4 Capacitance Measurement of Metal-Semiconductor Carbon Nanotube Contacts;104
6.4.1;4.4.1 Test Structure for C-V Measurement and Its Fabrication;104
6.4.2;4.4.2 Simulation of the C-V Measurements;105
6.4.3;4.4.3 Measurement Results;110
6.4.4;4.4.4 The Geometry of Metal-CNT Contacts;111
6.5;4.5 Summary and Future Work;114
6.6;References;114
7;Chapter 5: Metal-Semiconductor Compound Contacts to Nanowire Transistors;117
7.1;5.1 Introduction;117
7.2;5.2 Phases of Metal-Semiconductor Compound Contacts;118
7.2.1;5.2.1 Metal Silicide in Si NWs;118
7.2.2;5.2.2 Metal-Germanide in Ge NWs;123
7.2.3;5.2.3 Metal and III-V Compound Contacts;127
7.3;5.3 Kinetics of the Solid-State Reaction Between Metal and Semiconductor NWs;131
7.3.1;5.3.1 Kinetics Modeling: A Case Study of Ni-InGaAs Reaction;133
7.3.2;5.3.2 Atomic-Scale Dynamics;139
7.3.3;5.3.3 Modified Kinetic Process;140
7.4;5.4 Electrical Properties;145
7.4.1;5.4.1 Electrical Applications of Compound Contacts;145
7.4.2;5.4.2 Band Alignment and Charge Injection;150
7.4.3;5.4.3 Ultrashort Channel Devices;154
7.5;5.5 Conclusions;158
7.6;References;159
8;Chapter 6: Nanowire-Based Transparent Conductive Electrodes;165
8.1;6.1 Introduction;165
8.2;6.2 Synthesis, Fabrication, and Physical Properties of Transparent Conductive Oxides;166
8.2.1;6.2.1 N-Type Transparent Conductive Electrodes;168
8.2.1.1;6.2.1.1 Indium Tin Oxide Nanowires;168
8.2.1.2;6.2.1.2 Doped Zinc Oxide Nanowires;171
8.2.2;6.2.2 P-Type TCO Nanowires;177
8.3;6.3 Synthesis, Fabrication, and Physical Properties of Carbon Nanotube Networks;178
8.3.1;6.3.1 Transparent Conducting Carbon Nanotube Network Films;178
8.3.2;6.3.2 Nanomaterial Hybridized Transparent Conducting Nanotube Network Films;180
8.4;6.4 Synthesis, Fabrication, and Physical Properties of Metallic Nanowire Networks (MNW);181
8.4.1;6.4.1 Silver Nanowires;181
8.4.2;6.4.2 Copper Nanowires;187
8.5;6.5 Applications;189
8.5.1;6.5.1 Photovoltaics;189
8.5.2;6.5.2 Light-Emitting Devices;192
8.5.3;6.5.3 Smart Windows and Displays;194
8.5.4;6.5.4 Transparent Film Heaters;195
8.5.5;6.5.5 Other Applications;197
8.6;6.6 Summary;197
8.7;References;201
9;Chapter 7: One-Dimensional Nanowire-Based Heterostructures for Gas Sensors;207
9.1;7.1 Introduction;207
9.2;7.2 Advantages of Nanowires for Application in Gas Sensing;209
9.3;7.3 Nanowire-Nanoparticle Heterostructures and Gas Sensing Mechanism;211
9.3.1;7.3.1 Metal Oxide-Metal Heteronanowires;214
9.3.2;7.3.2 Metal Oxide-Metal Oxide Heteronanowires;220
9.3.2.1;7.3.2.1 P-N Heteronanowires;220
9.3.2.2;7.3.2.2 N-N Heteronanowire;222
9.4;7.4 Gas Sensing Performances of Heteronanowires;224
9.4.1;7.4.1 Enhanced Sensing Performance of Metal/Metal Oxide Heteronanowires;225
9.4.2;7.4.2 Enhanced Sensing Performance of P-N Heteronanowires;230
9.4.3;7.4.3 Enhanced Sensing Performance of N-N Heteronanowires;232
9.5;7.5 Summary;234
9.6;References;235
10;Chapter 8: Silicon Carbide Nanowires and Electronics;242
10.1;8.1 Introduction;242
10.2;8.2 Synthesis and Design of SiC Nanowires;243
10.2.1;8.2.1 SiC Nanowires Growth in Vapor;244
10.2.1.1;8.2.1.1 VLS Growth;246
10.2.1.2;8.2.1.2 VS Growth;248
10.2.2;8.2.2 SiC Nanowires Growth in Liquid;249
10.2.2.1;8.2.2.1 Solvothermal Method;249
10.2.2.2;8.2.2.2 Electrochemical Etching;251
10.2.3;8.2.3 Doping of SiC Nanowires;251
