E-Book, Englisch, 103 Seiten, eBook
Tan / He Electromigration Modeling at Circuit Layout Level
2013
ISBN: 978-981-4451-21-5
Verlag: Springer Singapore
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, 103 Seiten, eBook
Reihe: SpringerBriefs in Reliability
ISBN: 978-981-4451-21-5
Verlag: Springer Singapore
Format: PDF
Kopierschutz: 1 - PDF Watermark
Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
CHAPTER 1 Introduction1.1 Overview of Electromigration1.2 Modeling of Electromigration1.3 Organization of the Book1.4 SummaryCHAPTER 2 3D Circuit Model Construction and Simulation 2.1 Introduction2.2 Layout Extraction and 3D Model Construction2.3 Transient Electro-thermo-structural Simulations and Atomic Flux Divergence (AFD) Computation2.4 Simulation Results and Discussions2.5 Effects of Barrier Thickness and Low-? Dielectric on Circuit EM Reliability2.6 SummaryCHAPTER 3 Comparison of EM Performances in Circuit and Test Structures 3.1 Introduction3.2 Model Construction and Simulation Setup3.3 Distributions of Atomic Flux Divergences under Different Operation Conditions3.4 Effects of Interconnect Structures on Circuit EM Reliability3.5 Effects of Transistor Finger Number on Circuit EM Reliability3.6 SummaryCHAPTER 4 Interconnect EM Reliability Modeling at Circuit Layout Level 4.1 Introduction4.2 Model Construction and Simulation Setup4.3 Distributions of Atomic Flux Divergences4.4 Effects of Layout and Process parameters on Circuit EM Reliability. 4.5 SummaryCHAPTER 5 Concluding Remarks 5.1 Conclusions5.2 Recommenations for Future Work
