Buch, Englisch, 310 Seiten, Format (B × H): 145 mm x 222 mm, Gewicht: 526 g
From Mega-Bit to Giga-Bit
Buch, Englisch, 310 Seiten, Format (B × H): 145 mm x 222 mm, Gewicht: 526 g
ISBN: 978-1-138-41395-5
Verlag: CRC Press
This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM) process technologies—the longstanding technology driver of Si ULSI—as they advance from the 1 Kbit to the Gbit DRAM era.
Zielgruppe
Professional
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface to the Series -- Preface -- Contributors -- 1. MOS Device Technology/Hiroyuki Tango -- 1.1. Introduction -- 1.2. MOS device technology -- 1.3. Scaling law for lower sub-micron MOS devices -- 1.4. Toward Gbit and beyond -- 1.5. Si quantum devices -- 2. Memory Cell Technology/Hiroyuki Tango -- 2.1. Memory cell technology trend -- 2.2. Trench capacitor cells -- 2.3. Stacked capacitor cell -- 2.4. High e and ferroelectric films for the gigabit generation -- 3. Lithography/Masataka Miyamura -- 3.1. Introduction -- 3.2. Photolithography -- 3.3. Resist and resist process -- 3.4. EB lithography -- 3.5. X-ray lithography -- 4. Dry Etching/Makoto Sekine -- 4.1. Introduction -- 4.2. Basic etching hardware and process technologies -- 4.3. Emerging etching process technologies -- 5. Thin Film Insulator/Kikuo Yamabe -- 5.7. Introduction -- 5.2. Oxide breakdown defect -- 5.3. Trench corner oxidation -- 5.4. Fatigue breakdown -- 5.5. Polysilicon oxide -- 5.6. Trapping center -- 5.7. Stress induced leakage current -- 5.8. Summary -- 6. Impurity Doping/Kikuo Yamabe -- 6.1. Introduction -- 6.2. Impurity doping -- 6.3. Macroscopic diffusion mechanism -- 6.4. Microscopic diffusion mechanism -- 6.5. Point defect control technology -- 6.6. Summary -- 7. Metallization/Kyoichi Suguro -- 7.1. Gate electrodes -- 7.2. Source and drain contacts -- 7.3. Interconnects -- 7.4. Summary -- 8. Chemical Vapor Deposition (CVD)/Nobuo Hayasaka 196 -- 8.1. Introduction -- 8.2. CVD of poly crystalline silicon -- 8.3. CVD of metals -- 8.4. CVD of insulators -- 9. Crystal Technology/Yoshiaki Matsusita -- 9.1. Introduction -- 9.2. Silicon crystal growth technology -- 9.3. Crystalline defect control -- 9.4. Epitaxial wafer -- 9.5. SOI technology -- 9.6. Hereafter subject of crystal technology -- 10. Process and Device Simulation/Tetsunori Wada -- 10.1. Introduction -- 10.2. Process simulation -- 10.3. Device simulation -- 10.4. Conclusion -- 11. SOI Technology/Makoto Yoshimi -- 11.1. History of SOI technology -- 11.2. Thin-film SOI structure -- 11.3. SOI substrate technology -- 11.4. Application to ULSI circuits -- 11.5. Summary -- Index.