10.2.3.1;8.2.3.1 p-Type Doping;252
10.2.3.2;8.2.3.2 n-Type Doping;252
10.2.4;8.2.4 SiC Nanowires with Complex Morphologies;254
10.2.4.1;8.2.4.1 Hierarchical SiC Nanowires;254
10.2.4.2;8.2.4.2 Beaded SiC Nanochains;257
10.2.4.3;8.2.4.3 Bamboo-Like SiC Nanowires;259
10.2.4.4;8.2.4.4 Twinned SiC Nanowires;259
10.2.4.5;8.2.4.5 Bicrystalline SiC Nanowires;261
10.2.5;8.2.5 Coaxial Core-Shell SiC Nanowires;264
10.2.5.1;8.2.5.1 SiC-Core-Based Core-Shell Nanowires;264
10.2.5.2;8.2.5.2 SiC-Shell-Based Core-Shell Nanowires;269
10.2.6;8.2.6 Aligned SiC Nanowire Arrays;271
10.2.6.1;8.2.6.1 Homoepitaxial Growth;272
10.2.6.2;8.2.6.2 Electrochemical Etching;273
10.2.6.3;8.2.6.3 Converted from Si Nanowire Arrays by the In Situ Carbonizing Route;276
10.2.6.4;8.2.6.4 Template-Assisted Synthesis;277
10.3;8.3 Electronic Applications of SiC Nanowires;277
10.3.1;8.3.1 Field Emission Applications;278
10.3.1.1;8.3.1.1 Field Emission Phenomena;278
10.3.1.2;8.3.1.2 Enhanced FE Properties by Growing SiC Nanowires with Sharp Tips;281
10.3.1.3;8.3.1.3 Enhanced FE Properties by Doped SiC Nanowires;283
10.3.1.4;8.3.1.4 Enhanced FE Properties by Surface-Decorated SiC Nanowire Emitters with Nanoparticles;287
10.3.1.5;8.3.1.5 Enhanced FE Properties by Orientation-Ordered SiC Nanowire Arrays;291
10.3.1.6;8.3.1.6 Enhanced FE Properties of SiC Nanowires with Other Morphologies;295
10.3.1.7;8.3.1.7 FE Properties of Flexible SiC Nanowire Cathodes;297
10.3.2;8.3.2 Supercapacitors;303
10.3.2.1;8.3.2.1 Supercapacitors with SiC Nanowire Electrodes;304
10.3.2.2;8.3.2.2 Supercapacitors with SiC Nanowire Composite Electrodes;305
10.3.3;8.3.3 Photocatalysts;309
10.3.3.1;8.3.3.1 Photocatalytic Degradation of Pollutants;309
10.3.3.2;8.3.3.2 Photocatalytic Hydrogen Production;310
10.3.3.3;8.3.3.3 Photocatalytic CO2 Conversion;312
10.3.4;8.3.4 Field-Effect Transistors;312
10.3.4.1;8.3.4.1 Electrical Properties of SiC Nanowire-Based FETs;313
10.3.4.2;8.3.4.2 Improvement of Source/Drain Ohmic Contact by Ni-Based Contacts;314
10.3.5;8.3.5 Pressure Sensors;317
10.3.5.1;8.3.5.1 Piezoresistive Effect in Semiconductors;318
10.3.5.2;8.3.5.2 The Piezoresistive Effect in SiC Nanowires;319
10.4;8.4 Conclusions and Outlooks;323
10.5;References;324
11;Chapter 9: Nanowire Bioelectronics;341
11.1;9.1 Nanowire Bioelectronics for the Detection of Biological Molecules;343
11.2;9.2 Nanowire Bioelectronics for Extracellular Recording;347
11.3;9.3 Nanowire Bioelectronics for Intracellular Recording;349
11.4;9.4 Nanowires for 3D Interfacing with Biological Systems;352
11.5;9.5 Conclusion and Prospects;353
11.6;References;354
12;Chapter 10: Nanowires for Triboelectric Nanogenerators;357
12.1;10.1 Introduction of Triboelectric Nanogenerators;357
12.2;10.2 Nanowire-Based Flexible TENGs;360
12.3;10.3 Nanowire-Based Self-Powered Electronic Skins;365
12.4;10.4 Summary;365
12.5;References;367
13;Chapter 11: Nanowire-Based Lasers;370
13.1;11.1 Introduction;370
13.2;11.2 Nanowire Lasing Mechanisms;371
13.2.1;11.2.1 Waveguiding Mechanism;372
13.2.2;11.2.2 Gain and Losses;375
13.3;11.3 Materials for Nanowire Lasers;381
13.4;11.4 Wavelength Tunability in Nanowire Lasers;382
13.5;11.5 New Nanowire Laser Cavity Structures;386
13.6;11.6 Surface Plasmon Polariton Lasers;388
13.7;11.7 Electrical Excitation of Nanowire Lasers;390
13.8;References;392