Tsu Superlattice to Nanoelectronics

2. Auflage 2010
ISBN: 978-0-08-096814-8
Verlag: Elsevier Science & Techn.
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 346 Seiten

Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials

Dr. R. Tsu started his professional career at the Bell Telephone Laboratories, Murray Hill, NJ, 1961, working on the theory and experiments related to electron-phonon interaction in piezoelectric solids. He became a close collaborator of Leo Esaki (Nobel Laureate in 1973) at IBM T.J. Watson Research Center where he joined in 1966, working on theory and experiments of optical- and transport-properties, band structures, in solids, and material characterization. A man-made semiconductor superlattice and modulation doping were conceived jointly with Esaki, in 1969, which led to a rapid development of man-made quantum materials and quantum structures eventually evolved into the present day quantum dots. His original formulation of tunneling through multiple man-made heterojunctions is widely accepted in nearly all aspects of resonant tunneling devices reaching Tera-Hertz, thus far being the fastest device to date. The theory and experiments of man-made superlattices and resonant tunneling through a quantum well led to his outstanding contribution award from IBM Research in 1975 and later in 1985, to sharing the International New Materials Prize of the American Physical Society with Esaki and Chang. In 1979, he became the head of Materials Research at Energy Conversion Devices, Inc., in charge of the study on the formation and structure of amorphous silicon. His major contributions involve the determination of bond angle distribution from Raman scattering and optical absorption measurements and experimental determination of conductivity percolation. In 1985, he became the head of the amorphous silicon research group at the Solar Energy Research Institute (now NREL) as a principal scientist, working on amorphous Si/Ge and Si/C alloys, showing that the famous Tauc's plot may be theoretically derived without adjustable parameters. In 1975, as the recipient of the Alexander von Humboldt award, he took a year sabbatical at Max Planck Institute for Solid State Physics in

Autoren/Hrsg.

