E-Book, Englisch, 506 Seiten, Web PDF
Tu / Rosenberg Analytical Techniques for Thin Films
1. Auflage 2013
ISBN: 978-1-4832-1831-1
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Treatise on Materials Science and Technology, Vol. 27
E-Book, Englisch, 506 Seiten, Web PDF
ISBN: 978-1-4832-1831-1
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Treatise on Materials Science and Technology, Volume 27: Analytical Techniques for Thin Films covers a set of analytical techniques developed for thin films and interfaces, all based on scattering and excitation phenomena and theories. The book discusses photon beam and X-ray techniques; electron beam techniques; and ion beam techniques. Materials scientists, materials engineers, chemical engineers, and physicists will find the book invaluable.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;Treatise on Materials Science and Technology;4
3;Copyright Page;5
4;Table of Contents;6
5;Contributors;10
6;Preface;12
7;Part I: Introduction;14
7.1;Chapter 1. Submicron Structure and Microanalysis;16
7.1.1;I. Introduction;16
7.1.2;II. Submicron Structure;17
7.1.3;III. Microanalysis;18
7.1.4;IV. Chapter Synopses;20
8;Part II: Photon Beam and X-Ray Techniques;26
8.1;Chapter 2. Synchrotron Radiation Photoemission Studies of Interfaces;28
8.1.1;I. Statement of Purpose;28
8.1.2;II. Introduction;29
8.1.3;III. Synchrotron Radiation Photoemission;33
8.1.4;IV. Case Studies;41
8.1.5;V. Concluding Remarks;70
8.1.6;Acknowledgements;71
8.2;Chapter 3. ESCA;78
8.2.1;I. Introduction;78
8.2.2;II. Instrumentation and Experimental Considerations;84
8.2.3;III. Surface Sensitivity;88
8.2.4;IV. Quantitative Analysis;92
8.2.5;V. Depth Profiling;95
8.2.6;VI. Chemical Shifts and Solid State Screening;97
8.2.7;VII. Surface and Interface Segregation;105
8.2.8;VIII. Line Widths and Line Shapes;109
8.2.9;IX. Auger Spectra;112
8.2.10;X. Valence Electron Spectra;113
8.2.11;Summary;119
8.2.12;References;120
8.3;Chapter 4. Modern Developments in Soft X-Ray Imaging;124
8.3.1;I. Introduction;124
8.3.2;II. Soft X-Ray Sources;125
8.3.3;III. Resolution;136
8.3.4;IV. Potential Applications in Materials Science;151
8.3.5;References;152
8.4;Chapter 5. X-Ray Diffraction Analysis of Strains and Stresses in Thin Films;156
8.4.1;I. Introduction;156
8.4.2;II. Strain–Stress Relations;157
8.4.3;III. X-Ray Diffraction Techniques;177
8.4.4;IV. Summary;206
8.4.5;Acknowledgments;207
8.4.6;Appendix;207
8.4.7;References;210
8.5;Chapter 6. X-Ray Diffraction Analysis of Diffusion in Thin Films;214
8.5.1;I. Introduction;214
8.5.2;II. Diffusion Equations;216
8.5.3;III. X-Ray Diffraction Analysis;222
8.5.4;IV. Summary;258
8.5.5;References;260
9;Part III: Electron Beam Techniques;262
9.1;Chapter 7. Cross-Sectional Transmission Electron Microscopy of Electronic and Photonic Devices;264
9.1.1;Introduction;265
9.1.2;I. Epoxy-Embedding Technique;267
9.1.3;II. TEM Cross-Section Sample Preparation Technique for III–V Compound Semiconductor Device Materials by Chemical Thinning;276
9.1.4;III. Pre–ion-Milling Etch and Pre–ion-Milling Drill Techniques;285
9.1.5;IV. Glass Sealing Cross-Section TEM Sample Preparation;290
9.1.6;V. Feature Enhancement;295
9.1.7;VI. TEM Test Pattern;302
9.1.8;VII. Future Trends and Summary;305
9.1.9;References;308
9.2;Chapter 8. High-Resolution Transmission Electron Microscopy of Surfaces and Interfaces;310
9.2.1;I. Introduction;310
9.2.2;II. Lattice Imaging;311
9.2.3;III. Diffraction Contrast Techniques;329
9.2.4;IV. Surfaces;335
9.2.5;V. Current Developments;342
9.2.6;References;345
9.3;Chapter 9. Scanning Transmission Electron Microscopy;350
9.3.1;I. Introduction;350
9.3.2;II. STEM Electron Optics;352
9.3.3;III. Common Analytical Techniques;362
9.3.4;IV. Energy-Filtered Imaging;374
9.3.5;V. High-Resolution Energy-Loss Studies;377
9.3.6;VI. Property-Dependent Techniques;389
9.3.7;VII. Computer Interaction with the STEM;395
9.3.8;VIII. Conclusions;396
9.3.9;References;397
10;Part IV: Ion Beam Techniques;402
10.1;Chapter 10. Rutherford Backscattering Spectrometry on Thin Solid Films;404
10.1.1;I. Introduction;405
10.1.2;II. Basic Concepts of Rutherford Backscattering Spectrometry;409
10.1.3;III. Elemental Composition and Depth Profiling: Applications and Examples;414
10.1.4;IV. Microbeam Applications;428
10.1.5;V. Concepts of Channeling;429
10.1.6;VI. Epitaxial Thin-Film Applications;433
10.1.7;VII. Superlattices;445
10.1.8;VIII. Surface-Structure Studies;452
10.1.9;References;457
10.2;Chapter 11. The Atomic Structure and Atomic Layer Compositional Analysis of Thin Solid Films Using the Time-of-Flight Atom-Probe Field Ion Microscopy;462
10.2.1;I. Introduction;463
10.2.2;II. Method of Absolute Composition Depth Profiling in the Atom-probe;464
10.2.3;III. Instrumentation;468
10.2.4;IV. Applications to Surface-Layer Analysis;478
10.2.5;V. Concluding Remarks;490
10.2.6;References;490
11;Index;492
12;Contents of Previous Volumes;498