Tsu, Raphael

Inhaltsverzeichnis

1;Front Cover;1
2;Superlattice to Nanoelectronics;4
3;Copyright Page;5
4;Table of Contents;6
5;Preface;10
6;Introduction;14
7;Chapter 1 Superlattice;20
7.1;1.1 The Birth of the Man-Made Superlattice;20
7.2;1.2 A Model for the Creation of Man-Made Energy Bands;23
7.3;1.3 Transport Properties of a Superlattice;25
7.4;1.4 More Rigorous Derivation of the NDC;25
7.5;1.5 Response of a Time-Dependent Electric Field and Bloch Oscillation;29
7.6;1.6 NDC from the Hopping Model and Electric Field–Induced Localization;35
7.7;1.7 Experiments;46
7.8;1.8 Type-III Superlattice (Historically Type-II Superlattice);52
7.9;1.9 Physical Realization and Characterization of a Superlattice;63
7.10;1.10 Summary;71
8;Chapter 2 Resonant Tunneling via Man-Made Quantum Well States;76
8.1;2.1 The Birth of Resonant Tunneling;76
8.2;2.2 Some Fundamentals;80
8.3;2.3 Conductance from the Tsu–Esaki Formula;85
8.4;2.4 Tunneling Time from the Time-Dependent Schrödinger Equation;86
8.5;2.5 Damping in Resonant Tunneling;95
8.6;2.6 Very Short l and w for an Amorphous QW;116
8.7;2.7 Self-Consistent Potential Correction of DBRT;118
8.8;2.8 Experimental Confirmation of Resonant Tunneling;122
8.9;2.9 Instability in RTD;123
8.10;2.10 Summary;130
9;Chapter 3 Optical Properties and Raman Scattering in Man-Made Quantum Systems;134
9.1;3.1 Optical Absorption in a Superlattice;134
9.2;3.2 Photoconductivity in a Superlattice;140
9.3;3.3 Raman Scattering in a Superlattice and QW;143
9.4;3.4 Summary;159
10;Chapter 4 Dielectric Function and Doping of a Superlattice;162
10.1;4.1 Dielectric Function of a Superlattice and a Quantum Well;162
10.2;4.2 Doping a Superlattice;166
10.3;4.3 Summary;170
11;Chapter 5 Quantum Step and Activation Energy;172
11.1;5.1 Optical Properties of Quantum Steps;172
11.2;5.2 Determination of Activation Energy in Quantum Wells;178
11.3;5.3 Summary;182
12;Chapter 6 Semiconductor Atomic Superlattice (SAS);184
12.1;6.1 Silicon-Based Quantum Wells;185
12.2;6.2 Si-Interface Adsorbed Gas (IAG) Superlattice;186
12.3;6.3 Amorphous Silicon/Silicon Oxide Superlattice;189
12.4;6.4 Silicon–Oxygen (Si–O) Superlattice;190
12.5;6.5 Estimate of the Band-Edge Alignment Using Atomic States;195
12.6;6.6 Estimate of the Band-Edge Alignment with HOMO–LUMO;196
12.7;6.7 Estimation of Strain from a Ball-and-Stick Model;198
12.8;6.8 Electroluminescence and Photoluminescence;209
12.9;6.9 Transport through a Si–O Superlattice;214
12.10;6.10 A Si–O Superlattice and Other Si/Ge, Si/Co, Si/C Monolayer Superlattice;216
12.11;6.11 Summary;219
13;Chapter 7 Si Quantum Dots;222
13.1;7.1 Energy States of Silicon Quantum Dots;222
13.2;7.2 Resonant Tunneling in Silicon Quantum Dots;229
13.3;7.3 Slow Oscillations and Hysteresis;235
13.4;7.4 Avalanche Multiplication from Resonant Tunneling;243
13.5;7.5 Influence of Light and Repeatability under Multiple Scans;247
13.6;7.6 Many Body Effects in Coupled Quantum Dots;249
13.7;7.7 Summary;251
14;Chapter 8 Capacitance, Dielectric Constant, and Doping Quantum Dots;254
14.1;8.1 Capacitance of Silicon Quantum Dots;254
14.2;8.2 Dielectric Constant of a Silicon Quantum Dot;263
14.3;8.3 Doping a Silicon Quantum Dot;272
14.4;8.4 Capacitance: Spatial Symmetry of Discrete Charge Dielectric;277
14.5;8.5 Summary;281
15;Chapter 9 Porous Silicon;286
15.1;9.1 Porous Silicon: Light-Emitting Silicon;286
15.2;9.2 PSi: Other Applications;291
15.3;9.3 Summary;293
16;Chapter 10 Some Novel Devices;296
16.1;10.1 Field Emission with Quantum Well and Nanometer Thick Multilayer Structured Cathode;296
16.2;10.2 Saturation Intensity of PbS QDs;301
16.3;10.3 Multipole Electrode Heterojunction Hybrid Structures;305
16.4;10.4 Some Fundamental Issues: Mainly Difficulties;309
16.5;10.5 Comments on Quantum Computing;311
16.6;10.6 Recent Activities in Superlattice;312
16.7;10.7 Graphene Adventure;315
16.8;10.8 Summary;318
17;Chapter 11 Quantum Impedance of Electrons;324
17.1;11.1 Landauer Conductance Formula;324
17.2;11.2 Electron Quantum Waveguide;325
17.3;11.3 Wave Impedance of Electrons;329
17.4;11.4 Summary;338
18;Chapter 12 Why Super and Why Nano?;340
18.1;12.1 Finite Solid, Giant Molecule, and Composite;340
18.2;12.2 Generalization of Superlattices into Components;340
18.3;12.3 QDs as Individual Components;342
18.4;12.4 Size Requirements;342
18.5;12.5 Superlattice and the World of Nano;343
18.6;12.6 Some New Opportunities;344
18.7;12.7 A Word of Caution;345